Average Co-Inventor Count = 3.70
ph-index = 22
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. International Business Machines Corporation (492 from 163,671 patents)
2. Globalfoundries Inc. (118 from 5,671 patents)
3. Adeia Semiconductor Bonding Technologies Inc. (5 from 1,847 patents)
4. Commissariat a L'energie Atomique Et Aux Energies Alternatives (4 from 3,480 patents)
5. Renesas Electronics Corporation (3 from 7,504 patents)
6. Elpis Technologies Inc. (3 from 51 patents)
7. Stmicroelectronics Gmbh (2 from 2,864 patents)
8. State University of New York (2 from 1,970 patents)
9. Samsung Electronics Co., Ltd. (1 from 129,810 patents)
10. Kabushiki Kaisha Toshiba (1 from 52,582 patents)
11. Adeia Semiconductor Solutions LLC (1 from 17 patents)
12. Tessera LLC (1 from 9 patents)
550 patents:
1. 12432911 - Read-only memory for chip security that is MOSFET process compatible
2. 12364004 - Dummy fin contact in vertically stacked transistors
3. 12349445 - Vertically integrated semiconductor device
4. 12310009 - Read-only memory with vertical transistors
5. 12224203 - Air gap spacer formation for nano-scale semiconductor devices
6. 12142599 - Stacked transistor structure with reflection layer
7. 12119393 - Punch through stopper in bulk finFET device
8. 12033061 - Capacitor-based synapse network structure with metal shielding between outputs
9. 12015069 - Gate-all-around field effect transistor having multiple threshold voltages
10. 11894303 - Circuit wiring techniques for stacked transistor structures
11. 11847398 - Automatic generation of ground rule verification macros
12. 11769796 - Hybrid complementary metal-oxide semiconductor field effect transistor nanosheet device
13. 11764259 - Vertical field-effect transistor with dielectric fin extension
14. 11756957 - Reducing gate resistance in stacked vertical transport field effect transistors
15. 11757012 - Source and drain contact cut last process to enable wrap-around-contact