Fujitsu Corporation

Fujitsu Microelectronics Limited

Tatsuya Yokota

Naoya Sashida

Yasutaka Ozaki

Kaoru Saigoh

Kenichi Inoue

Satoru Mihara

Yukinobu Hikosaka

Jirou Miura

Takeyasu Saito

Koji Tani

Yoshinori Obata

Nobutaka Ohyagi

The semiconductor device comprises a capacitor formed over a semiconductor substrateand including a lower electrode, a dielectric filmformed over the lower electrode and an upper electrodeformed over the dielectric film, a first insulation filmformed over the semiconductor substrate and the capacitor, a first interconnectionformed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive filmfor preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation filmformed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation filmformed over the second insulation film, a second interconnectionformed over the third insulation film, and a second hydrogen diffusion preventive filmfor preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.

Semiconductor device and method for fabricating the same

A W plug () is formed and a W oxidation preventing barrier metal film () is formed thereon. After that, an SiON film () thinner than the W oxidation preventing barrier metal film () is formed and Ar sputter etching is performed on the SiON film (). As a result, the shape of the surface of the SiON film () becomes gentler and deep trenches disappear. Next, an SiON film () is formed on the whole surface. A voidless W oxidation preventing insulating film () is composed of the SiON () film and the SiON film ().

Method of manufacturing semiconductor device

A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

Semiconductor device and method of manufacturing the same

There are contained the steps of forming sequentially a first conductive film, a dielectric film, and a second conductive film on a first insulating film, forming an upper electrode of a capacitor by patterning the second conductive film, patterning the dielectric film to leave under the upper electrode, forming a lower electrode of the capacitor by patterning the first conductive film, covering the capacitor and the first insulating film with a second insulating film, and annealing at least one of the first insulating film and the second insulating film in an inert-gas atmosphere and then exposing the film to an NO plasma.

Method of manufacturing a FeRAM with annealing process

A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into the contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

Growing community of inventors

Kawasaki, Japan

Tatsuya Yokota