Taiwan Semiconductor Manufacturing Comp. Ltd.

Te-hsin Chiu

Jiann-Tyng Tzeng

Shih-Wei Peng

Wei-Cheng Lin

Chia-Tien Wu

Wei-An Lai

An integrated circuit includes multiple backside conductive layers disposed over a backside of a substrate. The multiple backside conductive layers each includes conductive segments. The conductive segments in at least one of the backside conductive layers are configured to transmit one or more power signals. The conductive segments of the multiple backside conductive layers cover select areas of the backside of the substrate, thereby leaving other areas of the backside of the substrate exposed.

Backside conductive segments cover a first active region and define an opening above a second active region

A semiconductor device including vertical transistors with a back side power structure, and methods of making the same are described. In one example, a described semiconductor structure includes: a gate structure including a gate pad and a gate contact on the gate pad; a first source region disposed below the gate pad; a first drain region disposed on the gate pad, wherein the first source region, the first drain region and the gate structure form a first transistor; a second source region disposed below the gate pad; a second drain region disposed on the gate pad, wherein the second source region, the second drain region and the gate structure form a second transistor; and at least one metal line that is below the first source region and the second source region, and is electrically connected to at least one power supply.

Semiconductor device including vertical transistor with back side power structure

An integrated circuit includes a plurality of first layer deep lines, a plurality of first layer shallow lines, a plurality of second layer deep lines, and a plurality of second layer shallow lines. The integrated circuit also includes a first active device and a second active device coupled between a conducting path that has a low resistivity portion and a low capacitivity portion. The first active device has an output coupled to a first layer deep line that is in the low resistivity portion. The second active device has an input coupled to a first layer shallow line that is in the low capacitivity portion. The low resistivity portion excludes the first layer shallow lines and the second layer shallow lines, and the low capacitivity portion excludes the first layer deep lines and the second layer deep lines.

Deep lines and shallow lines in signal conducting paths

An integrated circuit includes a first power rail, a first signal line, a first transistor and a second transistor. The first power rail is on a back-side of a substrate and is configured to supply a first supply voltage. The first signal line is on the back-side of the substrate and is separated from the first power rail. The first transistor has a first active region is in a front-side of the substrate. The first active region is overlapped by the first power rail and is electrically coupled to the first power rail. The second transistor has a second active region that is in the front-side of the substrate. The second active region is separated from the first active region, is overlapped by the first signal line, and is configured to receive the first supply voltage of the first power rail through the first active region of the first transistor.

Integrated circuit, system and method of forming the same

A method of forming an integrated circuit (IC) package includes constructing a first power distribution structure on a first die included in the IC package, thereby electrically connecting the first power distribution structure to a second power distribution structure positioned on a back side of the first die, and bonding a third power distribution structure to the first power distribution structure, the third power distribution structure being positioned on a back side of a second die.

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HSINCHU, Taiwan

Te-hsin Chiu