Sharp Kabushiki Kaisha Corporation

Sumitomo Electric Industries, Limited

Tatsuya Ryowa

Hajime Saito

Takeshi Kamikawa

Kensaku Motoki

Makoto Izumi

Yoshitaka Tomomura

Masaya Ishida

Kazunori Annen

Junichi Kinomoto

Yukiko Morishita

Masato Ohno

Disclosed is a wavelength conversion member that is provided with: a light transmissive member including a light input plane into which excitation light is inputted, and a light output plane from which wavelength converted light is outputted; and a semiconductor fine particle phosphor, which is dispersed in the light transmissive member, and which absorbs the excitation light, converts the wavelength, and emits light. The dispersion concentration of the semiconductor fine particle phosphor in the direction parallel to the light traveling direction, i.e., the direction connecting the light input plane and the light output plane, is lower than the dispersion concentration of the semiconductor fine particle phosphor in the direction orthogonal to the light traveling direction.

Wavelength conversion member, light emitting device and image display device, and method for manufacturing wavelength conversion member

A fluorescent material-sealed sheet includes a plurality of fluorescent sections, an upper sealing section, and a lower sealing section, the plurality of fluorescent sections being sealed by the upper sealing section and the lower sealing section.

Light source, light-emitting device, light source for backlight, display device, and method for producing light source

A semiconductor phosphor nanoparticle including nanoparticle core made of a group 13-group 15 semiconductor; a shell layer coating the semiconductor nanoparticle core; and a metal-containing modified organic compound and a modified organic compound binding to a surface of the shell layer is disclosed.

Semiconductor phosphor nanoparticle

Provided are a group 13 nitride phosphor having high luminous intensity and excellent reliability obtained by preparing group 13 nitride crystallites homogeneously dispersible in a solid matrix by capping surface defects and homogeneously dispersing the group 13 nitride crystallites in the solid matrix and an efficient method of preparing the same. The present invention relates to a group 13 nitride phosphor consisting of group 13 nitride crystallites having a group 13 element dispersed in a matrix of a silica gel solid layer, with a diamine compound bonded to the surfaces of the group 13 nitride crystallites and the silica gel solid layer, and a method of preparing the same.

Group 13 nitride phosphor and method of preparing the same

Provided is a nanocrystalline phosphor having a core/shell structure formed by a core of a group 13 nitride semiconductor and a shell layer, covering the core, including a shell film of a group 13 nitride mixed crystal semiconductor. This nanocrystalline phosphor has high luminous efficiency, and is excellent in reliability. Also provided is a coated nanocrystalline phosphor prepared by bonding modified organic molecules to the nanocrystalline phosphor and/or coating the nanocrystalline phosphor with the modified organic molecules. This coated nanocrystalline phosphor has high dispersibility. Further provided is a method of preparing a coated nanocrystalline phosphor by heating a mixed solution containing a core of a group 13 nitride semiconductor, a nitrogen-containing compound, a group 13 element-containing compound and modified organic molecules.

Nanocrystalline phosphor and coated nanocrystalline phosphor as well as method of preparing coated nanocrystalline phosphor

To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire () is bonded to an electrode () formed on the top surface of a semiconductor layered structure is located off the area right above a dislocation (crystal defect)-concentrated region (X) of the substrate. Concentration of dislocations in the substrate spreads to the layered structure, producing a dislocation-concentrated region in the part of the layered structure located right above the dislocation-concentrated region of the substrate. If a wire is bonded above this region, the pressure applied when the wire is bonded causes the metal of which the electrode is made to diffuse along the concentrated dislocations, lowering the quality of the layered structure and thus resulting in deterioration of the element. Bonding a wire elsewhere than above the dislocation-concentrated region (X) helps prevent such deterioration.

Growing community of inventors

Osaka, Japan

Tatsuya Ryowa