Silicon Motion, Inc.

Te-Wei Chen

Hsiu-Yuan Chen

Hung-Sheng Chang

Shu-Ying Huang

Yi-Hung Chien

Hung-Sen Kuo

Bing-Ling Wu

Ming-Wan Kuan

Chun-Ying Wang

A method forming a semiconductor package device includes: providing a substrate; forming a flip chip die on a first side on the substrate; and forming a molding compound on the first side of the substrate. The molding compound covers the flip chip die. The method further includes forming a heat sink on the molding compound; and forming a taping layer on a second side of the substrate, wherein the second side is opposite from the first side in a vertical direction. After forming the taping layer, the method further includes performing a pre-cut process and an etching process on the heat sink; and removing the taping layer.

Method forming a semiconductor package device

A circuit test method for a test device to test a device under test is provided. The circuit test method includes the steps of applying zero volts to a plurality of power pins of the device under test; applying a test voltage to a first signal pin among a plurality of signal pins of the device under test; and measuring a current on a second signal pin among the plurality of signal pins of the device under test and determining whether there is a leakage current in the device under test.

Test methods for packaged integrated circuits

The present invention provides a printed circuit board fabricated by a Non-Plating Process that includes at least one plating bar disposed around at least one package unit of the printed circuit board. The package unit includes at least one ground line, at least one power line and a plurality of signal lines. The ground line has a first contact pad exposed on a surface of the printed circuit board, and at least one of the ground lines is connected to the plating bar. The power line has a second contact pad exposed on the surface, and at least one of the power lines is connected to the neighboring plating bar. The signal line has a third contact pad exposed on the surface.

Printed circuit board and method of fabricating an element

The present invention provides an ESD protection circuit including a discharge transistor, a first switch, a second switch, a third switch and a fourth switch. The discharge transistor forms a discharge path between a first voltage terminal and a second voltage terminal. The first switch selectively provides voltage at the first voltage terminal to a control terminal of the discharge transistor. The second switch selectively provides voltage at the second voltage terminal to the control terminal of the discharge transistor. The third switch selectively provides voltage at the first voltage terminal to a substrate of the discharge transistor. The fourth switch selectively provides voltage at second voltage terminal to the substrate of the discharge transistor.

ESD protection circuit and ESD protection method thereof

A semiconductor device and an inductor are provided. The semiconductor device includes a top level interconnect metal layer (M) pattern. A below-to-top level interconnect metal layer (M) pattern is disposed directly below the top level interconnect metal layer pattern. A first via plug pattern is vertically disposed between the top level interconnect metal layer pattern and the below-to-top level interconnect metal layer pattern, electrically connected to the top level interconnect metal layer pattern and the below-to-top level interconnect metal layer pattern. The top level interconnect metal layer pattern, the below-to-top level interconnect metal layer pattern and the first via plug pattern have profiles parallel with each other from a top view.

Semiconductor device and inductor

The invention provides an electrostatic discharge (ESD) protection device having an ESD path between a first circuit and a second circuit. The electrostatic discharge protection device includes a first doped region having a first conductive type. A first well has a second conductive type opposite to the first conductive type. A second doped region and a third doped region are in the first well, respectively having the first and second conductive types. The first doped region is coupled to a power supply terminal or a ground terminal of the first circuit, and the second and third doped regions are both coupled to a power supply terminal or a ground terminal of the second circuit, respectively.

Electrostatic discharge protection device

An I/O regulating circuitry is provided. The I/O regulating circuitry omits the ESD device in a CMOS process with a minimized critical dimension to reduce chip size while still maintaining electrostatic discharge immunity. The I/O regulating circuitry is applied in MLC flash memory applications and the flash controller thereof.

Input/Output regulating circuitry with self-electrostatic-discharge protection

A non-volatile memory array structure includes N bit lines, M first word lines, M&#xd7;N first memory cells, a second word line, n repair circuits and a sense amplifier. The N bit lines and M first word lines are interlaced to control the M&#xd7;N first memory cell. The second word line is placed across the n bit lines. Each of the repair circuits is electrically connected between the corresponding bit line and the sense amplifier. M and N are natural number.

Non-volatile memory structure

A resistance compensation circuit and a method thereof for tuning frequency, includes several resistors serially connected to one another, several transistors, each of which connects across one of the corresponding resistances, and a register electrically connected to the gates of the transistors. A control signal controls the switching of the transistors either to compensate the process variation of the resistance through the register or to tune the working frequency of the Integrated circuit.

Resistance compensation circuit and method thereof

An electrostatic discharge (ESD) protection device for providing an ESD path between two circuitries is provided. Each circuitry has a power supply terminal and a ground terminal. The protection device comprises an equivalent MOS, a first terminal, and a second terminal. The equivalent MOS comprises a source, a drain and a gate, wherein the drain is connected to the gate. The first terminal is connected to the gate, while the second terminal is connected to the source. The first terminal is connected to one power supply terminal and ground terminal, whereas the second terminal is connected to the other the power supply terminal and ground terminal.

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Zhubei, Taiwan

Te-Wei Chen