Ibiden Company Limited

Tatsuzo Kawaguchi

Katsuya Okumura

Takahiro Kitano

Muneo Harada

Yoshihiro Hirota

Shuichi Kawano

Tomotaka Shinoda

Yoshiki Yamanishi

Kinji Yamada

A capacitor having a high quality and a manufacturing method of the same are provided. A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.

Capacitor and manufacturing method thereof

A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.

Dielectric film capacitor and method of manufacturing the same

Growing community of inventors

Sendai, Japan

Tatsuzo Kawaguchi