Etron Technology, Inc.

Te-Yi Yu

Shih-Hsing Wang

Shi-Huei Liu

Ming-Hong Kuo

Lien-Sheng Yang

Tzu-Hao Chen

Min-Chih Chang

By inputting voltages to global word lines of a memory, and by detecting currents of corresponding global word lines, a relation function between the currents and the voltages can be generated, and connection defects on the global word lines can be determined according to various types of deviation of a relation curve corresponding to the relation function between the currents and voltages.

Method of detecting connection defects of memory and memory capable of detecting connection defects thereof

Activate one active word line of two active word lines formed between two isolation word lines to a logic-high voltage, and float another active word line of the two active word lines. Then activate a plurality of first memory cells corresponding to the active word line having the logic-high voltage to a logic '1' voltage, and write a logic '0' voltage to a plurality of second memory cells corresponding to the floating active word line. Then write the logic &#x201c;1&#x201d; voltage to a plurality of bit lines. Then, suspend for charge sharing for a third predetermined time. Finally, read a voltage of the floating active word line to check if any leakage path exists between the floating active word line and the active word line having the logic-high voltage.

Memory device capable of operation in a burn in stress mode, method for performing burn in stress on a memory device, and method for detecting leakage current of a memory device

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Taipei, Taiwan

Te-Yi Yu