Applied Materials, Inc.

Lam Research Corporation

Teh-Tien Su

Michal Danek

Ashok K Sinha

Samantha SiamHwa Tan

Anand Chandrashekar

Keren Jacobs Kanarik

Gerardo Delgadino

Wenbing Yang

Chiukin Steven Lai

Michael J Wood

Indrajit Lahiri

Sy-Yuan Brian Shieh

Brian Sy-Yuan Sheih

Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

Atomic layer etch of tungsten for enhanced tungsten deposition fill

Atomic layer etching of tungsten for enhanced tungsten deposition fill

A substrate is processed in a process chamber comprising a substrate support having a receiving surface for receiving a substrate so that a front surface of the substrate is exposed within the chamber. An energized process gas is used to process the front surface of the substrate. A peripheral edge of the backside surface of the substrate is cleaned by raising the substrate above the receiving surface of the substrate support to a raised position, and exposing the backside surface of the substrate to an energized cleaning gas.

Removal of process residues on the backside of a substrate

A plasma etch process for etching a porous carbon-doped silicon oxide dielectric layer using a photoresist mask is carried out first in an etch reactor by performing a fluoro-carbon based etch process on the workpiece to etch exposed portions of the dielectric layer while depositing protective fluoro-carbon polymer on the photoresist mask. Then, in an ashing reactor, polymer and photoresist are removed by heating the workpiece to over 100 degrees C., exposing a peripheral portion of the backside of said workpiece, and providing products from a plasma of a hydrogen process gas to reduce carbon contained in polymer and photoresist on said workpiece until the polymer has been removed from a backside of said workpiece. The process gas preferably contains both hydrogen gas and water vapor, although the primary constituent is hydrogen gas. The wafer (workpiece) backside may be exposed by extending the wafer lift pins.

Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material

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Milpitas, CA, United States of America

Teh-Tien Su