Ricoh Company, Ltd.

Semiconductor Energy Laboratory Co., Ltd.

Mitsubishi Electric Corporation

Panasonic Intellectual Property Management Co., Ltd.

Mitsubishi Chemical Corporation

Fuji Photo Film Company, Limited

Amada Company, Limited

Tatsuya Takahashi

Kazuhiro Fujita

Takehiro Nishimori

Toshiharu Murai

Ikuo Maeda

Shunpei Yamazaki

Junichiro Sakata

Hiroyuki Miyake

Hideaki Kuwabara

Issei Abe

Yohei Takano

Kasumi Nakamura

Shigeo Hayashi

Miyuki Hosoba

Naoki Nakamura

Makoto Hirakawa

Tamae Moriwaka

Takanobu Osaka

Tae Mochizuki

Tatsuo Koga

Yuuki Enatsu

Takahiro Kado

Kenji Iso

Jun Sato

Go Maruyama

Junichi Kitabayashi

Kazuhiro Ochi

Ichio Akami

Koichi Ishibashi

Jun Kishiwada

Tetsuaki Kato

Teruyuki Kubota

Kaoru Itoh

Akihiro Michimori

Yoshinari Nishimura

Tomohiro Yoshitsuru

Masashi Fukuda

Hidenori Taki

Yuki Ogawa

Tomohiro Suzuki

Daisuke Morikawa

Youji Kawamoto

An arc detection system includes a first obtainment unit, a second obtainment unit, and a determination unit. The first obtainment unit obtains a measurement result of current flowing in a power line to which power is supplied from a power supply or a measurement result of voltage in the power line. The second obtainment unit obtains quality information about the quality of communication with a device connected to the power line through power line communication with the device via the power line. The determination unit determines whether or not an arc fault has occurred in the power line based on components in a specific frequency band of the measurement result obtained by the first obtainment unit and the quality information obtained by the second obtainment unit.

Arc detection system, arc detection method, and recording medium

Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 3 cmor larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.

n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method

An arc detection system includes a first obtainment unit, a second obtainment unit, and a determination unit. The first obtainment unit obtains a measurement result of current flowing in a power line to which power is supplied from a power supply or a measurement result of voltage in the power line. The second obtainment unit obtains operation information about operation of a device connected to the power line. The determination unit determines whether or not an arc fault has occurred in the power line based on the measurement result obtained by the first obtainment unit and the operation information obtained by the second obtainment unit.

Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 2 cmor larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.

N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method

A light-source device includes an excitation light source; an optical element having a reflecting surface to reflect first colored light emitted from the excitation light source; and a wavelength conversion unit including a waveform conversion member configured to convert at least a portion of the first colored light reflected by the optical element and incident on the wavelength conversion unit, into second colored light having a wavelength different from a wavelength of the first colored light and emit the second colored light. A point P does not intersect with a light flux Q where the point P is a center of the first colored light on the reflecting surface of the optical element and the light flux Q is a light flux of the first colored light emitted from the wavelength conversion unit.

Light source device and image projection apparatus including a rod integrator and light guide

An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

Semiconductor device and method for manufacturing semiconductor device

A light source device comprising: a light source section which generates any one of blue light, red light, and green light; a phosphor which generates a fluorescence including the two colors other than the color of the light emitted from the light source section; a color-changing section which changes one of the two colors of the fluorescence emitted from the phosphor to another color regularly and irradiates it to the image-forming element; and a light path-switching section which switches a light path in which a fluorescence excited by the color light emitted from the light source section passes towards the color-changing section and a light path in which the color light emitted from the light source section passes towards the image-forming element regularly.

Light source device and projector including a phosphor and a color-changing section

A light source optical system includes a wavelength conversion unit configured to receive first color light emitted from by an excitation light source and emit second color light with a wavelength different from a wavelength of the first color light; and a first optical system and a second optical system provided in an optical path between the excitation light source and the wavelength conversion unit. The first optical system includes one optical element having a negative power,

Light source optical system, light source device, and image projection apparatus

A power conversion device according to one embodiment includes a plurality of submodules connected in series to each other. In each submodule, a first terminal, a second terminal and a third terminal are provided on or provided to protrude from a surface of a package. A first semiconductor switching element is built into the package and connected between the first terminal and the second terminal. A second semiconductor switching element is built into the package and connected between the second terminal and the third terminal. A DC capacitor is built into the package and connected between the first terminal and the third terminal.

Power conversion device

A power conversion device includes a plurality of cascaded converter cells. In each of the converter cells, each of a plurality of arms forming a bridge circuit is provided with a plurality of semiconductor switching elements in parallel. A drive controller of each of the converter cells is configured to, when none of a plurality of predetermined abnormality modes is detected, control the bridge circuit in accordance with an externally provided command. The drive controller is configured to, when at least one of the plurality of abnormality modes is detected, turn on all semiconductor switching elements provided in at least one of the plurality of arms forming the bridge circuit, to thereby establish a short circuit between first and second input/output nodes.

A system includes: an illumination device; and an imaging device configured to capture an image of a target which is irradiated with light by the illumination device. The illumination device includes: a light emitting unit configured to emit first polarized light; a condensing unit configured to focus light emitted from the light emitting unit; a diffusion unit configured to diffuse the light focused by the condensing unit; and a uniformization optical system configured to receive the light diffused by the diffusion unit, uniformize an illuminance distribution of the light, and emit the light. The system further including a selective transmission unit provided on an optical path from the target to an imaging element of the imaging device and configured to block the first polarized light at a predetermined blocking ratio.

System for capturing an image

Light source device that emits a plurality of color lights including a fluorescent light, and projector using the same

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Tokyo, Japan

Tatsuya Takahashi