Sun Microsystems, Inc.

Tayung Wong

Clement Fang

John Carrillo

David Jeffrey

Neil Duncan

Jay C Robinson

Ashok Singhal

Han Y Ko

Nagaraj P Mitty

Kenneth J Gibbons

Nikhil Vaidya

A system and method for storing error correction check words in computer memory modules. Check bits stored within a given word line in a dynamic random access memory (DRAM) chip are assigned to different check words. By assigning check bits to check words in this manner, multi-bit soft errors resulting from the failure of a word line will appear as single-bit errors to an error correction subsystem.

Method for improving un-correctable errors in a computer system

A memory module for use in a two rank memory module system includes a plurality of memory devices and a control circuit. In one embodiment, the control circuit may be configured to generate a chip select signal that is provided to each of the memory devices. The chip select signal may be dependent upon assertions of a first bank chip select signal and a second bank chip select signal received from a memory controller. The control circuit may be further configured to generate an address signal that is provided to each of the memory devices. The address signal may be asserted dependent upon which of the first bank chip select signal and the second bank chip select signal are asserted.

Single rank memory module for use in a two-rank memory module system

A memory expansion module with stacked memory packages. A memory module is implemented using stacked memory packages. Each of the stacked memory packages contains multiple memory chips, typically DRAMs (dynamic random access memory). The memory may be organized into multiple banks, wherein a given memory chip within a stacked memory package is part of one bank, while another memory chip in the same package is part of another bank. The memory module also includes a clock driver chip and a storage unit. The storage unit is configured to store module identification information, such as a serial number. The storage unit is also configured to store information correlating electrical contact pads on the module with individual signal pins on the stacked memory packages. This may allow an error to be quickly traced to a specific pin on a stacked memory package when an error is detected on the memory bus by an error correction subsystem.

Memory expansion module with stacked memory packages and a serial storage unit

A system and method for storing error correction check words in computer memory modules. Check bits stored in physically adjacent locations within a dynamic random access memory (DRAM) chip are assigned to different check words. By assigning check bits to check words in this manner, multi-bit soft errors resulting from errors in two or more check bits stored in physically adjacent memory locations will appear as single-bit errors to an error correction subsystem. Similarly, the likelihood of multi-bit errors occurring in the same check word may be reduced.

System and method for improving multi-bit error protection in computer memory systems

A memory expansion module including multiple memory banks and a bank control circuit is disclosed. In one embodiment, a memory module includes a printed circuit board with a connector edge adapted for insertion in an expansion socket of a computer system. Mounted upon the circuit board is a plurality of memory chips, typically Dynamic Random Access Memory (DRAM) chips, which make up an upper bank and a lower bank of memory. A buffer circuit is mounted upon the printed circuit board, for the purpose of driving address signals, Column Address Strobe (CAS) signals, and write enable signals to each of the memory chips. Also mounted upon the printed circuit board is a bank control circuit, which is coupled to the memory chips. An address signal is used as a bank selection input to the bank control circuit, which will drive Row Address Strobe (RAS) signals to the memory chips of the selected memory bank. The bank control circuit is further configured to drive RAS signals to both banks simultaneously during CBR (CAS before RAS) refresh operations, which occur when a CAS signal is asserted before a RAS signal.

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Fremont, CA, United States of America

Tayung Wong