Sumco Corporation

Tegi Kim

Takashi Yokoyama

Kazuyoshi Takahashi

Satoshi Kudo

Ryusuke Yokoyama

Kazumi Tanabe

Shuhei Matsuda

Kouzou Nakamura

Keiichiro Hiraki

Shin Matsukuma

Toshiyuki Muranaka

Toshinori Seki

A method of estimating an oxygen concentration in monocrystalline silicon, which is pulled up by a pull-up device having a hot zone with a plane-asymmetric arrangement with respect to a plane defined by a crystal pull-up shaft and an application direction of a horizontal magnetic field, includes, in at least one of a neck-formation step or a shoulder-formation step for the monocrystalline silicon: a step of measuring a surface temperature of a silicon melt at a point defining a plane-asymmetric arrangement of a hot zone, and a step of estimating the oxygen concentration in a straight body of the pulled-up monocrystalline silicon based on the measured surface temperature of the silicon melt and a predetermined relationship between the surface temperature of the silicon melt and the oxygen concentration in the monocrystalline silicon.

Method of estimating oxygen concentration of silicon single crystal and method of manufacturing silicon single crystal

A manufacturing method of monocrystalline silicon includes: melting silicon housed in a quartz crucible into a silicon melt by heating the quartz crucible with a heating unit; dipping a seed crystal into the silicon melt in the quartz crucible to bring the seed crystal into contact with the silicon melt; and pulling up the seed crystal to grow monocrystalline silicon. In the pulling-up, a formation of a straight body of the monocrystalline silicon is started at a power consumption of the heating unit being equal to or more than 10000 kWh to grow an entirety of the monocrystalline silicon.

Method for producing silicon single crystal

A manufacturing method of this invention includes: a step of slicing a silicon single crystal containing boron as an acceptor and obtaining a non-heat-treated silicon wafer, a step of determining a boron concentration with respect to the non-heat-treated silicon wafer, and a step of determining an oxygen donor concentration with respect to the non-heat-treated silicon wafer, in which a determination as to whether or not to perform a heat treatment at a temperature of 300&#xb0; C. or more on the non-heat-treated silicon wafer is made based on a boron concentration determined in the step of determining a boron concentration, and an oxygen donor concentration determined in the step of determining an oxygen donor concentration. By this means, a wafer in which unevenly distributed LPDs that are present on the wafer are reduced is obtained.

Silicon wafer and method for manufacturing same

There is provided a silicon single crystal producing method in producing a silicon single crystal by the Czochralski method using a pulling apparatus including a heat shield, wherein an oxygen concentration in the crystal is controlled through the adjustment of a flow velocity of inert gas introduced into the apparatus at the gap portion between an exterior surface of the single crystal and a lower-end opening edge of the heat shield, in accordance with a gap-to-crystal-diameter ratio ('the area of the gap portion'/'the area of a cross-sectional of the single crystal'). By this producing method, it is possible to appropriately control the oxygen concentration in the pulled single crystal.

Silicon single crystal producing method

Growing community of inventors

Tokyo, Japan

Tegi Kim