Fujitsu Corporation

Fujitsu Limited of 1015

Tatsuyuki Sanada

Osamu Wada

Shuichi Miura

Shigenobu Yamakoshi

Hideki Machida

Teruo Sakurai

Masao Makiuchi

Tetsufumi Odagawa

As semiconductor device includes a substrate and first and second semiconductor light receiving elements which are spaced apart and monolithically integrated on the substrate. The light receiving elements each has first and second terminals. A first flip-chip bonding pad is formed on the surface of the device and the device includes a first conductor element which electrically interconnects the first terminals of the elements in series and includes a centrally disposed portion that is electrically connected to the first flip-chip bonding pad. Second and third flip-chip bonding pads are also formed on a surface of the device and elongated electrodes are provided for electrically interconnecting the second terminal of the first light receiving element with the second flip-chip bonding pad and the second terminal of the second light receiving element with the third flip-chip bonding pad. The elongated electrodes have essentially the same length so as to stabilize the optical and electrical balance characteristics of the device and provide a satisfactory dual balance optical receiver.

Semiconductor device having flip chip bonding pads matched with pin

An optical bistable laser diode includes an elongated intrinsic active semiconductor element having upper and lower surfaces and a pair of spaced ends. A semiconductor clad layer is disposed on one of the surfaces of the semiconductor element and another semiconductor clad layer of a different conduction type is disposed on the other surface of the semiconductor element. One of the semiconductor layers is coextensive in length with the semiconductor element. The diode includes a mirror at each end of the semiconductor element presenting a resonator. The diode also includes first and second electrodes on the coextensive semiconductor layer. One electrode extends along the semiconductor layer from one end thereof for a distance L.sub.1. The other electrode extends along the semiconductor layer from the other end thereof for a distance L.sub.2. The electrodes are disposed in longitudinal alignment and the same are spaced apart a distance L.sub.3 presenting a gap therebetween defining a saturable absorption region in the active semiconductor layer. The distances L.sub.1, L.sub.2 and L.sub.3 are such that the same satisfy the relationship

Optical bistable laser diode and a method for controlling the same

A semiconductor device including a substrate having a low substrate surface formed in the substrate with a first gentle slope from the substrate surface; a single crystalline layer formed on the low substrate surface nearly level with the substrate surface and having a gentle slope facing the first gentle slope; an optical semiconductor element is constructed using the single crystalline layer. An electronic semiconductor element is constructed using the substrate surface. A wiring layer connects electrodes of the optical semiconductor element and the electronic semiconductor element through the first and the second gentle slopes.

Method for producing a monolithically integrated optoelectronic device

Optoelectronic integrated circuit

Growing community of inventors

Yokohama, Japan

Tatsuyuki Sanada