Canon Kabushiki Kaisha

Tatsuya Ryoki

Toru Koizumi

Takanori Yamashita

Masanori Ogura

Kazuhiro Saito

Yoshikazu Yamazaki

Masanobu Ohmura

Masahiro Kobayashi

Seiichirou Sakai

Tetsuya Itano

Daisuke Kobayashi

Hiroaki Kobayashi

Hirofumi Totsuka

Shin Kikuchi

Sho Suzuki

Hideaki Ishino

Tatsuya Suzuki

Hiroki Hiyama

Masaki Sato

Tetsunobu Kochi

Hideaki Takada

Yukihiro Kuroda

Kohichi Nakamura

Takanori Suzuki

Hiroaki Kameyama

Yu Arishima

Satoshi Kato

Kazuki Ohshitanai

Yasuo Yamazaki

Yasuhiro Oguro

Naoki Isoda

Taro Muraki

A radiation detection apparatus according to the present invention includes: a direct-detection-type radiation detector provided in plurality and configured to be arranged in a planar manner; and a semiconductor integrated circuit configured to perform a control operation of the radiation detector or processing on a signal from the radiation detector, wherein the semiconductor integrated circuit is disposed on a back side of the light-receiving surface so as to be included within an area of the radiation detector in a plan view viewed from a side of a light-receiving surface of the radiation detector.

Radiation detection apparatus

A radiation detector obtained by arranging a plurality of pixels on a semiconductor substrate configured to convert incident radiation into charges is provided. The plurality of pixels comprise a plurality of first pixels, and a plurality of second pixels arranged along an outer edge of the semiconductor substrate. Each of the plurality of second pixels has output sensitivity higher than output sensitivity of each of the plurality of first pixels. An interval between adjacent second pixels among the plurality of second pixels is smaller than an interval between adjacent first pixels among the plurality of first pixels.

Radiation detector and radiation CT apparatus

A radiation detector comprising a radiation sensor obtained by arranging first electrodes on a semiconductor substrate configured to convert incident radiation into charges, an integrated circuit, and an interposer is provided. The interposer comprises first terminals arranged on a first surface facing the sensor and connected to the first electrodes, and second terminals arranged on a second surface facing the integrated circuit and connected to the integrated circuit. Each of the first terminals is connected to one second terminal. The number of the second terminals is smaller than the first terminals. The substrate comprises a third surface on which the first electrodes are arranged and a fourth surface on which second electrodes are arranged. The detector further comprises a selector configured to select the second electrode from the second electrodes to supply a potential for converting the incident radiation into charges.

Radiation detector, radiation detection system, and radiation CT apparatus

A photoelectric conversion apparatus includes a first substrate including a pixel array including a plurality of pixels, and a second substrate disposed in a multilayer structure on the first substrate. The photoelectric conversion apparatus further includes a machine learning unit configured to execute processing using machine learning on a signal output from the pixel array, and a signal output unit configured to output a signal corresponding to temperature. Both the machine learning unit and the signal output unit are disposed on the second substrate.

Photoelectric conversion apparatus, photoelectric conversion system, and semiconductor substrate

Since a failure related to an output from a sensor is not detected from an image signal and a failure of the sensor is not detected from an output from the sensor in a system including the sensor for abnormality detection, it is not possible to perform the abnormality detection and to indicate the abnormality to the outside of the system. An apparatus includes a pixel area including multiple pixels, multiple sensors, a processing unit that compares signals based on outputs from the multiple sensors with each other, an output unit that outputs information based on a result of comparison.

Apparatus, system, and movable body

A photoelectric conversion apparatus includes a second substrate including a signal processing circuit configured to perform signal processing using machine learning on a signal output from the first substrate. The second substrate is disposed on the first substrate in a multilayer structure. The signal processing circuit is so disposed to overlap with a pixel array but not overlap with a light-shielded pixel area as seen in a plan view.

Photoelectric conversion apparatus, photoelectric conversion system, and mobile body

A semiconductor device in which a first chip and a second chip are stacked including a first wiring line and a second wiring line by which the first chip and the second chip are electrically connected. The first wiring line and the second wiring line each include a bonding portion for bonding one of a plurality of conductive patterns placed in the first chip and one of a plurality of conductive patterns placed in the second chip. The number of bonding portions included in the first wiring line is larger than the number of bonding portions included in the second wiring line.

Semiconductor device and method of manufacturing semiconductor device

There is provide a photoelectric conversion device. In a first mode, a control unit performs control such that a signal output from each of a plurality of pixels is held in a corresponding holding unit. In a second mode, the control unit performs control of outputting a signal from the holding unit corresponding to a pixel in a first column and control of holding a signal based on a pixel in the first column in the holding unit corresponding to a pixel in a second column in parallel in the same period.

Photoelectric conversion device and method of controlling photoelectric conversion device

A photoelectric conversion apparatus having a first substrate and a second substrate overlaid on each other and including electrically conductive portions is provided. The first substrate includes a photoelectric conversion element, a first portion configured to form part of a first surface, a second portion which is included in an electrically conductive pattern closest to the first portion, and a third portion which is included in an electrically conductive pattern second closest to the first portion. The second substrate includes a fourth portion configured to form part of a second surface, and a circuit. In a planar view with respect to the first surface, an area of the first portion is smaller than an area of the second portion and larger than an area of a portion of the third portion overlaying the second portion.

Photoelectric conversion apparatus and camera

A photoelectric conversion apparatus includes a waveform shaping circuit, a reference circuit, and a counter. The waveform shaping circuit is configured to generate a first pulse signal based on a signal output from an avalanche diode. The reference circuit is configured to generate a second pulse signal without depending on incident light. The counter is connected to the waveform shaping circuit and the reference circuit to count a number of occurrences of a pulse signal. The pulse signal is based on at least one of the first pulse signal and the second pulse signal, and is input to the counter.

Photoelectric conversion apparatus, photoelectric conversion system, moving body, and testing method of photoelectric conversion apparatus

A driving apparatus is provided. The driving apparatus comprises a plurality of driving circuits configured to generate a current according to an inputted voltage. The plurality of driving circuits are formed on a single semiconductor chip, and each of the plurality of driving circuits comprises a plurality of output circuits configured to supply the current to a plurality of load elements arranged in at least one load element array.

Driving apparatus and printing apparatus

A driving apparatus comprising a driving circuit is provided. The driving circuit includes an output terminal to which the load element is connected, a current output circuit configured to supply a current to the load element, a voltage supply circuit configured to apply a voltage to the load element, a first signal line configured to control a timing at which the current output circuit starts supplying a current to the load element and a second signal line configured to control a timing at which the voltage supply circuit is turned off. The voltage supply circuit starts applying a voltage before the current output circuit supplies a current to the load element, and a timing at which the current output circuit starts supplying a current differs from a timing at which the voltage supply circuit turns off application of a voltage.

An imaging device includes a first pixel electrode, a second pixel electrode adjacent to the first pixel electrode, and a photoelectric conversion film continuously covering the first pixel electrode and the second pixel electrode, in which an insulating film is provided between the first pixel electrode and the photoelectric conversion film, and between the second pixel electrode and the photoelectric conversion film, and an intermediate electrode is provided in a position between the first pixel electrode and the second pixel electrode, the intermediate electrode being in contact with a surface of the photoelectric conversion film, the surface being on a side where the first and second pixel electrodes are arranged.

Imaging device including photoelectric conversion film for continuously covering electrodes having a distance between a counter electrode and a pixel electrode or an intermediate electrode is smaller than a distance between the counter electrode and an insulating member

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Kawasaki, Japan

Tatsuya Ryoki