USA As Represented by Secretary of the Navy

University of California

Northrop Grumman Systems Corporation

Tatyana I Feygelson

Karl D Hobart

Marko J Tadjer

Travis J Anderson

Andrew D Koehler

Bradford B Pate

Francis J Kub

Mark Goorsky

Albert Epshteyn

Joshua D Caldwell

Jeffrey C Owrutsky

Paul A Desario

Samuel Graham, Jr

William Maza

Lunet E Luna

Zhe Cheng

Luke Yates

Tingyu Bai

Yekan Wang

Vanessa Breslin

Michael Anthony Mastro

Vincent Gambin

Ioulia Smorchkova

James E Butler

Gregory Todd Lewis

Rajinder S Sandhu

Carlos M Hangarter

Jeff McKay

Kendrick X Liu

Eugene I Imhoff

Carlos Hangarter

Disclosed is a method of irradiating a composition having water and hydrogen-terminated nanodiamonds with light that generates water-solvated electrons from the nanodiamonds. The method can be used to degrade fluoroalkyl compounds such as perfluorooctane sulfonate.

Nanodiamond reduction photochemistry

A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred &#x3c;110&#x3e; orientation texture, which in turn enhances the thermal conductivity of the diamond film.

Diamond on nanopatterned substrate

A device structure and method for improving thermal management in highly scaled, high power electronic and optoelectronic devices such as GaN FET and AlGaN/GaN HEMT devices by implementing diamond air bridges into such devices to remove waste heat. The diamond air bridge can be formed from a polycrystalline diamond material layer which can be grown on the surface of a dielectric material layer, on the surface of a III-nitride material, or on the surface of a diamond polycrystalline nucleation layer, and may be optimized to have a high thermal conductivity at the growth interface with the underlying material.

Diamond air bridge for thermal management of high power devices

A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN high-electron-mobility transistor (HEMT). The diamond gate electrode is formed so that it directly contacts the barrier layer. In some embodiments, the diamond gate electrode is formed from boron-doped nanocrystalline diamond (NCD), while in other embodiments, the diamond gate electrode is formed from single crystal diamond.

Transistor with diamond gate

An array of through-silicon vias (TSVs) are formed in a silicone substrate. The vias can be tapered such that the diameter of the via at the surface of the substrate is larger than the diameter of the via at its bottom, with the diameter varying continuously along its depth. After the via is formed, it is seeded with a thin layer of nanocrystalline diamond (NCD) particles, and a NCD film is grown on the bottom and along the sidewalls of the via. The presence of the diamond-filled vias provides improved thermal management to semiconductor devices formed on the silicon substrate.

Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

A method for fabricating a semiconductor device, such as a GaN high electron mobility transistor (HEMT) device, including etching a thermal via into a back-side of a semiconductor substrate and depositing a diamond nucleation seed layer across the back-side of the substrate. The method further includes coating the diamond nucleation with a mask layer and removing mask material outside of the thermal via on the planar portions of the back-side of the substrate. The method includes removing portions of the diamond nucleation layer on the planar portions and then removing the remaining portion of the mask material in the thermal via. The method then includes depositing a bulk diamond layer within the thermal via on the remaining portion of the diamond nucleation layer so that diamond only grows in the thermal via and not on the planar portions of the substrate.

Selective deposition of diamond in thermal vias

A heterojunction between thin films of NCD and 4H&#x2014;SiC was developed. Undoped and B-doped NCDs were deposited on both n&#x2212; and p&#x2212; SiC epilayers. I-V measurements on p+ NCD/n&#x2212; SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30&#xb0; C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.

Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices

Growing community of inventors

Springfield, VA, United States of America

Tatyana I Feygelson