Hitachi, Ltd.

Canon Kabushiki Kaisha

Olympus Optical Company, Ltd.

Olympus Corporation

Other

Kabushiki Kaisha Toshiba

Renesas Technology Corp.

Elpida Memory, Inc.

Stanley Electric Co., Ltd

Tokyo University of Science Foundation

Nec Corporation

Renesas Electronics Corporation

Nec Electronics Corporation

The University of Tokyo

Sharp Nec Display Solutions, Ltd.

Tatsuya Saito

Toru Den

Takeshi Kato

Nobuhiro Yasui

Hiroki Yamashita

Jun Okitsu

Tohru Den

Tadakatsu Nakajima

Aya Imada

Masayoshi Yagyu

Yoko Shiga

Tatsuya Iwasaki

Yoshihiro Kondo

Yoji Nishio

Yutaka Uematsu

Takeshi Wada

Keita Suzuki

Hideki Osaka

Kunihide Kaji

Kenji Ogiro

Takahiro Yajima

Shinji Hatta

Takashige Baba

Tohru Nojiri

Masakazu Yamamoto

Yoshio Miki

Ryoko Horie

Takashi Takemoto

Yuichi Morizane

Yohei Nukaga

Yuka Ishii

Toshiyuki Takara

Takeshi Takigawa

Shinichi Hayashi

Tatsuro Uchida

Tsutomu Okada

Takahiro Sato

Hitoshi Matsushima

Kazuhiko Fukutani

Katsuya Tanaka

Yasuo Toko

Hideshi Maeno

Hiroyuki Itoh

Takashi Nakamura

Norio Chujo

Noboru Masuda

Tamaki Kobayashi

Shigeru Ichihara

Takayuki Sumida

Yusuke Yokobayashi

Eiichi Suzuki

Satoru Isomura

Naoki Yamada

Hidehiro Toyoda

Tetsuya Uemura

Yukitoshi Hirose

Shunichi Saito

Akio Idei

Kaname Yamasaki

Junji Yamamoto

Kenji Hibino

Koji Kambara

Hiroaki Shikano

Hiroki Shirato

Shigeyasu Tsubaki

Hiroyuki Toyoda

Hidenori Takagi

Iwao Suzuki

Yasuhiro Tonda

Kiyotaka Matsuno

Junichi Yamada

Masayoshi Mase

Hidetoshi Ozoe

Tomoo Hayashi

Yusuke Takeuchi

Hideaki Uemura

Yuki Kuroda

Kenichiro Sanagi

Ryotaro Kamikawai

Tomonori Sasaki

Shigeo Oomae

Tsuneyo Chiba

Satoru Nishiwaki

Yoshinobu Nakamura

Koichi Hosomi

Tetsuyuki Kono

Takeshi Bingo

Yoshikazu Munemoto

Keiichi Horie

Shinichiro Watanabe

Tatsuo Ioku

Tetsuya Umemura

Takeshi Ueki

Tomohisa Iwanaga

Toshitaka Hanzawa

Taiju Takahashi

Shigeaki Ogura

Akitoshi Ishizaka

A vapor deposition mask includes a silicon substrate including a first region that has a first thickness and that includes a part in which a plurality of through-holes is arranged, and a second region that is arranged at an outer circumference of the first region and that has a second thickness that is greater than the first thickness. The silicon substrate has an inner wall that constitutes a step between the first region and the second region. An outer edge of the inner wall has a curve portion in a plan view, and the inner wall has a plurality of steps in a cross-section view.

Vapor deposition mask and method of manufacturing device using vapor deposition mask

Provided is a polymerizable compound represented by a Formula E-1 or Formula E-2 shown in the description. In Formula E-1 or Formula E-2, Rrepresents an alkoxy group, —NR, a hydroxy group, an aryl group, or an alkyl group, wherein Reach independently represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms; n represents an integer from 1 to 5; Rrepresents a hydrogen atom, an acetyl group, a phenoxyacetyl group, a pivaloyl group, a benzyl group, a 4-methoxybenzyl group, a benzoyl group, a triphenylmethyl group, a 4,4′-dimethoxytrityl (DMTr) group, a 4-methoxytrityl (MMTr) group, a 9-phenylxanthenyl group, a trimethylsilyl group, a cyanomethoxymethyl group, a 2-(cyanoethoxy)ethyl group, or a cyanoethoxymethyl group; and X represents a structure represented by any one of Formula B-1 to Formula B-5 shown in the description.

Polymerizable compound, compound, and method for producing boranophosphate oligomer

A detector that detects or oscillates an electromagnetic wave, the detector including a plurality of antennas having a rectifying element, wherein the plurality of arranged antennas at least include: a first antenna having a first resonant frequency; and a second antenna having a second resonant frequency that differs from the first resonant frequency.

Detector and image forming apparatus

A manufacturing method for a semiconductor apparatus sequentially includes bonding a first chip and a second chip together using an adhesive. The first chip includes a first electrode and has a protrusion, and the second chip has a recess. In the bonding, the first chip and the second chip are bonded together in such a manner that the protrusion is positioned into the recess. Further, the method includes forming a through hole in the second chip to expose the first electrode, the first surface being opposite to a second surface having the recess, and forming the second electrode which is electrically connected to the first electrode, in the through hole.

