Seiko Epson Corporation

Sumitomo Seika Chemicals Co., Ltd.

Japan Science and Technology Agency

Other

Cambridge Display Technology Limited

3M Innovative Properties Company

Hitachi High-Tech Science Corporation

Fujifilm Corporation

Imperial Chemical Industries Limited

Mitsubishi Materials Corporation

Jsr Corporation

Diesel Kiki Co., Ltd.

Kabushiki Kaisha Suwa Seikosha

University of Glasgow

Kelk Ltd.

Tatsuya Shimoda

Satoru Miyashita

Satoshi Inoue

Hiroshi Kiguchi

Osamu Yokoyama

Satoshi Nebashi

Takao Nishikawa

Koji Akioka

Wakao Miyazawa

Sadao Kanbe

Osamu Kobayashi

Ichio Yudasaka

Kiyoshi Nishioka

Masaya Ishida

Takeo Kaneko

Masahiro Furusawa

Kazumasa Hasegawa

Nobutaka Fujimoto

Toshiyuki Ishibashi

Shunichi Seki

Eiji Natori

Hitoshi Fukushima

Satoshi Shimokawato

Takaaki Miyasako

Ryuichi Ozaki

Takeshi Seto

Jeremy H Burroughes

Yasuo Matsuki

Tomoko Koyama

Norio Ito

Koichi Oguchi

Kazuhiro Fukada

Hiromu Miyazawa

Takeo Kawase

Katsuyuki Morii

Yasumasa Takeuchi

Toshiaki Mikoshiba

Masahiro Suzuki

Shoji Hoshina

Shuichi Karashima

Masaaki Ichikawa

Takayuki Kondo

Mutsumi Kimura

Kazuhiko Amano

Hideyuki Kawai

Hisashi Aruga

Mamoru Sugimoto

Anto Yasaka

Akihito Uetake

Takahiro Usui

Masaru Iwasawa

Masao Ono

Satoshi Yamazaki

Hiroshi Kamakura

Kenichi Endo

Tomoki Kawakita

Hiroshi Kasahara

Jinwang Li

Akira Aoyama

Eisuke Tokumitsu

Yoji Tsukamoto

Tsugio Nakamura

Hywel Morgan

Tue Trong Phan

Atsushi Tanaka

Hidekazu Kobayashi

Masayuki Suzuki

Hiroshi Ito

Setsuya Iwashita

Yasunori Taga

Toshiaki Yamagami

Sumio Utsunomiya

Tatsuaki Funamoto

Hiroyuki Hara

Mitsuro Atobe

Makoto Okeya

Taku Aoyama

Kenichi Umeda

Shizuo Tokito

Tsugio Ide

Koji Noda

Yasuaki Yokoyama

Yoshihiro Koyama

Noriyuki Kamijo

Hiroaki Nomura

Nobukazu Takagi

Fumihiko Ishikawa

Hiromasa Higasa

Taketomi Kamikawa

Michio Kobayashi

Toshihiko Kaneda

Atsushi Sato

Masuo Tsuji

Yuji Fujimori

Yoshihiro Okamoto

Hirokazu Tsukada

Masaru Kojima

Barry McGregor

Michio Yanagisawa

Mikio Koyano

A method for manufacturing a thermoelectric conversion element includes forming a thermoelectric film containing a thermoelectric material on a surface of a substrate, pressing the thermoelectric film with a mold to form a pattern of the thermoelectric film on the surface of the substrate, and heating the pattern of the thermoelectric film formed on the surface of the substrate to generate the thermoelectric conversion element.

Method for manufacturing thermoelectric conversion element and thermoelectric conversion element

The etching maskfor screen printing according to one embodiment of the present invention includes aliphatic polycarbonate. Further, the method of producing an oxide layer (the channel) according to one embodiment of the present invention includes: an etching-mask forming step of forming a pattern of the etching maskincluding aliphatic polycarbonate; a contact step of, after the etching-mask forming step, contacting the oxide layer with a solution for dissolving a portion of the oxide layer (the channel) which is not protected by the etching mask; and a heating step of, after the contact step, heating the oxide layer (the channel) and the etching maskto or above a temperature at which the etching maskis decomposed.

Method of producing etching mask, etching mask precursor, and oxide layer, and method of manufacturing thin film transistor

A thin film transistoraccording to the invention includes a gate electrode, a channel, and a gate insulating layerprovided between the gate electrodeand the channeland made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channelis made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

Method for manufacturing thin film transistor with oxide semiconductor channel

A laminate by using a paste or solution containing aliphatic polycarbonates having an etching mask function is provided. A method of producing a laminate of the present invention includes a pattern forming step of forming a patternof a first oxide precursor layer in which a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates on an oxide layeror on the second oxide precursor layer to be oxidized into the oxide layeran etching step of, after the pattern forming step, etching the oxide layeror the second oxide precursor layer that is not protected by the patternand a heating step of, after the etching step, heating the oxide layeror the second oxide precursor layer, and the first oxide precursor layer to a temperature at which the binder is decomposed or higher.

