Jnc Corporation

Shizuoka University

Osaka University

Tauto Nakanishi

Junichi Takeya

Toshihiro Okamoto

Yoku Inoue

Takayuki Nakano

The invention shows a production apparatus for producing carbon nanotubes by the gas-phase catalysis process, comprising: a first chamber having a growth region that is a region in which carbon nanotubes are formed; a first temperature adjustment device capable of adjusting a temperature of the growth region in the first chamber; a pressure adjustment device capable of adjusting a pressure in the first chamber; a first feed device capable of feeding a carbon source to the growth region in the first chamber; a second temperature adjustment device capable of adjusting a temperature of a solid-phase iron family element-containing material disposed in the production apparatus; and a second feed device capable of feeding a gas-phase halogen-containing substance into the production apparatus so that the iron family element-containing material of which the temperature is adjusted to a predetermined temperature by the second temperature adjustment device can react with the halogen-containing substance.

Production method for carbon nanotubes

The invention shows a production method for carbon nanotubes. The production method comprises a first step of feeding at least one kind of gas-phase catalyst into a first chamber, the at least one kind of gas-phase catalyst being formed from an iron family element-containing substance and a halogen-containing substance that are contained in a first liquid; and a second step of forming the carbon nanotubes from a carbon source fed into the first chamber using a catalyst generated based on the gas-phase catalyst existing in the first chamber, wherein the first step includes vaporization of the first liquid, and the first liquid does not contain the carbon source.

An organic compound represented by formula (1) or formula (2) that is easy to synthesize, and has excellent chemical stability, semiconductor characteristics (high carrier mobility) and high solubility in a solvent.  in formula (1), X is oxygen, sulfur or selenium; n is 0 or 1; Rto Rare hydrogen, fluorine, alkyl having 1 to 20 carbons, aryl, pyridyl, furyl, thienyl, thiazolyl or the like. However, except for a case where X is selenium, a case where all of Rto Rare simultaneously hydrogen is excluded, and a case where X is sulfur and all of Rare simultaneously butyl is also excluded. In formula (2), X is oxygen, sulfur or selenium; n is 0 or 1; Rto Rare hydrogen, alkyl having 1 to 20 carbons, aryl, pyridyl, furyl, thienyl, thiazolyl or the like; however, a case where all of Rto Rare simultaneously hydrogen is excluded.

Chalcogen-containing organic compound and use thereof

An organic semiconductor thin film including an organic semiconductor material that is easily synthesized, and is chemically and physically stable, and shows a high carrier mobility, an organic semiconductor device and an organic field effect transistor including the organic semiconductor thin film are provided. An organic semiconductor thin film of the invention includes a compound represented by the following formula 1: 

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Chiba, Japan

Tauto Nakanishi