Denso Corporation

Tatuyuki Hanazawa

Shoichi Onda

Yasuo Kito

Eiji Kitaoka

Youichi Kotanshi

A (111) cubic silicon carbide single-crystal layer is formed on a (111) silicon wafer, and then the silicon wafer is removed. Thus prepared (111) cubic silicon carbide single-crystal layer is disposed in a graphite crucible to function as a seed crystal. Silicon carbide source material powder is also held in the graphite crucible and sublimated in an atmosphere including inert gas, while controlling a temperature of the (111) cubic silicon carbide single-crystal layer to be lower than a temperature of the silicon carbide source material powder. As a result, a (0001) .alpha.-type silicon carbide single-crystal layer can be formed on the (111) cubic silicon carbide single-crystal layer with a large diameter and high quality at low cost.

Growing community of inventors

Okazaki, Japan

Tatuyuki Hanazawa