Seiko Epson Corporation

Japan Science and Technology Agency

Other

Jsr Corporation

Japan Advanced Institute of Science and Technology

Toyota Jidosha Kabushiki Kaisha

Mitsubishi Materials Corporation

Toshiba Kikai Kabushiki Kaisha

Sumitomo Seika Chemicals Co., Ltd.

Tatsuya Shimoda

Yasuo Matsuki

Masahiro Furusawa

Takeshi Kijima

Ichio Yudasaka

Takashi Masuda

Jinwang Li

Hideki Tanaka

Satoshi Inoue

Yasuaki Hamada

Tsutomu Miyamoto

Takaaki Miyasako

Toshihiko Kaneda

Tadaoki Mitani

Eisuke Tokumitsu

Zhongrong Shen

Mitsutoshi Miyasaka

Jeremy H Burroughes

Kazuhiko Amano

Eiji Natori

Takao Nishikawa

Nobuyuki Soyama

Hitoshi Fukushima

Takeo Kaneko

Hisashi Aruga

Mitsunori Kokubo

Tomoko Koyama

Hiroshi Takiguchi

Akio Konishi

Nobutaka Fujimoto

Kiyoshi Nishioka

Atsushi Takakuwa

Shingo Ohta

Toshiaki Watanabe

Yuki Sugiura

Tomoki Kawakita

Shuichi Karashima

Yuzuru Takamura

Shinichiro Kobayashi

Masami Hashimoto

Toshiya Saito

Taishi Takenobu

Yoshihiro Iwasa

Richard James Bushby

Ryo Kawajiri

Kevin Critchley

Hisato Yamaguchi

Stephan Evans

Jp Jeyadevan

Yuki Tagashira

Reijiro Shimura

Nishioka Kiyoshi

An oxide all-solid-state battery excellent in lithium ion conductivity and joint strength between an anode active material layer and solid electrolyte layer thereof. In the oxide all-solid-state battery, the solid electrolyte layer is a layer mainly containing a garnet-type oxide solid electrolyte sintered body represented by the following formula (1): (Li, E, H)LMO; a solid electrolyte interface layer is disposed between the anode active material layer and the solid electrolyte layer; the solid electrolyte interface layer contains at least a Si element and an O element; and a laminate containing at least the anode active material layer, the solid electrolyte interface layer and the solid electrolyte layer has peaks at positions where 2&#x3b8;=32.3&#xb0;&#xb1;0.5&#xb0;, 37.6&#xb0;&#xb1;0.5&#xb0;, 43.8&#xb0;&#xb1;0.5&#xb0;, and 57.7&#xb0;&#xb1;0.5&#xb0; in a XRD spectrum obtained by XRD measurement using CuK&#x3b1; irradiation.

Oxide all-solid-state battery

The present invention comprises: a step of applying a liquid composition for forming a PZT ferroelectric film; a step of drying the film applied with the liquid composition; a step of irradiating UV rays onto the dried film at a temperature of 150 to 200&#xb0; C. in an oxygen-containing atmosphere; and after the application step, the drying step, and the UV irradiation step once, or more times, a step of firing for crystallizing a precursor film of the UV-irradiated ferroelectric film by raising a temperature with a rate of 0.5&#xb0; C./second or higher in an oxygen-containing atmosphere or by raising a temperature with a rate of 0.2&#xb0; C./second or higher in a non-oxygen containing atmosphere, followed by keeping the temperature at 400 to 500&#xb0; C. An amount of liquid composition is set such that thickness of the ferroelectric film be 150 nm or more for each application and ozone is supplied during UV irradiation.

Method for forming PZT ferroelectric film

A transfer system () for transferring a fine transfer pattern (M) formed in a mold (M) to a to-be-molded material (D) provided on a substrate (W) includes a positioning device () configured to position the substrate (W) relative to the mold (M) and to bond the mold (M) and the substrate (W) together after the positioning, and a transfer device () provided separately from the positioning device () and configured to receive the mold (M) and the substrate (W) positioned and bonded together by the positioning device (), and to cure the to-be-molded material (D) while pressing the mold (M) and the substrate (W) thereby to perform transfer.

