Hannstar Display Corporation

Te-Cheng Chung

Tean-Sen Jen

Ming-Tien Lin

Hsuan-Chen Liu

Sung-Chun Lin

Hsu-Ho Wu

Seok Lyul Lee

Chia-Te Liao

Deuk-Su Lee

Yi-Tse Lin

A liquid crystal display is provided. A liquid crystal display includes a first substrate having color filters therewith; a second substrate having plural first signal lines and plural second signal lines thereon; plural first openings located at intersections of said first signal lines and plural of second signal lines; and plural supports located at said plural first openings and between said first substrate and said second substrate, and separating said first substrate from said second substrate.

Spacing architecture for liquid crystal display and spacing method thereof

A data line repair structure for a liquid crystal display panel. The data line repair structure includes a first repair line parallel to a scan line and crossing the first end of a data line; a second repair line parallel to the data line and connected to a gate driving chip; and a third repair line parallel to the scan line and crossing the second end of the data line. When the data line has a broken point, the source driving chip transmits a data signal to a pixel electrode through the first repair line, the second repair line, and the third repair line.

Repair structure and method for liquid crystal display

A thin film transistor liquid crystal display. At least a gate line and a data line define at least one pixel area. An enclosed cavity is formed in the gate line to separate the gate line into a first gate region and a second gate region. A thin film transistor has a gate electrode that is the first gate region or the second gate region, a source electrode that is an extension of the data line and is over the enclosed cavity, and a drain electrode. A pixel electrode covers the pixel area and is electrically connected to the drain electrode.

Enclosed cavity formed inside a gate line of a thin film transistor and fabrication method thereof

A structure of the TFT array includes an additional row of pixel electrode coupled to the last scanning line for the last pixel electrode row. The last pixel electrode row has overlap with the last scanning line to form the equivalent storage capacitor. In addition, the liquid crystal exists on a portion of the pixel electrode row without overlapping with the last scanning line, resulting in the liquid crystal capacitor, which equivalent to the liquid crystal capacitor for the other scanning lines. The pixel electrode row can compensate the miss capacitance from the storage capacitor and the liquid crystal capacitor for the last scanning line. As a result, the difference of capacitive effect for the edge scanning line and the other scanning lines can be balanced, so as to improve the displaying quality.

Structure of a thin film transistor (TFT) array

A method of forming a TFT structure is performed on a glass substrate. A first metal layer deposited on the glass substrate is patterned with a first mask to form a gate line and a gate electrode. Next, a gate insulating layer, a first semiconductor layer and an etch-stop layer are successively formed, and backside exposure patterns the etch-stop layer. Thus, the remaining part of the etch-stop layer is disposed over the gate electrode and the gate line. Next, a second semiconductor layer and a second metal layer are successively formed, and then the second metal layer is patterned with a second mask to form a data line perpendicular to the gate line. Thereafter, the second semiconductor layer and the first semiconductor layer not covered by the second metal layer are removed. Next, a first protection layer formed on the exposed surface of the glass substrate is patterned with a third mask to form a first opening and a second opening, wherein the first opening is over the gate electrode and the second opening is over a predetermined drain electrode. Next, a conductive layer and a photoresist layer successively formed on the exposed surface of the glass substrate are patterned with a fourth mask to form a pattern of a predetermined pixel electrode. Finally, after removing the second metal layer and the second semiconductor layer underlying the first opening to expose the etch-stop layer, a second protection layer is formed on the first protection layer to fill the first opening.

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Taoyuan Hsien, Taiwan

Te-Cheng Chung