Renesas Electronics Corporation

Nec Electronics Corporation

Nec Corporation

Photonics Electronics Technology Research Association

Tatsuya Usami

Koichi Ohto

Noboru Morita

Sadayuki Ohnishi

Yoichi Sasaki

Keiji Sakamoto

Toshiyuki Takewaki

Nobuyuki Yamanishi

Yoshiaki Yamamoto

Hidemitsu Aoki

Hiroyuki Kunishima

Koji Arita

Ryohei Kitao

Yoshihiro Hayashi

Shinichi Watanuki

Kazuhiko Endo

Hideaki Tsuchiya

Hidenobu Miyamoto

Hiraku Ishikawa

Yukio Miura

Kouichi Ohto

Kouji Arita

Keizo Kinoshita

Yasuhiko Ueda

Masaru Wakabayashi

Ryouhei Kitao

Youichi Sasaki

Yasutaka Nakashiba

Takashi Yokoyama

Norio Okada

Munehiro Tada

Ken Ozawa

Noriaki Oda

Tsuyoshi Horikawa

Shinya Yamasaki

Yasuaki Tsuchiya

Hiroto Ohtake

Tomoyuki Nakamura

Fuminori Ito

Hiroaki Tomimori

Tohru Mogami

Yoshimichi Harada

Takamasa Tanikuni

Hironobu Miyamoto

Akira Matsumoto

Takashi Ogura

Takashi Ishigami

Jun Kawahara

Hironori Yamamoto

Seiji Nagahara

Masayuki Hiroi

Kenichi Koyanagi

Tetsuya Homma

Koji Kishimoto

Masami Sawada

Tomoo Nakayama

Satoshi Kodama

Nobuaki Hamanaka

Takashi Tonegawa

Kunihiro Fujii

Shinji Yokogawa

Takamasa Itou

Kazutoshi Shiba

Tetsuya Kurokawa

Satoshi Itou

Hiroshi Kitajima

Kouichi Owto

Shuuichirou Ueno

Chikako Ohto

Naoki Fujimoto

A Semiconductor device includes a substrate and a thermal conductive film. The substrate has a top surface and a back surface which oppose with each other. A first opening is formed on the back surface of substrate. The thermal conductive film includes a first thermal conductive portion formed in the first opening. The first thermal conductive portion is embedded in the first opening such that a void is formed in the first opening.

Semiconductor device

An SOI substrate is attracted to and detached from an electrostatic chuck included in a semiconductor manufacturing device without failures. A semiconductor device includes a semiconductor substrate made of silicon, a first insulating film formed on a main surface of the semiconductor substrate and configured to generate compression stress to silicon, a waveguide, made of silicon, formed on the first insulating film, and a first interlayer insulating film formed on the first insulating film so as to cover the waveguide. Further, a second insulating film configured to generate tensile stress to silicon is formed on the first interlayer insulating film and in a region distant from the optical waveguide by a thickness of the first insulating film or larger. The second insulating film offsets the compression of the first insulating film.

Semiconductor device and method of manufacturing the same

A method of manufacturing the semiconductor device includes: (a) providing a substrate having a semiconductor layer; (b) forming a first insulating film over an insulating layer so as to cover the semiconductor layer; (c) forming an opening extending through the first insulating film and reaching the semiconductor layer; (d) forming, over the semiconductor layer exposed at a bottom surface of the opening, a semiconductor portion having a thickness smaller than that of the first insulating film over the semiconductor layer by a selective epitaxial growth method; (e) forming a second insulating film over the first insulating film and the semiconductor portion; (f) removing the second insulating film from over the first insulating film, while leaving the second insulating film in the opening; (g) removing a semiconductor particle formed over the first insulating film in the (d); and (h) forming a third insulating film over the first insulating film.

Method of manufacturing semiconductor device

Reliability of a semiconductor device is improved. A first pad electrode is formed in an uppermost layer of a multilayer wiring layer, an insulating film of a non-organic material is formed over the first pad electrode, and an organic insulating film is formed over the insulating film. In the organic insulating film, an opening reaching the first pad electrode and a groove reaching the insulating film are formed. Over the organic insulating film, a plurality of re-wirings each having a barrier metal film and a conductive film are formed. In a plan view, the groove is formed in an area between the re-wirings. At the same time, a width of the groove is smaller than a width of a first portion or a width of a second portion of the re-wirings, respectively, neighboring to each other and extending in a first direction.

