International Business Machines Corporation

Teodor Krassimirov Todorov

Talia S Gershon

Devendra K Sadana

Ning Li

Yun Seog Lee

Douglas M Bishop

Saurabh Singh

Richard Alan Haight

David Brian Mitzi

Supratik Guha

John Rozen

John C Collins

Oki Gunawan

Kevin W Brew

Priscilla D Antunez

Ali Afzali-Ardakani

Jeehwan Kim

Theodore Gerard Van Kessel

Joel Pereira De Souza

James Bowler Hannon

Jianshi Tang

Sunit S Mahajan

Seyoung Kim

Dennis Merton Newns

Byungha Shin

Mark T Winkler

Takashi Ando

Stephen W Bedell

Martin Michael Frank

Nestor Alexander Bojarczuk, Jr

Bruce A Ek

Ravin Mankad

Mahadevaiyer Krishnan

David Aaron Randolph Barkhouse

John Albert Olenick

John M Papalia

Santanu Bag

Adele L Pacquette

Charles Sturdevant

Steven J Holmes

Guy M Cohen

Vijay Narayanan

Christian Lavoie

Paul Stephen Andry

Bucknell Chapman Webb

Nicholas Anthony Lanzillo

Nathan P Marchack

Glenn John Martyna

Kejia Wang

Ching-Tzu Chen

Utkarsh Bajpai

Peter Kerns

Singh Saurabh

An interconnect structure including conducting layers of topological semi-metals and/or topological insulators. To increase charge carrier density in the conducting layers, a charge carrier doping layer present on at least one surface of the one or more conductive layers of topological semi-metals. The charge carrying doping layers have a charge carrier density greater than the topological semi-metals and/or topological insulators of the one or more conductive layers.

Multi-layer topological interconnect with proximal doping layer

Techniques for mechanically stabilizing metallic nanowire meshes using encapsulation are provided. In one aspect, a method for forming a mechanically-stabilized metallic nanowire mesh is provided which includes the steps of: forming the metallic nanowire mesh on a substrate; and coating the metallic nanowire mesh with a metal oxide that encapsulates the metallic nanowire mesh to mechanically-stabilize the metallic nanowire mesh which permits the metallic nanowire mesh to remain conductive at temperatures greater than or equal to about 600° C. A mechanically-stabilized metallic nanowire mesh is also provided.

Stabilization of metallic nanowire meshes via encapsulation

Making a rechargeable Lithium energy storage device begins by forming one or more trenches in a solid silicon substrate. One or more region interface precursors are deposited in the trench followed by one or more anode materials, one or more solid polymer electrolytes (SPE), and one or more cathode materials. Electrically cycling transforms the battery structures prior to full operation of the battery. Some, or all, of the process steps can be performed while the materials are within the trench, i.e. in-situ.

Method of making a lithium energy storage device

A method of fabricating a synaptic device is provided. The method includes forming a channel layer between a first terminal and a second terminal. The channel layer varies in resistance based on a magnesium concentration in the channel layer. The method further includes forming an electrolyte layer. The electrolyte layer includes a magnesium ion conductive material. A third terminal is formed over the electrolyte layer and applies a signal to the electrolyte layer and the channel layer.

Magnesium ion based synaptic device

A semiconductor device structure and method for forming the same is disclosed. The structure incudes a silicon substrate having at least one trench disposed therein. An electrical and ionic insulating layer is disposed over at least a top surface of the substrate. A plurality of energy storage device layers is formed within the one trench. The plurality of layers includes at least a cathode-based active electrode having a thickness of, for example, at least 100 nm and an internal resistance of, for example, less than 50 Ohms/cm. The method includes forming at least one trench in a silicon substrate. An electrical and ionic insulating layer(s) is formed and disposed over at least a top surface of the silicon substrate. A plurality of energy storage device layers is formed within the trench. Each layer of the plurality of energy storage device layers is independently processed and integrated into the trench.

