Hitachi, Ltd.

Tatsuya Saitoh

Hiroyuki Itoh

Keiichirou Nakanishi

Hiroki Yamashita

Tohru Kobayashi

Minoru Yamada

Kazumichi Yamamoto

Tsuneyo Chiba

Hirotaka Nishizawa

Takeshi Kato

Toshio Yamada

Noboru Masuda

Satoru Isomura

Moritoshi Yasunaga

Atsumi Kawata

Katsunari Shibata

Keiichiro Nakanishi

Rieko Ishida

In signal transmission lines among logic circuits employed in a semiconductor integrated circuit device, a voltage driver circuit is provided with such a wiring whose length is short, and the function of the signal receiving circuit is achieved by a logic circuit capable of responding to a voltage appearing at a terminal of the wiring. On the other hand, a source terminal of such a wiring whose length is long and whose resistance is high, is voltage-driven by the voltage driver circuit in response to the output voltage of the logic circuit. A current sense circuit is provided with a terminal of this long length wiring, which senses a current flowing through this long length wiring to be converted into a voltage. Both an output resistance of the voltage driver circuit and an input resistance of the current sense circuit are made lower than a DC resistance of this long length wiring.

Integrated circuit device having different signal transfer circuits for

A semiconductor integrated circuit device includes a plurality of integrated circuit chips and a large-sized integrated circuit element on which the plurality of integrated circuit chips are mounted. The large-sized integrated circuit element includes a logic circuit for electrically interconnecting the integrated circuit chips mounted on it. The logic circuit provided within the large-sized integrated circuit element includes a control circuit for controlling a connection relation between the integrated circuit chips mounted on the large-sized integrated circuit element. Further, the logic circuit includes buffer or latch circuits for relaying signals transmitted between the integrated circuit chips.

Semiconductor integrated circuit device and computer system using the

An electronic device includes an integrated circuit device, the integrated circuit device comprises a first substrate including an integrated electronic semiconductor circuit and a second substrate including a cooling accelerator for accelerating a heat energy exchange between the integrated electronic semiconductor circuit and a cooling fluid, and the second substrate is joined fixedly with the first substrate through a covalent bond formed between the first substrate and the second substrate.

Integrated circuit substrate with cooling accelerator substrate

A power source wiring supplies power to individual electronic circuits constituting an electronic circuit device. Load circuits are connected to the power source wiring within the range of an arrival time of a voltage noise occurring in the power source wiring in a time of about a half of a pulse width of a noise current at the time of the operation of the electronic circuit. Each of these load circuits includes a series circuit of a resistance and a capacitance.

Electronic circuit device having a series connection of resistor and

This invention discloses an integrated circuit device including an integrated circuit chip having logic circuits formed therein and a wiring substrate for mounting thereon the integrated circuit chip. The wiring substrate has signal wirings for connecting mutually input terminals and output terminals of the integrated circuit chip. The integrated circuit device includes signal wirings for effecting connections of the input terminals and output terminals of the same integrated circuit chip inside the wiring substrate. The logic circuits inside the same integrated circuit chip are mutually connected by signal wirings formed inside the integrated circuit chip when a wiring length is small, and are mutually connected by signal wirings formed inside the wiring substrate when the wiring length is great.

Integrated circuit device having an ic chip mounted on the wiring

A MIS capacitor to be implemented in a semiconductor device employing various or predetermined circuits, has a dielectric side electrode which is in contact with a buried layer provided on a semiconductor substrate through a dielectric film and a buried layer-side electrode connected to the buried layer. The buried layer-side electrode of the MIS capacitor is connected to a low-impedance side of the circuit employed therewith. This structure, when connected as such, is capable of reducing the influence of noise attributed to an .alpha.-ray and thereby operating the circuit stably. The semiconductor device using a MIS capacitor invention is adaptable to an emitter follower circuit and various logic circuits for preventing malfunction resulting from .alpha.-ray radiation.

Semiconductor device using MIS capacitor

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Kokubunji, Japan

Tatsuya Saitoh