Semiconductor device and method for manufacturing the same

The reliability of a semiconductor device is improved. A photoresist pattern is formed over a semiconductor substrate. Then, over the semiconductor substrate, a protective film is formed in such a manner as to cover the photoresist pattern. Then, with the photoresist pattern covered with the protective film, an impurity is ion implanted into the semiconductor substrate. Thereafter, the protective film is removed by wet etching, and then, the photoresist pattern is removed.

Method for manufacturing a semiconductor device having a step of performing ion implantation using a resist pattern as a mask

A semiconductor device and a manufacturing method thereof according to the present invention include: a first pad electrode formed in an uppermost wiring layer of a multilayer wiring layer; a first insulating film formed on the first pad electrode; and a first organic insulating film formed over the first insulating film. Also, the semiconductor device and the manufacturing method thereof include: a barrier metal film formed on the first organic insulating film and connected to the first pad electrode; and a conductive film formed on the barrier metal film. Then, a second insulating film made of an inorganic material is formed on an upper surface of the first organic insulating film between the barrier metal film and the first organic insulating film.

Semiconductor device and manufacturing method thereof

An object of the present invention is to reduce the manufacturing cost of a semiconductor device. A semiconductor device includes a SOI substrate that has an optical waveguide including a semiconductor layer. The optical waveguide is covered with an interlayer insulating film. Wiring parts are formed on the interlayer insulating film. Moreover, a thin film part having a smaller thickness than the wiring parts is formed above the optical waveguide and is integrated with the wiring parts.

Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.

Optical semiconductor device, and method for producing the same

To improve the characteristics of a semiconductor device having a substrate contact formed in a deep trench. In a method of forming a plug PSUB in a deep trench DTthat penetrates an n-type buried layer NBL and reaches a p-type epitaxial layer PEP, the plug PSUB is formed in the deep trench DTafter a metal silicide layer SILis formed in the p-type epitaxial layer PEP. The metal silicide layer SILis formed using a PVD-first metal film (a first metal film formed by PVD). A first barrier metal film BMat the bottom of the plug PSUB is a CVD-second metal film (a second metal film formed by CVD). The first metal film is a metal film different from the second metal film.

To provide a semiconductor device having a substrate contact in a deep trench thereof and having an improved characteristic. A PVD-metal film (metal film formed by PVD) is used as a first barrier metal film which is a lowermost layer barrier metal film formed in a deep trench penetrating an n type epitaxial layer and a reaching a layer therebelow. Such a configuration makes it possible to stably form a metal silicide layer at a boundary between the PVD-metal film and a silicon layer therebelow (or silicon substrate) and thereby stabilize the contact resistance.

Semiconductor device and method of manufacturing semiconductor device

Good optical properties can be achieved in an optical waveguide made of polycrystalline silicon. A semiconductor layer that constitutes each of a first optical signal line, a second optical signal line, a grating coupler, an optical modulator, and a p-type layer of a germanium optical receiver is formed by a polycrystalline silicon film. Crystal grains of polycrystalline silicon exposed on an upper surface of the semiconductor layer include crystal grains having flat surfaces parallel to a first main surface of a semiconductor substrate, and crystal grains of polycrystalline silicon exposed on side surfaces (including side surfaces of a protrusion of a protruding portion) of the semiconductor layer include crystal grains having flat surfaces perpendicular to the first main surface of the semiconductor substrate.

Semiconductor device and method for manufacturing same

A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer.

There is to provide a semiconductor device including a light receiving element capable of reducing the manufacturing cost and improving the optical performance of the light receiving element. For example, a p type germanium layer, an intrinsic germanium layer, and an n type germanium layer forming the structure body of a Ge photodiode are formed according to a continuous selective epitaxial growth. An insulating film having an opening portion is formed on the silicon layer of a SOI substrate, and an intrinsic germanium layer is formed bulging from the opening portion to above the insulating film. In short, by using the insulating film having the opening portion, the cross section of the intrinsic germanium layer is formed into a mushroom shape.

Semiconductor device and its manufacturing method

A rectangular optical waveguide, an optical phase shifter and an optical modulator each formed of a semiconductor layer are formed on an insulating film constituting an SOI wafer, and then a rear insulating film formed on a rear surface of the SOI wafer is removed. Moreover, a plurality of trenches each having a first depth from an upper surface of the insulating film are formed at a position not overlapping with the rectangular optical waveguide, the optical phase shifter and the optical modulator when seen in a plan view in the insulating film. As a result, since an electric charge can be easily released from the SOI wafer even when the SOI wafer is later mounted on the electrostatic chuck included in the semiconductor manufacturing apparatus, the electric charge is less likely to be accumulated on the rear surface of the SOI wafer.

Semiconductor device and manufacturing method of the same

Growing community of inventors

Kanagawa, Japan

Tatsuya Usami