Fabrication of all-solid-state energy storage devices

A composition includes an electrode made of Lithium Manganese Oxyfluoride (LMOF). A single layer separator adheres to a surface of the electrode, is a dielectric that is conductive for Lithium ions but not electrons, and has top and bottom sides. A solid polymer electrolyte (SPE) saturates the electrode so that the LMOF is between 55 percent and 85 percent by mass of a composition of the LMOF electrode and the SPE is between 7.5 percent and 20 percent by mass of the composition of the LMOF electrode. The SPE saturates the separator so that the SPE resides both on the separator top and bottom sides so that the SPE residing on the separator top side contacts the surface. The LMOF exhibits X-Ray Diffraction spectrum peaks between twenty-two and twenty-four 2-theta degrees, between forty-eight and fifty 2-theta degrees, between fifty-four and fifty-six 2-theta degrees, and between fifty-six and fifty-eight 2-theta degrees.

3D textured composite silicon anode and fluorinated lithium compound electrochemical cell

Methods of forming variable-resistance devices include forming a variable-resistance layer between a first terminal and a second terminal from a material that varies in resistance based on an oxygen concentration. An electrolyte layer is formed over the variable-resistance layer from a material that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. A conductive gate layer is formed over the electrolyte layer.

Three-terminal oxygen intercalation neuromorphic devices

A silicon-based electrode forms an interface with a layer pair being: 1. a thin, semi-dielectric layer made of a lithium (Li) compound, e.g. lithium fluoride, LiF, disposed on and adheres to the electrode surface of the silicon-based electrode and 2. an molten-ion conductive layer of a lithium containing salt (lithium salt layer) disposed on the semi-dielectric layer. One or more device layers can be disposed on the layer pair to make devices such as energy storage devices, like batteries. The interface has a low resistivity that reduces the energy losses and generated heat of the devices.

Low resistance composite silicon-based electrode

A method of fabricating a neuromorphic device includes forming a variable-resistance layer between a first terminal and a second terminal, the variable-resistance layer varies in resistance based on an oxygen concentration in the variable-resistance layer. The method further includes forming an electrolyte layer over the variable-resistance layer that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. The method further includes forming a gate layer over the electrolyte layer to apply a voltage on the electrolyte layer and the variable-resistance layer, the gate layer formed using an oxygen scavenging material.

Neuromorphic device with oxygen scavenging gate

Semitransparent chalcogen solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a first transparent contact on a substrate; depositing an n-type layer on the first transparent contact; depositing a p-type chalcogen absorber layer on the n-type layer, wherein a p-n junction is formed between the p-type chalcogen absorber layer and the n-type layer; depositing a protective interlayer onto the p-type chalcogen absorber layer, wherein the protective interlayer fully covers the p-type chalcogen absorber layer; and forming a second transparent contact on the interlayer, wherein the interlayer being disposed between the p-type chalcogen absorber layer and the second transparent contact serves to protect the p-n junction during the forming of the second transparent contact. Solar cells and other methods for formation thereof are also provided.

Semitransparent chalcogen solar cell

A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu&#x2014;Zn&#x2014;Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

Atomic layer deposition for photovoltaic devices

A neuromorphic semiconductor device includes a copper-based intercalation channel disposed on an insulative layer, a source contact and a drain contact of a substrate. A copper-based electrolyte layer is disposed on the copper-based intercalation channel and a copper-based gate electrode is disposed on the copper-based electrolyte layer.

Neuromorphic device driven by copper ion intercalation

Selenium-fullerene heterojunction solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a front contact on a substrate; depositing an n-type semiconducting layer on the front contact, wherein the n-type semiconducting layer comprises a fullerene or fullerene derivative; forming a p-type chalcogen absorber layer on the n-type semiconducting layer; depositing a high workfunction material onto the p-type chalcogen absorber layer, wherein the high workfunction material has a workfunction of greater than about 5.2 electron volts; and forming a back contact on the high workfunction material. Solar cells and other methods for formation thereof are also provided.

Selenium-fullerene heterojunction solar cell

A catholyte-like material including a cathode material and an interfacial additive layer for providing a lithium ion energy storage device having low impedance is disclosed. The interfacial additive layer, which is composed of vapor deposited iodine, is present between the cathode material and an electrolyte layer of the device. The presence of such an interfacial additive layer increases the ion and electron mobile dependent performances at the cathode material interface due to significant decrease in the resistance/impedance that is observed at the respective interface as well as the impedance observed in the bulk of the device. The catholyte-like material of the present application can be used to provide a lithium ion energy storage device having high charge/discharge rates and/or high capacity.

Lithium ion energy storage device containing a vapor deposited iodine interfacial layer

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Yorktown Heights, NY, United States of America

Teodor Krassimirov Todorov