Mcube, Inc.

Te-Hsi Terrence Lee

Sudheer S Sridharamurthy

Wenhua Zhang

Sanjay Bhandari

Shingo Yoneoka

Tony Maraldo

Zheng-Yao Sun

Joseph Rastegar

A structure for a MEMS device includes a MEMS layer comprising a mass portion and a spring portion, a substrate coupled to the MEMS layer, wherein the substrate comprises a planar region and an stopper region, wherein the MEMS device and the substrate are oriented in a plurality of relative orientations in response to an external force, wherein the spring portion and the stopper region are configured to disengagingly impact when the external force exceeds a first threshold force, wherein the mass portion and the planar region are configured to disengagingly impact when the external force exceeds a second threshold force, and wherein the second threshold force exceeds the first threshold force.

MEMS device with reduced dynamic stress and methods

A method for a MEMS device comprises determining in a computer system, a first driving signal for the MEMS device in response to a first time delay and to a base driving signal, applying the first driving signal to the MEMS device to induce the MEMS device to operate at a first frequency, determining a second driving signal for the MEMS device in response to a second time delay and to the base driving signal, applying the second driving signal to the MEMS device to induce the MEMS device to operate at a second frequency, determining a first quality factor associated with the MEMS device in response to the first frequency and the second frequency, determining a quality factor associated with the MEMS device in response to the first quality factor, and determining whether the quality factor associated with the MEMS device, exceeds a threshold quality factor.

Method to test the quality factor of a MEMS gyroscope at chip probe

A Synchronous Modulation Resonator (SMR) device, the device includes a resonator having coupled to a Vd source and a Vr source, wherein the Vd is DC biased, wherein the Vr is AC, wherein the resonator provides a resonator output in response to Vd and Vr, a Sigma Delta Modulator (SDM) coupled to the resonator and to the Vr source, wherein the SDM provides a signal output in response to the resonator output and to the Vr, and a digital output block coupled to the SDM, wherein the digital output block is configured to provide a digital signal representation of the resonator output, in response to the signal output.

Synchronous modulation resonator with sigma delta modulator

An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

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San Jose, CA, United States of America

Te-Hsi Terrence Lee