Sharp Kabushiki Kaisha Corporation

The University of Tokyo

Tazuko Kitazawa

Noboru Iwata

Takanobu Sato

Yoshihiro Ueta

Teruhisa Kotani

Yoshiteru Murakami

Go Mori

Yasuhiko Arakawa

Eiji Satoh

Tomoki Ono

Tetsuo Iwaki

Hirofumi Yoshikawa

Takahiro Doe

Zenken Kin

A light-emitting device emits light in a first direction and also emits light in a second direction opposite to the first direction. The light-emitting device includes a first light-emitting layer configured to emit light of a first color, and a second light-emitting layer configured to emit light of a second color different from the first color. The first light-emitting layer and the second light-emitting layer overlap each other as viewed from the first direction. The light-emitting device reduces a difference in tinge between emission light in the first direction and emission light in the second direction.

Light-emitting device having double-sided light emissiion for reducing a difference in light emitted from different light emission direction

A light-emitting device includes, on a substrate, a red pixel electrode and a green pixel electrode, a common electrode, and a blue pixel electrode, in order from the substrate side, and includes a transparent region adjacent to a light-emitting region including a position overlapping the red light-emitting layer, the green light-emitting layer, and the blue light-emitting layer in a plan view. At least a part of the blue light-emitting layer overlaps the red light-emitting layer and the green light-emitting layer adjacent to the red light-emitting layer in the plan view.

Light emitting device

A display device includes: a TFT substrate including a thin film transistor; a light-emitting element including a first electrode and a second electrode overlapping each other in a plan view, and a light-emitting layer placed between the first electrode and the second electrode; a third electrode capable of forming an electrical field between the second electrode and the third electrode; an optical adjustment element overlapping the light-emitting layer in a plan view and having an optical characteristic that changes in accordance with a potential difference between the second electrode and the third electrode; and light scattering bodies included in at least one of the TFT substrate, the light-emitting element, and the optical adjustment element.

Display device

An infrared photodetection system is provided that is capable of measuring infrared light up to high-temperature regions while improving a temperature resolution for low-temperature regions without increasing image-acquisition time even if the measuring temperature range varies. The infrared photodetection system is set up to exhibit sensitivity spectrum SSPfor high sensitivity (for low temperature use) and sensitivity spectrum SSPfor low sensitivity (for high temperature use) in the transmission band of the bandpass filter when different voltages are applied to a quantum-dot infrared photodetector. The infrared photodetection system then integrates temperature data for the infrared light detected using sensitivity spectrum SSPand temperature data for the infrared light detected using sensitivity spectrum SSP, in order to output a temperature distribution in a measurement region.

Infrared photodetection system

Infrared detection systems according to embodiments include an infrared detector, a storage, and a correction calculator. The infrared detector is configured to detect infrared light by absorbing and photoelectrically converting infrared light of a specific wavelength range. The infrared detector is capable of sweeping an absorption peak wavelength of an absorption spectrum of infrared light. The storage is configured to store a plurality of correction coefficients for correcting a detection value from the infrared detector in accordance with the absorption peak wavelength of the infrared detector with respect to a wavelength range of an atmospheric window. The correction calculator corrects the detection value from the infrared detector for each absorption peak wavelength using corresponding correction coefficients stored in the storage.

Infrared detection system

There is provided a detector, and a method of calibrating or correcting a detection value in a wavelength range within an evaluable range by using a detection value in a wavelength range other than the evaluable range by using the detector. The detector includes an active layer containing a quantum well or quantum dots, and that is capable of sweeping a detection peak wavelength of a detection spectrum in a wavelength range within an evaluable range and a wavelength range other than the evaluable range, and is configured to correct or calibrate a detection value in the wavelength range within the evaluable range using a detection value in the wavelength range other than the evaluable range.

Detector, correction method and calibration method of detector, detection apparatus and detection system

Interference noise is eliminated and fitting accuracy is enhanced. A spectrum analysis apparatus includes an electromagnetic wave source configured to emit an electromagnetic wave having a wavelength from 0.1 mm to 10 mm, a spectrometer a detecting section configured to detect an emitted electromagnetic wave that exits from the measurement object, the wave being transmitted through or reflected by the measurement object, and to generate a detection signal; and an analyzing section configured to analyze the detection signal. The analyzing section has a noise eliminating unit configured to generate a noise eliminated signal by eliminating from the detection signal a round-trip electromagnetic wave having reciprocated twice or more inside the measurement object and then emitted from the measurement object, in the emitted electromagnetic wave. Furthermore, the analyzing section is configured to generate a transmission or reflection spectrum that is a corrected detection signal by using the noise eliminated signal.

