Globalfoundries U.S. Inc.

Teng-Yin Lin

Tung-Hsing Lee

Frank Wilhelm Mont

Man Gu

Won Suk Lee

Alexander Lee Martin

Halting Wang

Wang Zheng

Anvitha Shampur

Edward J Gordon

Asmaa Elkadi

The present disclosure relates to semiconductor structures and, more particularly, to dummy fill structures and methods of manufacture. The structure includes: a passive device formed in interlevel dielectric material; and a plurality of metal dummy fill structures composed of at least one main branch and two extending legs from at least one side of the main branch, the at least two extending legs being positioned and structured to suppress eddy currents of the passive device.

Dummy fill structures

Structures including a passive device and methods of forming such structures. Multiple fins are positioned on a substrate, and an interconnect structure is positioned over the substrate. The fins contain a polycrystalline semiconductor material, and the interconnect structure includes a passive device that is positioned over the fins. The passive device may be, for example, an inductor or a transmission line.

Passive devices over polycrystalline semiconductor fins

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Clifton Park, NY, United States of America

Teng-Yin Lin