Hitachi Chemical Company, Ltd.

Tatsuya Sakuta

Kouji Komorida

Rie Katou

Shinya Katou

Takayuki Matsuzaki

Michio Mashino

Kouhei Taniguchi

Ryoji Furutani

Kouji Suzumura

Yukihiro Iwanaga

Takahiro Tokuyasu

Tomohito Yuasa

An embodiment of the present invention relates to an expansion method comprising: a step (I) of preparing a laminate having a semiconductor wafer in which modified sections have been formed along intended cutting lines, a die bonding film and a dicing tape, a step (IIA) of expanding the dicing tape with the laminate in a cooled state, a step (IIB) of loosening the expanded dicing tape, and a step (IIC) of expanding the dicing tape with the laminate in a cooled state, dividing the semiconductor wafer and the die bonding film into chips along the intended cutting lines, and widening the spaces between the chips.

Expansion method, method for manufacturing semiconductor device, and semiconductor device

Flap in an adhesive tape for semiconductor manufacturing

In a wafer processing tape, circular or tongue-shaped notched parts facing the center of an adhesive layer, as seen in a plan view, are formed so as to correspond to a pasting region to a wafer ring to a depth that reaches a release substrate from the side of a base material film. Due to the formation of the notched parts, when a peeling force acts on the wafer processing tape, portions of a tacky material layer and the base material film which are more outward than the notched parts are peeled off first, and a portion that is more inward than the notched parts remains on the wafer ring in a protruding state. Accordingly, a peeling strength between the wafer processing tape and the wafer ring can be increased and the wafer processing tape can be suppressed from being peeled off from the wafer ring during processes.

Tape for processing wafer, method for manufacturing tape for processing

Tape for processing wafer, method for manufacturing tape for processing wafer, and method for manufacturing semiconductor device

In a wafer processing tape, circular or tongue-shaped notched parts facing the center of an adhesive layer, as seen in a plan view, are formed so as to correspond to a pasting region to a wafer ring to a depth that reaches a release base material from the side of a base material film. Due to the formation of the notched parts, when a peeling force acts on the wafer processing tape, portions of a tacky material layer and the base material film which are more outward than the notched parts are peeled off first, and a portion that is more inward than the notched parts remains on the wafer ring in a protruding state. Accordingly, a peeling strength between the wafer processing tape and the wafer ring can be increased. Methods of manufacturing the tape and a semiconductor device are also provided.

Wafer processing tape, method of manufacturing wafer processing tape, and method of manufacturing semiconductor device

A method for manufacturing an adhesive sheet according to the present invention is a method for manufacturing an adhesive sheet including a long peeling base materialand an adhesive layerprovided on the peeling base materialin the form of an island, the method including a peeling step of, after laminating a long adhesive layeron the peeling base material, peeling off an unnecessary portionof the adhesive layerso that a predetermined portion of the adhesive layer is left on the peeling base materialin the form of an island, wherein, in the peeling step, the width W of a narrow portion, which is the narrowest in width in a short direction of the unnecessary portionof the adhesive layer, is adjusted so that the breaking strength in the narrow portionis 200 g or more.

Adhesive sheet and method for manufacturing adhesive sheets

A dicing/die bonding integral film of the present invention includes a base film, a pressure-sensitive adhesive layer which is formed on the base film and to which a wafer ring for blade dicing is bonded, and a bonding layer formed on the adhesive layer and having a central portion to which a semiconductor wafer to be diced is bonded, wherein a planar shape of the bonding layer is circular, an area of the bonding layer is greater than an area of the semiconductor wafer and smaller than an area of each of the base film and the adhesive layer, and a diameter of the bonding layer is greater than a diameter of the semiconductor wafer and less than an inner diameter of the wafer ring, and a difference in diameter between the bonding layer and the semiconductor wafer is greater than 20 mm and less than 35 mm.

Dicing/die bonding integral film, dicing/die bonding integral film manufacturing method, and semiconductor chip manufacturing method

Adhesive tape for semiconductor manufacturing

Growing community of inventors

Ichihara, Japan

Tatsuya Sakuta