Spectrum analysis apparatus and spectrum analysis method

An optical sensor system includes an optical sensor head having a light-emitting device and a detector which detects light emitted from the light-emitting device, and a calculator circuit. The light-emitting device includes a resonator which includes a first reflective surface, a second reflective surface facing the first reflective surface, and a waveguide provided between the first reflective surface and the second reflective surface. At least one metal microparticle capable of exciting surface plasmon is formed on the first reflective surface. The calculator circuit calculates an environment parameter at the first reflective surface on the basis of a detected value from the detector.

Optical sensor system

The invention intends to accurately measure a concentration of an object. An optical sensor () includes a detection light source () that emits measuring light, a light detection unit () that detects light intensity of the measuring light, which has been changed due to a change in optical characteristics of an object detection member (), and a reference light source () that emits reference light. Light intensity of the reference light is detected by the light detection unit () without being affected by the change in the optical characteristics of the object detection member. The two light sources are arranged under the same environment.

Light intensity detector and detection method

An optical sensor system is provided which can be used not only as an ordinary light source, but also to calculate an environmental parameter. Rear surface outgoing light () output from a rear surface () of a semiconductor laser () is used in a process of calculating an environmental parameter by control and arithmetic device () to, while front surface outgoing light () output from a front surface () is used in an application other than the calculation of the environmental parameter.

Optical sensor system, optical gas sensor system, particulate sensor system, light emitting apparatus, and image printing apparatus

An antireflective structure having a higher antireflective effect compared with those of conventional antireflective structures is produced by a simple process. The antireflective structure () includes a plurality of concavities () each having a plurality of convexities () thereon, and a pitch between the plurality of convexities () and a pitch between the plurality of concavities () are smaller than a wavelength of light incident to the antireflective structure ().

Optical element, and antireflective structure and process for production thereof

A photoelectric conversion device comprises a photoelectric conversion layer; a plurality of structures made of a dielectric substance; and a medium layer for transmitting light interposed between the photoelectric conversion layer and the structures or between the structures, or both, wherein the plurality of structures and the medium layer satisfy n&#x3e;nand D&#xd7;n/&#x3bb;&#x3c;0.3, wherein &#x3bb;is a maximal sensitivity wavelength at which the sensitivity of the photoelectric conversion layer to light energy is maximal, nis a refractive index of the medium layer at the wavelength &#x3bb;, nis a refractive index of the structures at the wavelength &#x3bb;, and Dis an average of shortest distances between an light exposure surface of the photoelectric conversion layer and the structures.

Photoelectric conversion device

An information recording device in accordance with the present invention obtains drive information of a semiconductor laser which is included in a magnetic head by means of a drive information obtaining section and successively records the information in a drive information storing section. A magnetic head control section controls the magnetic head in accordance with a condition of the semiconductor laser on the basis of the drive information thus obtained by the drive information obtaining section.

Information recording device detecting issues in a laser included therein and a method of controlling the same

Incident light can be efficiently converted into near-field light whose spot size is small. A waveguideincludes: a metallic membermade of a metallic material; and a dielectric membermade of a dielectric material. The metallic memberincludes a first interfaceand a second interfaceso as to sandwich the dielectric member. The first interface and the second interface are provided so that an inter-interface distance therebetween may decrease from endsandto endsand. The first interfaceand the second interfacehave flections Pand P, respectively.

Waveguide, recording head, and recording device

A near-field light generating device () which converts incident light into near-field light, includes: a metallic member () made of a metallic material; and a dielectric member () made of a dielectric material, the metallic member () having a first interface () and a second interface () that sandwich the dielectric member (), the first interface () and the second interface () having flections (Pand P), respectively, an inner-interface distance, which is a distance between the first interface () and the second interface (), being minimum at location of the flections (Pand P), and a rate of change of the inner-interface distance between the first interface () and the second interface () being asymmetrical with respect to the flections (Pand P). With the arrangement, it is possible to provide a minute near-field light generating device which can be easily fabricated and which can obtain high-intensity near-field light whose temporal change in intensity is small.

Growing community of inventors

Osaka, Japan

Tazuko Kitazawa