Fujitsu Corporation

Sumitomo Electric Device Innovations, Inc.

Shinko Seiki Company, Limited

Other

Eudyna Devices Inc.

Senju Metal Industry Co., Ltd.

Tatsuya Takeuchi

Keisuke Shinagawa

Shuzo Fujimura

Taro Hasegawa

Takeshi Miyanaga

Yoshimasa Nakano

Yuuji Matoba

Tsuyoshi Yamamoto

Satoru Mihara

Mitsuru Ekawa

Rikiya Kato

Ayahito Uetake

Yasuhide Ohno

Kan Takada

Keisuke Saito

Sakie Yamagata

Tadatomo Suga

Johji Kagami

Yoshikazu Matsuura

Taizo Hagihara

Keisuke Taniguchi

An optical semiconductor device has: a semiconductor structure; a mesa structure including the semiconductor structure, a p-type semiconductor layer formed on a plane portion, a first side face and a second side face of the mesa structure, and a high-resistance semiconductor layer burying the mesa structure and the p-type semiconductor layer. The first side face is inclined toward a principal surface of the substrate more than the second side face. The p-type semiconductor layer has a carrier concentration in a portion related to the first side face lower than that of a portion related to the plane portion and the second side face. A distance between a lower end of the active layer and a boundary between the first side face and the second face in a vertical direction to the plane portion is not less than 0.1 &#x3bc;m and not more than 0.5 &#x3bc;m.

Optical semiconductor device and method for manufacturing the same

A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer.

Optical semiconductor device and method of manufacturing optical semiconductor device

A method of manufacturing an optical semiconductor device includes: forming a mesa structure having an n-type cladding layer, an active layer and a p-type cladding layer in this order on a substrate; forming a p-type semiconductor layer on a side face of the mesa structure and a plane area located at both sides of the mesa structure, the p-type semiconductor layer having a thickness of 5 nm to 45 nm on the plane area; and forming a current blocking semiconductor layer on the p-type semiconductor layer so as to bury the mesa structure, a product of the thickness of the p-type semiconductor layer and a concentration of p-type impurity of the p-type semiconductor layer on the plane area being 2.5&#xd7;10nm/cmor less.

To facilitate bonding of articles at a low temperature without degrading electrical contact between the articles. An oxide film reducing treatment with hydrogen radicals is carried out for surfaces of lead-out electrodes () and bump electrodes () on the lead-out electrodes () of a semiconductor chip () and surfaces of lead-out electrodes () of an intermediate substrate (), and, after that, the bump electrodes () of the semiconductor chip () and the lead-out electrodes () of the intermediate substrate () are aligned with each other. After that, a pressure is applied to bond the bump electrodes () and the lead-out electrodes ().

Bonding method and bonding apparatus

In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5&#xd7;10cmand the Fe concentration is 1.8&#xd7;10cm. In a semi-insulating burying layer, Fe is doped as an impurity generating a deep acceptor level and the concentration thereof is 6.0&#xd7;10cm. The Fe concentration in the p-type clad layer is thus three times higher than the Fe concentration in the burying layer.

Semiconductor optical device and manufacturing method thereof

An optical semiconductor, includes a semiconductor substrate having a (100) principal surface, a waveguide mesa stripe formed on a first region of the semiconductor substrate, the waveguide mesa stripe guiding a light therethrough; a plurality of dummy mesa patterns formed on the semiconductor substrate in a second region at a forward side of the first region, and a semi-insulating buried semiconductor layer formed on the semiconductor substrate so as to cover the first and second regions continuously, the semi-insulating buried semiconductor layer filling a right side and a left side of the waveguide mesa stripe in the first region and a gap between the plurality of dummy mesa patterns in the second region.

Optical semiconductor device and fabrication process thereof

A method of fabricating a semiconductor device includes the steps of forming a step region having a mesa shape in a direction of &#x3c;011&#x3e; or &#x3c;0-11&#x3e; on a (100) plane of an InP-based compound semiconductor crystal, and burying the step region with InP-based buried layers grown by vapor-phase growth by supplying a base gas to which a chlorinated organic compound is added, the organic chlorine compound including at least two carbon atoms, and each of the carbon atoms is bonded to one chlorine (Cl) atom in one molecule. The chlorinated organic compound is any one of 1,2-dichloroethane, 1,2-dichloropropane, and 1,2-dichloroethylene.

Method of fabricating semiconductor device

A soldering method includes exposing a solder paste including a solder powder and a flux on a member to a free radical gas and heating the solder paste to reflow the solder paste and vaporize any active components in the solder paste. Any flux residue is free of active components, so it is not necessary to perform cleaning after soldering to remove flux residue.

Reflow soldering method

A steam supplying apparatus for supplying steam to an ashing process. The apparatus includes a closed water-containing vessel formed from a material having good heat conductive characteristics for evaporating water to provide steam to a vacuum chamber housing an on going ashing process. The closed vessel has a maximum horizontal cross sectional water evaporation area M and a minimum horizontal cross sectional water evaporation area S. The vessel is configured so that M/S&lt;8, and the closed vessel has a submerged inside surface which is coated with a resin. The closed water-containing vessel is provided with a steam outlet connected thereto at a location above the surface of the water therein. The apparatus further includes a temperature-controlled liquid bath for the closed water-containing vessel and the vessel is at least partially submerged in the liquid bath.

Steam supplying apparatus and method for controlling same

A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate having a step on a surface thereof and growing a group III-V compound semiconductor layer on a surface of the semiconductor substrate by metal organic vapor phase epitaxy using a source gas added with halogenated hydrocarbon containing one or two halogen atoms per one molecule. The surface of a substrate with a step thereon can be planarized by depositing an embedding layer on a lower level area.

Planarized growth of III-V compound

A method for controlling an apparatus for supplying steam to an ashing process. The apparatus includes a closed water-containing vessel formed from a material having good heat conductive characteristics for evaporating water to provide steam to a vacuum chamber housing an ongoing ashing process. In accordance with the procedure, steam evaporated in a closed steam supply tank is introduced into a vacuum chamber via a pressure reducing mass-flow controller. The temperature of the water in the supply tank, the temperature of the steam in the pipes leading from the supply tank to the mass-flow controller, the temperature of the steam in the pipes from the mass-flow controller to the vacuum chamber and the temperature of the steam in the mass-flow controller itself are all independently controlled such that the temperature in the water tank is equal to or less than the temperature in the pipes leading to and from the mass-flow controller and the temperature in the pipes is less than or equal to the temperature in the mass-flow controller.

Method for controlling apparatus for supplying steam for ashing process

A method of manufacturing a semiconductor device including the steps of: forming an insulating film on a silicon substrate; forming a resist pattern on the insulating film; etching the insulating film by using the resist pattern as an etching mask to expose a surface of the silicon substrate; and ashing the resist pattern and etching a surface layer at the exposed surface of the silicon substrate at the same time. The ashing/etching step may be performed first at a high temperature at or above 40.degree. C. and then at a lower temperature.

Growing community of inventors

Yokohama, Japan

Tatsuya Takeuchi