Manufacturing method for semiconductor apparatus and semiconductor apparatus

Provided a polymerizable compound represented by the following Formula A-1 or Formula A-2: In Formula A-1 or Formula A-2, Rrepresents an electron-donating group; n represents an integer from 1 to 5; Rrepresents a hydrogen atom, a halogen atom, or &#x2014;OR, wherein Rrepresents a hydrogen atom, an alkyl group, or a protecting group of a hydroxy group; Rrepresents a hydrogen atom or a protecting group of a hydroxy group; and X represents a structure represented by any one of Formula B-1 to Formula B-5.

An image display device has an image display unit including a display for displaying images and a backlight arranged behind the display to illuminate the display. The image display device includes an opening formed behind the image display unit, an optical sensor which detects light passing through the opening, and a sensor holder which holds the optical sensor, and the opening includes a protruding diaphragm and a passage hole.

Image display device and manufacturing method thereof enabling easy installation of optical sensor

A semiconductor apparatus comprising a first substrate that has a first surface and a second surface and is provided with a through hole extending through from the first surface to the second surface and an insulating layer and a conductive member that are provided in the through hole is provided. The through hole includes a first opening formed in the first substrate and a second opening provided between the first opening and the second surface. The first opening and the second opening each have a tapered shape whose opening width decreases from the first surface to the second surface, and a first taper angle formed by a side surface of the first opening and a plane parallel to the second surface is smaller than a second taper angle formed by a side surface of the second opening and a plane parallel to the second surface.

Semiconductor apparatus and method of manufacturing the same

To overcome a problem of increase of test time related to BIST in a conventional semiconductor device, a semiconductor device according to one embodiment includes a plurality of memory arrays having different sizes, a test pattern generation circuit that outputs a test pattern for the memory arrays, and a memory interface circuit that is provided for every memory array and converts an access address. The memory interface circuit shifts a test address output from the test pattern generation circuit in accordance with a shift amount set for every memory array, thereby converting the test address to an actual address of a memory array to be tested.

Semiconductor device, memory test method for semiconductor device, and test pattern generation program

Pieces of working information on workloads, positions of the workloads, pieces of environmental information on cooling facilities, and positions of the cooling facilities are stored as arrangement information. The pieces of working information on the workloads are estimated, and allocation of tentative workloads is deduced for fear the pieces of working information may exceed the performances of a group of information processing devices. Tentative power consumptions and arrangement information resulting from the allocation of the tentative workloads, and tentative power consumptions and arrangement information necessary for the allocation of the tentative workloads are calculated. Tentative cooling powers required to control the cooling facilities are calculated. Allocation of the tentative workloads minimizing the sum total of the tentative power consumptions of the information processing devices and the tentative cooling powers of the cooling facilities is searched. Based on the searched allocation, the workloads are allocated to the information processing devices.

Information processing system, and its power-saving control method and device

A method for preparing a bismuth iodide article includes heat-treating bismuth iodide at a temperature less than the melting point of bismuth iodide in an atmosphere containing iodine.

Method for preparing bismuth iodide article and method for manufacturing radiation detecting element

Total power consumption of information-processing devices and power supply/cooling facilities is reduced to realize energy saving operation of information-processing system. The information-processing system includes information-processing devices, power supply facilities, cooling facilities and an operations management device. The operations management device is connected to the devices and the facilities and includes layout information constituted of locations and operating information of the devices and locations and environmental information of the facilities. Also, the operations management device obtains the power consumption of the devices, the power supply loss of the power supply facilities and the cooling power of the cooling facilities by using the layout information, and then allocates the workloads to the devices so as to reduce the total sum of power consumption, supply loss and cooling power.

Operations management methods and devices thereof in systems

Provided is a radiation detector, including: a two-dimensional light receiving element including a plurality of pixels; and a scintillator layer having multiple scintillator crystals two-dimensionally arranged on a light receiving surface of the two-dimensional light receiving element, in which: the scintillator crystal includes two crystal phases, which are a first crystal phase including a material including a plurality of columnar crystals extending in a direction perpendicular to the light receiving surface of the two-dimensional light receiving element and having a refractive index n, and a second crystal phase including a material existing between the plurality of columnar crystals and having a refractive index n; and a material having a refractive index nis placed between adjacent scintillator crystals, the refractive index nsatisfying a relationship of one of n&#x2266;n&#x2266;nand n&#x2266;n&#x2266;n.

Radiation detector

An information processing system which determines an allowable temperature of intake air to an information processing apparatus based on information of a temperature of intake air to the information processing apparatus, information of a temperature of exhaust air of the information processing apparatus, information of a power consumption of the information processing apparatus, and information of an allowable temperature of exhaust air of the information processing apparatus to thereby save power of the information processing system.

Information processing system, operation management method of information processing system, and data center

Provided is a radiation detecting element, including: a semiconductor layer including a tin oxide crystal; and a detecting unit configured to detect, as an electrical signal, charges generated in the semiconductor layer when the semiconductor layer is irradiated with radiation, in which a resistivity of the semiconductor layer is 10&#x3a9;&#xb7;cm or more.

Radiation detecting element using oxide crystal and method of manufacturing oxide crystal

Operations management methods and devices thereof in information-processing systems

Growing community of inventors

Tokyo, Japan

Tatsuya Saito