Laminate, etching mask, method of producing laminate, method of producing etching mask, and method of producing thin film transistor

It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment.

Semiconductor device, method for producing same and aliphatic polycarbonate

[Problem] Provided is a composite member which can contribute to simple formation and/or increased quality of fine wiring. [Solution] A composite memberaccording to one embodiment of the present invention includes a base material, an aliphatic polycarbonate-containing layer with multiple island-shaped portions arranged on the base material, and a metal ink, wherein at least a surface of the aliphatic polycarbonate-containing layer with multiple island-shaped portions has a contact angle of 50&#xb0; or more between pure water and the surface when exposed to ultraviolet light including a wavelength of 180 nm or more and 370 nm or less for 15 minutes, and the metal ink is arranged on the base material at at least a portion of a region sandwiched by the precursor layers.

Composite member and method of manufacturing the same, and aliphatic polycarbonate-containing layer

Provided is a tip capable of repeatedly regenerating a single-atom termination structure in which a distal end is formed of only one atom. A tip () having a single-atom termination structure includes: a thin line member () made of a first metal material; a protruding portion () made of a second metal material, which is formed at least in a distal end portion () of the thin line member (), and has a distal end terminated with only one atom; and a supply portion () made of the second metal material to be supplied to the protruding portion (), which is formed in the vicinity of the distal end portion () of the thin line member ().

Ion source and electron source having single-atom termination structure, tip having single-atom termination structure, gas field ion source, focused ion beam apparatus, electron source, electron microscope, mask repair apparatus, and method of manufacturing tip having single-atom termination structure

There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric. An oxide layerincludes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a &#x3b2;-BiNbO-type crystal structure. The oxide layerhas a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layerin a temperature range of 25&#xb0; C. or more and 120&#xb0; C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layerin the temperature range.

Oxide dielectric and method for manufacturing same, and solid state electronic device and method for manufacturing same

An aliphatic polycarbonate, an oxide precursor, and an oxide layer are provided, which are capable of controlling stringiness, when a thin film that can be employed for an electronic device or a semiconductor element is formed by a printing method. In an oxide precursor of the present invention, a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates, and an aliphatic polycarbonate having a molecular weight of 6000 or more and 400000 or less constitutes 80% by mass or more of all the aliphatic polycarbonates.

Oxide precursor, oxide layer, semiconductor element, and electronic device, and method of producing oxide layer and method of producing semiconductor element

Intermediate semiconductor device having an aliphatic polycarbonate layer

It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment. An exemplary method for producing a thin film transistor according to the invention includes an aliphatic polycarbonate layer forming step of forming an aliphatic polycarbonate layerthat covers a gate electrode layerdisposed above a semiconductor layerwith a gate insulatorbeing interposed between the gate electrode layerand the semiconductor layer, and also covers the semiconductor layer, and has a dopant causing the semiconductor layerto become an n-type or p-type semiconductor layer, and a heating step of heating at a temperature causing introduction of the dopant into the semiconductor layerand decomposition of the aliphatic polycarbonate layer

Semiconductor device having a decomposed aliphatic polycarbonate layer

According to the present invention, a method of producing a functional device includes the imprinting step and the functional solid material layer formation step. In the imprinting step, a functional solid material precursor layer obtained from a functional solid material precursor solution as a start material is imprinted so that a first temperature of a heat source for supplying heat to the functional solid material precursor layer is higher than a second temperature of the functional solid material precursor layer in at least part of a time period while a mold for forming an imprinted structure is pressed against the functional solid material precursor layer. In the functional solid material layer formation step, after the imprinting step, the functional solid material precursor layer is heat treated at a third temperature higher than the first temperature in an atmosphere containing oxygen to form a functional solid material layer from the functional solid material precursor layer.

Method for producing functional device and apparatus for producing functional device

The invention provides a dielectric layer having high relative permittivity with low leakage current and excellent flatness. A dielectric layeraccording to the invention is made of multilayer oxide including a first oxide layermade of oxide consisting of bismuth (Bi) and niobium (Nb) or oxide consisting of bismuth (Bi), zinc (Zn), and niobium (Nb) (possibly including inevitable impurities) and a second oxide layermade of oxide of one type (possibly including inevitable impurities) selected from the group of oxide consisting of lanthanum (La) and tantalum (Ta), oxide consisting of lanthanum (La) and zirconium (Zr), and oxide consisting of strontium (Sr) and tantalum (Ta).

Dielectric layer and manufacturing method of dielectric layer, and solid-state electronic device and manufacturing method of solid-state electronic device

The invention provides an oxide semiconductor layer that has less cracks and is excellent in electrical property and stability, as well as a semiconductor element and an electronic device each including the oxide semiconductor layer. The invention provides an exemplary method of producing an oxide semiconductor layer, and the method includes the precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of aliphatic polycarbonate, and the annealing step of heating the precursor layer at a first temperature achieving decomposition of 90 wt % or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature (denoted by X) that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA).

Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device

Growing community of inventors

Suwa, Japan

Tatsuya Shimoda