Kioxia Corporation

Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Teppei Higashitsuji

Toshifumi Minami

Atsuhiro Sato

Yasuyuki Baba

Keisuke Yonehama

Hiroshi Shinohara

Hideyuki Kamata

Hiroyuki Takenaka

Kiyofumi Sakurai

Akihiko Chiba

Youichi Magome

Hiroaki Nakasa

Toshifumi Watanabe

A semiconductor memory includes a memory cell, a bit line electrically connected to the memory cell, a sense amplifier including a first latch circuit, a first hookup circuit, a second latch circuit, a first wiring, and a first pre-charge circuit. The sense amplifier is in a first circuit area. The first hookup circuit is in a second circuit area and configured to control connection between the bit line and the sense amplifier. The first wiring is connected between the first latch circuit and the second latch circuit. The first pre-charge circuit includes a first transistor in a third circuit area between the first circuit area and the second circuit area. The first transistor has a first end connected to the first wiring at a first position in the third circuit area and a second end connectable to a terminal supplied with one of a pre-charge voltage and a ground voltage.

Semiconductor memory

A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars and extends in the same direction as the pillars. A surface of the plate, which faces the pillars, has convex portions and non-convex portions.

Semiconductor memory device

A semiconductor storage device includes a first semiconductor substrate, a second semiconductor substrate, a first memory cell and a second memory cell provided between the first semiconductor substrate and the second semiconductor substrate, a first word line electrically connected to the first memory cell, a second word line electrically connected to the second memory cell, a first transistor that is provided on the first semiconductor substrate and electrically connected between the first word line and a first wiring through which a voltage is applied to the first word line, and a second transistor that is provided on the semiconductor substrate and electrically connected between the second word line and a second wiring through which a voltage is applied to the second word line.

Semiconductor storage device

A semiconductor memory device includes first and second memory cell transistors, first and second word lines electrically connected to the first and second memory cell transistors, respectively, first and second transfer transistors. The first and second transistors are electrically connected to the first and second word lines, respectively. The sizes of the first transistor and the second transistor are different.

A semiconductor device includes a gate insulation film provided on a semiconductor substrate, a gate electrode provided on the gate insulation film, a pair of first diffusion layers, a pair of second diffusion layers which are provided in the semiconductor substrate in such a manner that the gate electrode is interposed between the second diffusion layers, the second diffusion layers have a lower impurity concentration than the first diffusion layers, contact wiring lines provided on the first diffusion layers, respectively, and a first insulation layer which is an insulation layer formed in at least one of the second diffusion layers between the gate electrode and the contact wiring lines, the first insulation layer having a greater depth in the semiconductor substrate than the first diffusion layer and a less depth than the second diffusion layer.

Semiconductor device and method of fabricating the same

Growing community of inventors

Fujisawa Kanagawa, Japan

Teppei Higashitsuji