Chunghwa Picture Tubes, Ltd.

Industrial Technology Research Institute

Au Optronics Corporation

Hannstar Display Corporation

Chi Mei Optoelectronics Corporation

Toppoly Optoelectronics Corporation

Quanta Display Inc.

Taiwan Tft Lcd Association

Te-Ming Chu

Cheng-Chung Chen

Yu-chi Lee

Chi-Shen Lee

Shuo-Wei Liang

Chai-Yuan Sheu

Chien-Wei Wu

Chia-Hsiang Chen

Yi-Hsun Huang

Yu-Chang Sun

Cheng-Hsing Chen

A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

Manufacturing method for a TFT electrode for preventing metal layer diffusion

In accordance with the present invention, a gate electrode structure with inclined planes is used as a mask when performing an ion implantation process. The inclined planes are used to define the lightly doped drain (LDD) region in the active area. Therefore, the width of the LDD can be defined by the geometry of the inclined planes.

Method for forming a lightly doped drain in a thin film transistor

The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

Structure of TFT electrode for preventing metal layer diffusion and manufacturing method therefor

Growing community of inventors

Taoyuan Hsien, Taiwan

Te-Ming Chu