Tokyo Electron Limited

Tatsuya Watanabe

Yuichi Takenaga

A temperature correction information calculating device for use with a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus is configured to correct a preset temperature in accordance with an accumulated film thickness on an inner wall of the semiconductor manufacturing apparatus, control a temperature by using a heater such that the temperature approaches the corrected preset temperature, and perform a deposition process on an object. The temperature correction information calculating device includes a memory, and a processor coupled to the memory and configured to store a temperature correction value for correcting the preset temperature, obtain first heater power applied to the heater, predict second heater power by adding, to the first heater power, a variation of heater power due to a preset temperature change, and correct the temperature correction value based on the predicted second heater power. The first heater power is included in log information.

Temperature correction information calculating device, semiconductor manufacturing apparatus, recording medium, and temperature correction information calculating method

A temperature correction information calculation device includes a model storage unit that stores a model for generating temperature correction information in which a temperature correction value is associated with a cumulative film thickness on an inner wall of a semiconductor manufacturing apparatus that forms a film on a processing target object by a heat treatment at a set temperature corrected according to the cumulative film thickness; a learning determination unit that determines whether or not to update the model when a film forming result by the heat treatment is obtained; a model learning unit that updates the model based on the film forming result when the learning determination unit determines to update the model; and a temperature correction information generation unit that generates the temperature correction information using the model updated by the model learning unit and corrects the set temperature by the temperature correction information.

Temperature correction information calculation device, semiconductor manufacturing apparatus, storage medium, and temperature correction information calculation method

A substrate processing apparatus includes: a processing container, a temperature adjustment unit, and a controller. The controller includes a calculation unit that calculates a correction temperature for uniformizing a film thickness within a plane of each substrate, a first temperature change amount calculation unit that calculates a first temperature change amount based on the correction temperature and a thermal model, a second temperature change amount calculation unit that calculates a second temperature change amount based on a simulation of a temperature sequence using the calculated correction temperature, a temperature comparison unit that calculates a temperature difference between the first and second temperature change amounts, a film thickness information calculation unit that calculates information on a film thickness, and a temperature regulation information calculation unit that calculates temperature regulation information to uniformize a film thickness for each of a plurality of zones based on the information on the film thickness.

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Yamanashi, Japan

Tatsuya Watanabe