Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

University of Toronto

Fox-tek, Inc.

Ted Sargent

Eun Joo Jang

Kwanghee Kim

Seungjin Lee

Geoff Darling

A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.

Quantum dot device, film having multilayered structure, and electronic device

An optical amplifier has two amplifying sections formed in a semiconductor structure. The two amplifying sections have different ratios of gain for two polarization states (e.g., TE and TM). Thus the amplifier as a whole has a gain ratio determined by the gains of the two amplifying sections. The two amplifying sections are separately electronically controllable so as to control the gains of the two amplifying sections and thus the gain ratio of the amplifier as a whole. Such an amplifier can be made by quantum well intermixing.

Semiconductor optical amplifier with electronically controllable polarization dependent gain

Growing community of inventors

Toronto, Canada

Ted Sargent