Transferring system and transferring method

The present invention is directed to a method for forming a crystalline cobalt silicide film, comprising the steps of:

Method for forming crystalline cobalt silicide film

The present invention is directed to a method for forming a patterned conductive film, which comprises the step of bringing a substrate having a layer made of platinum microcrystal particles formed thereon in a pattern and a complex of an amine compound and an aluminum hydride into contact with each other at a temperature of 50 to 120&#xb0; C. According to the present invention, there is provided a method for forming a patterned conductive layer, which can ensure electrical bonding with a substrate and also can be suitably applied to various electronic devices, simply without requiring a massive and heavy apparatus.

Method for forming patterned conductive film

A method of producing a functional device according to the present invention includes, in this order: the functional solid material precursor layer formation step of applying a functional liquid material onto a base material to form a precursor layer of a functional solid material; the drying step of heating the precursor layer to a first temperature in a range from 80&#xb0; C. to 250&#xb0; C. to preliminarily decrease fluidity of the precursor layer; the imprinting step of imprinting the precursor layer that is heated to a second temperature in a range from 80&#xb0; C. to 300&#xb0; C. to form an imprinted structure on the precursor layer; and the functional solid material layer formation step of heat treating the precursor layer at a third temperature higher than the second temperature to transform the precursor layer into a functional solid material layer.

Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head

The present invention provides a precursor composition for forming a conductive oxide film having high conductivity and a stable amorphous structure maintained even after heated at high temperature by a simple liquid phase process. The precursor composition of the present invention contains at least one selected from the group consisting of carboxylates, nitrates and sulfates of lanthanoids (but, except for cerium); at least one selected from the group consisting of carboxylates, nitrosyl carboxylates, nitrosyl nitrates and nitrosyl sulfates of ruthenium, iridium or rhodium; and a solvent containing at least one selected from the group consisting of carboxylic acids, alcohols and ketones.

Precursor composition and method for forming amorphous conductive oxide film

A photoelectric conversion device includes a plurality of photoelectric conversion regions disposed over a substrate, and a colored region disposed among the photoelectric conversion regions over the substrate, the colored region forming an image over the substrate.

Method of manufacturing photoelectric conversion device, and method of manufacturing image display

Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric ink jet head

A method of forming a conductive film, comprising the steps of:

Method of forming a conductive film

Photoelectric conversion device, image display, method of manufacturing photoelectric conversion device, and method of manufacturing image display

A composition containing a high order silane compound and a solvent, wherein the solvent contains a cyclic hydrocarbon which has one or two double bonds and no alkyl group, is composed of only carbon and hydrogen and has a refractive index of 1.40 to 1.51, a specific permittivity of not more than 3.0 and a molecular weight of not more than 180. Method of manufacturing a film-coated substrate using the high order silane composition.

High order silane composition and method of manufacturing a film-coated substrate

A method for manufacturing an organic thin film element that includes an organic thin film between a pair of thin film electrodes and at least one electrode being a transparent electrode includes forming a transparent electrode by spraying a material liquid containing a transparent electrode formation material on a base material, and forming an organic thin film on the transparent electrode. This method allows for the manufacture of the organic thin film element by which an organic thin film element with high light-extraction efficiency is simply provided. A method for manufacturing an electro-optic device and a method for manufacturing electronic equipment that utilize the method for manufacturing an organic thin film element are described.

Method for manufacturing microlens and method for manufacturing organic electroluminescence element

A polarization transfer device includes a ferroelectric thin film formed continuously as one piece; a plurality of polarization switches formed by placing the ferroelectric thin film between a first gate electrode and a second gate electrode; and a plurality of polarization accumulators formed by placing the ferroelectric thin film between a first electrode plate and a second electrode plate, wherein the plurality of polarization switches and the plurality of polarization accumulators are arranged alternately.

Polarization transfer device and control method therefor

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Nomi, Japan

Tatsuya Shimoda