Yangtze Memory Technologies Co., Ltd.

Teng Zhou

Hua Tan

Xiaodong Xu

Qian Sun

Dili Wang

Xuqing Jia

Wen Luo

Yuzhe Chi

A memory system, an operation method thereof and a readable storage medium are provided according to examples of this disclosure. The memory system including: a memory device including a plurality of memory blocks, each of which including a plurality of word lines and a plurality of memory cells coupled to the plurality of word lines; a memory controller coupled to the memory device and configured to: acquire a read retry voltage with both a first-type read retry table and a second-type read retry table; control the memory device to perform a read retry operation with the read retry voltage.

Memory system and operation method thereof, and readable storage medium

In examples, a method of controlling a memory system comprises obtaining a first soft-bit data corresponding to a hard-bit data read from a memory and a first lookup table, where the first lookup table comprises a first log-likelihood ratio determined based on a first reference read voltage of the memory. The method comprises performing a first soft decoding operation according to the first log-likelihood ratio and the first soft-bit data. The method comprises performing at least one shift to the first log-likelihood ratio and performing a second soft decoding operation according to a log-likelihood ratio after each shift and the first soft-bit data when the first soft decoding operation is determined to have failed to decode.

Method for controlling a memory system, a memory system, and an electronic device

Examples provide for error correction. The error correction includes: obtaining first soft data according to first hard read data and cached second hard read data after hard decision decoding for the first hard read data fails, wherein the first hard read data is read according to a first hard read voltage, and the second hard read data is read according to a second hard read voltage before reading the first hard read data; and performing first soft decision decoding according to the first soft data and the first hard read data, or according to the first soft data and the second hard read data, wherein the first hard read voltage is one of a plurality of re-read voltages corresponding to a read command; and the second hard read voltage is an initial read voltage or a re-read voltage of the plurality of re-read voltages except the first hard read voltage.

Error correction method, memory system and memory controller

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Wuhan, China

Teng Zhou