Other

Powerchip Semiconductor Corporation

Powerchip Technology Corporation

Im Solution Co., Ltd.

Robustflash Technologies Ltd.

Te-Chang Tseng

Riichiro Shirota

Chun-Yi Tu

Yukihiro Nagai

Hideki Arakawa

Hiroshi Watanabe

Takeshi Nakayama

Yamasaki Kyoji

Yung-Yueh Chiu

A semiconductor device based on SiC-MOSFET realizes high voltage endurance, high current, low breakover voltage, low switching loss and low noise. The SiC-MOSFET is a combination of a Si-MOSFET with high channel mobility and a drift layer formed by SiC with high bulk mobility, so that the first conductive SiC wafer forming the drift layer joins the second conductive Si wafer, excavates out a trench gate in part of the SiC to make the MOSFET, and a second conductive barrier layer is arranged in the Si region adjacent to the SiC.

Power semiconductor device

A network includes a logical network and a physical network. The logical network includes a plurality of logical nodes. Each logical node is connected to a respective identification core. Each identification core includes at least one semiconductor chip having a physical randomness. Each semiconductor chip generates one of a plurality of pairs of private keys and public keys based on the physical randomness thereof according to an input received by the one of the at least one semiconductor chip under a public key cryptography. One of the public keys is regarded as a logical address of one of the logical nodes, which is connected to one of the identification cores. The physical network includes a plurality of physical nodes. Each identification core is one of components in each physical node. The logical network is uniquely linked to the physical network by the pairs of private keys and public keys.

Network without abuse of a private key

A network of electronic appliances includes a plurality of network units of electronic appliances. The network units include a first network unit and a plurality of second network units. The first network unit is connected to at least one of the second network units. Each of the network units includes a stem server and a plurality of peripheral devices connected to the stem server. The stem server includes at least one passcode and at least one list of a plurality of registration codes. Each list is associated to a respective passcode. Each registration code of one list associating to one passcode corresponds to a respective peripheral device. Each registration code is generated in response to a respective passcode using physical randomness of a respective peripheral device in correspondence to the passcode. An address of each identification cell is defined by several word lines and bit lines.

Electronic appliance and network of the same

A cheap and high performance 1.5 transistor-type flash memory highly compatible externally of a memory region has a sacrifice film formed on a substrate. A U-shaped groove is formed on the sacrifice film, where multiple insulating films are laminated. The multiple insulating films includes a silicon nitride film as a charge storage layer. Low resistive material is disposed on the multiple insulating films to form a control gate. The select gate is formed on the insulating film on a side of the control gate in a self-aligned manner. Semiconductor regions opposite in conductivity to the substrate on both sides of the adjoining control gate and the select gate form a source and a drain, respectively. Thus, a 1.5 transistor-type flash memory is formed with the adjoining control gate and the select gate between the source and the drain. In a MOS-type transistor with the control gate, the threshold voltage is changeable according to injection/emission of the charge to the silicon nitride as the charge storage layer, and thus work as a non-volatile memory.

Flash memory having a U-shaped charge storage layer

A voltage adjusting circuit is provided. The voltage adjusting circuit for adjusting the output voltages supplied by voltage sources includes a test control device, a multiplexer, a comparator, and a built in self test (BIST) device. The test control device selects one of the voltage sources as a testing voltage source, and outputs a selecting command for selecting the testing voltage source and a target voltage corresponding to the testing voltage source. The multiplexer is coupled to the voltage sources, receives an enablement signal, and outputs a voltage supplied by the testing voltage source as a testing voltage according to the enablement signal. The comparator compares the voltage levels of the testing voltage and the target voltage, and outputs a comparison result. The BIST device receives the selecting command, outputs the enablement signal for enabling the testing voltage source according to the selecting command, and adjusts the voltage supplied by the testing voltage source to a predetermined voltage according to the comparison result.

Voltage adjusting circuits and voltage adjusting methods

The invention provides a memory device on a substrate. The memory device comprises semiconductor layers, common word lines, common bit lines and a common source line. The semiconductor layers are stacked on the substrate, wherein each semiconductor layer has a plurality of NAND strings, and each NAND string includes memory cells and at least a string selection transistor. The common word lines are configured above the semiconductor layers, wherein each common word line is coupled to the memory cells arranged in a same row of the semiconductor layers. The common bit lines are configured on the common word lines, wherein each common bit line is coupled to a first ends of the NAND strings arranged in the same column of the semiconductor layers. The common source line is configured on the common word lines and coupled to a second ends of the NAND strings of the semiconductor layers.

Memory device and operating method thereof

A memory device is provided. The memory device includes a memory array formed by a plurality of multi level cells, a determining circuit and a data reading circuit. The memory array includes a plurality of page units, each including a main data and an auxiliary data corresponding to the main data, wherein the auxiliary data includes a plurality of flag bits. The determining circuit generates a determination bit according to the flag bits. The data reading circuit obtains information corresponding to the main data according to the determination bit.

Memory device and data reading method

An integrated circuit is provided. The integrated circuit includes a memory device and a discharge circuit. The discharge circuit discharges the well voltage line and the first voltage line of the memory device after the end of the erasing period and includes a first and second switch circuit and a first and second control voltage supplier. The first switch circuit is coupled between the well voltage line, the first voltage line and a second supplier. The second switch circuit is coupled between the first switch circuit and a reference voltage. The first control voltage supplier is coupled to the first switch circuit and supplies a first control voltage to turn on the first switch circuit during a first discharge period. The second control voltage supplier is coupled to the second switch circuit, and supplies a second control voltage to turn on the second switch circuit during a second discharge period.

Integrated circuits and discharge circuits

A memory programming method is provided. A first programming operation is performed to program a multi level cell from an initial state to a first target state, which corresponds to a storage data and has a first threshold voltage range. A flag bit of the NAND flash is set to a first state to indicate that the first programming operation has been performed. A second programming operation is performed to program the multi level cell from the first target state to a second target state, which corresponds to the storage data and has a second threshold voltage range. The flag bit is set to a second state to indicate that the second programming operation has been performed.

Growing community of inventors

Hsinchu County, Taiwan

Te-Chang Tseng