Mitsubishi Heavy Industries Limited

Nippon Telegraph and Telephone Corporation

Tatsuyuki Nishimiya

Takashi Shoji

Kenji Muta

Osamu Tadanaga

Akio Tokura

Hiroomi Miyahara

Satoshi Sakai

Takahiro Kubota

Yoichiro Tsumura

Kohei Kawazoe

Yoshiaki Takeuchi

Tatsufumi Aoi

Takashi Ishide

Saneyuki Goya

Atsushi Yuge

Shuuji Fujii

Akemi Takano

Masayoshi Murata

Shigenori Tsuruga

Nobuki Oka

Hirotaka Oka

Tatsuji Horioka

Tomoyoshi Baba

Kanta Inoue

Kazutaka Uda

Syouji Morita

Shinsaku Dobashi

Akira Dohi

Tatsuhiro Maruyama

Nobuharu Iwashita

A gas analysis system includes: a laser light source for emitting a laser light to be transmitted through an analysis target gas; a photodetector configured to receive the laser light transmitted through the analysis target gas, for outputting a signal corresponding to an emission intensity of the received laser light; a gas analysis apparatus for analyzing the analysis target gas on the basis of the signal outputted from the photodetector; a variable light attenuator disposed between the analysis target gas and the laser light source; a transmitted-light amount detector configured to evaluate a transmitted light amount of the laser light transmitted through the analysis target gas on the basis of the signal outputted from the photodetector; and an attenuation amount controller configured to control an attenuation amount of the variable light attenuator on the basis of the transmitted light amount of the laser light evaluated by the transmitted-light amount detector.

Gas analysis system and boiler

This NO analysis device is provided with: a light source () which radiates laser light onto an exhaust gas () containing NO, HO and CO; a light receiver () which receives the laser light that has been radiated onto the exhaust gas (); a light source control unit () of a control device (), which controls the wavelength of the laser light radiated by the light source () to between 3.84 &#x3bc;m and 4.00 &#x3bc;m; and a signal analyzing unit () of the control device (), which calculates the NO concentration by means of infrared spectroscopy, using the laser light received by the light receiver () and the laser light controlled by the light source control unit () of the control device ().

[object Object]

To provide an SOanalysis device and analysis method capable of accurately and rapidly measuring the concentration of SOin exhaust gas without pre-processing. The present invention is provided with a light source () for radiating laser light () to exhaust gas () including SO, CO, and HO, a photodetector () for receiving the laser light () radiated to the exhaust gas (), a light source control unit () of a control device () for controlling the wavelength of the laser light () radiated by the light source () so as to be 4.060 &#x3bc;m to 4.192 &#x3bc;m, and a concentration calculation unit () of the control device () for calculating the SOconcentration by infrared spectroscopy on the basis of the output from the photodetector () and a reference signal from the light source control unit ().

SO3 analysis method and analysis device

Provided is a photoelectric conversion device fabrication method in which current leakage from an intermediate contact layer via an intermediate-contact-layer separating groove is prevented as much as possible. Included are a step of film-forming a top layer having amorphous silicon as a main component; a step of film-forming, on the top layer, an intermediate contact layer electrically and optically connected thereto; a step of separating the intermediate contact layer by removing the intermediate contact layer by irradiating it with a pulsed laser, forming an intermediate-contact-layer separating groove that reaches the top layer; and a step of film-forming, on the intermediate contact layer and inside the intermediate-contact-layer separating groove, a bottom layer electrically and optically connected thereto and having microcrystalline silicon as a main component. A pulsed laser having a pulse width of 10 ps to 750 ps, inclusive, is used as the pulsed laser for separating the intermediate contact layer.

Photoelectric conversion device fabrication method and photoelectric conversion device

An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.

Photoelectric-conversion-device fabrication method

A vacuum treatment method and a vacuum treatment apparatus are provided in which the SiH/SiH ratio does not increase even when the deposition rate is increased, thereby deterioration in the film quality is prevented and a high level of productivity can be achieved. A vacuum treatment method comprising the steps of heating a substrate () disposed inside a deposition chamber () under a reduced pressure atmosphere using a heat spreader (a heating device) (), and supplying electric power to a discharge electrode () disposed in a position facing the substrate (), thereby conducting a deposition on the substrate (), wherein the deposition is conducted in a state where the temperature difference between the substrate () and the discharge electrode () is not more than 30&#xb0; C. The deposition may also be conducted with the gap between the substrate () and the discharge electrode () set to not more than 7.5 mm.

Vacuum treatment method

An amorphous silicon solar cell includes a substrate, a transparent electrode formed on this substrate, a power-generating film formed on this transparent electrode, and a back-side electrode formed on this power-generating film. The power-generating film is formed by sequentially stacking p-type/i-type/n-type hydrogenated amorphous silicon layers. The defect density of the i-type hydrogenated amorphous silicon layer is less than 10,defects/cc.

Amorphous silicon solar cell

Growing community of inventors

Tokyo, Japan

Tatsuyuki Nishimiya