Boe Technology Group Co., Ltd.

Institute of Radiation Medicine, China Academy of Military Medical Sciences Pla

Institute of Radiation Medicine, Academy of Military Medical Sciences, People's Liberation Army of China

Teng Luo

Shi Shu

Chuanxiang Xu

Feng Gu

Wei Li

Bin Zhang

Jing Liu

Lin Wang

Tao Peng

Lu Yan Li

Xiaoming Yang

Shouguo Zhang

Changyan Li

Yiqun Zhan

Haiyan Yan

Xiaoxue Wen

The present disclosure provides a counter substrate, a display panel, a display device, and fabricating method, further simplifying the fabricating process of the display panel by reducing the number of masking times required during the making of a spacer pattern and a frame light shielding pattern while achieving the frame light shielding function of the counter substrate and getting the counter substrate conductive with an array substrate. The fabricating method of the counter substrate comprises: forming a transparent electrode layer on a first base substrate; forming a black spacer pattern and a frame light shielding pattern at the same time on the transparent electrode layer, wherein the frame light shielding pattern comprises a first via hole that exposes a portion of the transparent electrode layer; and forming a conductive light shielding layer pattern in the first via hole.

Counter substrate, display panel, display device and fabricating method

A method for fabricating a thin film transistor includes providing a substrate (); forming a semiconductor layer () over the substrate (); forming a source-drain metal layer () over the semiconductor layer (); applying one patterning process to the semiconductor layer () and the source-drain metal layer () to form an active layer (), a source electrode (), and a drain electrode (); forming a gate insulating layer () and an interlayer insulating layer () that cover the active layer (), the source electrode (), and the drain electrode (); applying a patterning process to the interlayer insulating layer () to form a first window () in the interlayer insulating layer () to expose a portion of the gate insulating layer (); and forming a gate electrode () in the first window (). An orthogonal projection of the gate electrode () on the substrate () is in an orthogonal projection of the active layer () on the substrate ().

Thin film transistor and display substrate, fabrication method thereof, and display device

Disclosed in the present disclosure are substances having tyrosine kinase inhibitory activity and a preparation method and use thereof, wherein the substances are the compounds having the structure of general formula (I) or the geometric isomers or pharmaceutical salts thereof. Through evaluation on tyrosine kinase inhibitory activity and related experiments, the present disclosure demonstrates that these compounds have a good tyrosine kinase inhibitory activity, and may inhibit a variety of tumor cells, and thus may be developed into drugs for preventing and treating tumor diseases, especially liver cancer, lung cancer and neuroblastoma.

Substance having tyrosine kinase inhibitory activity and preparation method and use thereof

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Beijing, China

Teng Luo