Asti Global Inc., Taiwan

Skiileux Electricity Inc.

Skilleux Electricity Inc.

Te-Fu Chang

Chien-Shou Liao

Chun-An Lu

Yu-Min Huang

Sheng-Che Huang

A chip-transferring system and a chip-transferring method are provided. The chip-transferring system includes a substrate-carrying module for carrying a chip-carrying structure, a chip-transferring module, and a system control module. The chip-carrying structure includes a circuit substrate for carrying a plurality of conductive materials, a plurality of micro heaters, and a micro heater control chip. The chip-transferring module is configured for transferring a chip onto two corresponding ones of the conductive materials, and the chip-transferring module includes a motion sensing chip. When chip movement information of the chip that is provided by the motion sensing chip is transmitted to the system control module, the micro heater control chip is configured to control a corresponding one of the micro heaters to start or stop heating the two corresponding conductive materials by control of the system control module according to the chip movement information of the chip.

Chip-transferring system and chip-transferring method

A method of releasing a selected light-emitting diode chip from a plurality of light-emitting diode chips each of which has a p-type electrode, an n-type electrode and a central portion between the p-type electrode and the n-type electrode, comprising steps of: providing a first substrate with the plurality of light-emitting diode chips bonded thereon and spaced from each other in a pitch; and applying a laser spot generated from a laser energy source to reduce a bonding force between the selected light-emitting diode chip and the first substrate, thereby making the selected light-emitting diode chip release from the first substrate; wherein the laser spot has a coverage over the p-type electrode and the n-type electrode of the selected light-emitting diode chip, and the coverage has a length less than the pitch.

Method for selectively releasing a light-emitting diode chip and method of manufacturing light-emitting device

A micro heater chip, a wafer-level electronic chip assembly and a chip assembly stacking system are provided. The chip assembly stacking system includes a plurality of wafer-level electronic chip assemblies stacked on top of one another and electrically connected with each other. Each wafer-level electronic chip assembly includes a wafer-level electronic chip and a micro heater chip disposed on the wafer-level electronic chip. The micro heater chip includes a heating structure and an insulative structure disposed between the heating structure and the wafer-level electronic chip. The heating structure includes a carrier body, at least one micro heater disposed on or inside the carrier body, and a plurality of conductive connection layers passing through the carrier body. The insulative structure includes an insulative body disposed between the heating structure and the wafer-level electronic chip, and a plurality of conductive material layers passing through the insulative body.

Micro heater chip, wafer-level electronic chip assembly and chip assembly stacking system

An LED chip structure, a chip transferring system and a chip transferring method are provided. The chip transferring system includes a liquid receiving tank, an electromagnetic field generating module and a connection layer removing module. A plurality of LED chip structures are randomly distributed in the liquid substance of the liquid receiving tank. The electromagnetic field generating module movably is disposed inside or removed from the liquid receiving tank. The connection layer removing module is disposed above the circuit substrate. Each of the LED chip structures includes an LED chip, a removable connection layer and a magnetic material layer. The LED chip structure can be transferred from the liquid receiving tank onto a circuit substrate by the electromagnetic field generating module, and the magnetic material layer can be separated from the LED chip while the removable connection layer is removed by the connection layer removing module.

LED chip structure, chip transferring system and chip transferring method

A film structure, a chip carrier assembly, and a chip carrier device are provided. The film structure includes a film and a plurality of micro-heaters. In which, the film is applied on a substrate, and the plurality of micro-heaters is disposed on top of the film or in the film. The chip carrier assembly includes a circuit substrate and the film structure. In which, the circuit substrate carries a plurality of chips. The chip carrier device includes the chip carrier assembly and a suction unit. In which, the suction unit is arranged above the chip carrier assembly to attach on and transfer the plurality of chips to the circuit substrate. The chips are disposed on the circuit substrate through solder balls, and the micro-heaters heat the solder balls that are in contact with the chips.

Micro-heaters in a film structure mounted on a substrate between a plurality of electronic components

A wafer-grade LED detection device and a wafer-grade LED detection method are provided. The wafer-grade LED detection device includes a light-generating module for providing a first light beam that passes through an LED wafer to be converted into a second light beam, a light-filtering module adjacent to the LED wafer for receiving the second light beam that passes through the light-filtering module to be converted into a third light beam, and a light-detecting module adjacent to the light-filtering module for receiving and detecting the third light beam. A wavelength range of the second light beam is restricted by the light-filtering module, so that a wavelength range of the third light beam is smaller than the wavelength range of the second light beam. When the third light beam is received by the light-detecting module, the light-detecting module can detect the third light beam for obtaining relevant information.

Wafer-grade LED detection device and method

An LED wafer, an LED wafer detection device and an LED wafer detection method are provided. The LED wafer includes a wafer base, a plurality of LED chips, a plurality of positive test circuit layers, a plurality negative test circuit layers, a plurality of positive test contacts, and a plurality of negative test contacts. Each LED chip has a positive contact and a negative contact respectively electrically connected to the corresponding positive test circuit layer and the corresponding negative test circuit layer. The positive test contacts are respectively electrically connected to the positive test circuit layers, and the negative test contacts are respectively electrically connected to the negative test circuit layers. Whereby, when inputting an electric current into the positive test contacts, and then outputting the electric current from the negative test contacts, each LED chip is excited to generate a light source.

Growing community of inventors

Taichung, Taiwan

Te-Fu Chang