Tokyo Electron Limited

Tatsuya Ogi

Hiroaki Mochizuki

Shigeru Ishizawa

Wataru Ozawa

Kimihiro Fukasawa

Kazuhiro Kanaya

Kentaro Joma

Hiroshi Koizumi

Eiki Endo

A method performed by a semiconductor manufacturing apparatus includes calculating, by a processor of the semiconductor manufacturing apparatus, 3 standard deviations of process condition measurements obtained at a predetermined interval from log information of processing of substrates that have been correctly processed, calculating at least one of an upper limit and a lower limit for anomaly detection based on the calculated 3 standard deviations, and detecting an anomaly in the processing of the substrates based on the at least one of the upper limit and the lower limit.

Anomaly detection method and semiconductor manufacturing apparatus

Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. As a result, the non-uniformity in the plasma processing between the substrates caused by the change of processing atmosphere is suppressed.

Plasma processing apparatus, plasma processing method, and storage medium

There is provided a substrate transfer method capable of preventing fine particles from adhering to a wafer. A substrate processing systemincludes process modulestoeach having therein an inner space S; a transfer module, having an inner space S, connected to the process modulesto; and opening/closing gate valveseach partitioning the inner space Sand the inner space S. The transfer moduleincludes in the inner space Sa transfer arm devicefor holding a wafer W and for loading/unloading the wafer W into/from the process modulesto. The transfer arm deviceholds the wafer W at a retreated position deviated from a facing position facing the gate valveduring an opening motion of the gate valve

Substrate transfer method and storage medium

A method for replacing plural substrates to be processed by a substrate processing apparatus which includes a substrate processing chamber, a load lock chamber, and a conveying apparatus including first and second conveying members for conveying the plural substrates into and out from the substrate processing chamber and the load lock chamber. The method includes the steps of a) conveying a first substrate out from the substrate processing chamber with the first conveying member, b) conveying a second substrate into the substrate processing chamber with the second conveying member, c) conveying the second substrate out from the load lock chamber with the second conveying member, and d) conveying the first substrate into the load lock chamber with the first conveying member. The steps c) and d) are performed between step a) and step b).

Substrate replacing method and substrate processing apparatus

In a substrate processing apparatus according to the present invention, wafer transfer timing with which wafers are to be transferred to individual processing chambers from a cassette container is determined in correspondence to each processing chamber, based upon the lengths of time required to process a single wafer in the processing chambers. Then, wafers are transferred from the cassette container in conformance to the transfer timing thus determined. By setting the wafer transfer timing with which wafers are transferred from the cassette container in coordination with the lengths of processing time at the individual processing chambers, the operation rates in the processing chambers are improved and ultimately, the throughput of the apparatus is improved.

Substrate processing apparatus and substrate transfer method adopted in substrate processing apparatus

A substrate transfer method for use in a substrate processing apparatus including a first processing unit that performs a first process on a substrate, a second processing unit performing a second process on the substrate, and a substrate transfer mechanism that transfers the substrate between the first and the second processing unit, includes: detecting misalignment of the substrate when the substrate is unloaded from the first processing unit; and correcting the misalignment of the substrate based on a detected result. Further, the substrate transfer method includes loading the misalignment-corrected substrate to a targeted position in the second processing unit.

Substrate transfer method, control program, and storage medium storing same

In a system and method for scheduling the movement of wafers in a wafer-processing tool, the wafer-processing tool can include a load module, a wafer-transfer unit, a process module, and a scheduler. The scheduler can be configured to generate a schedule for the movement of wafers in the wafer-processing tool based on the duration of the operations to be performed by the wafer-transfer unit and the process module in processing the wafers.

System and method for scheduling the movement of wafers in a wafer-processing tool

To a common transfer chamber 102 of a treatment system 100, a treatment chamber 104a of an etching system 104, treatment chambers 106a and 108a of first and second CVD systems 106 and 108, a cooling chamber (a post-treatment chamber) 110a of a cooling system 110, and first and second cassette chambers 112 and 114 are connected. In the common transfer chamber 102, a transport arm 118 and a positioning system 120 are arranged. When the treatment system 100 is restarted after being stopped during a treatment, wafers W are sequentially recovered into a cassette 116 on the basis of the control of an operation storage device, which stores therein the origin data and destination data of the wafers W. At this time, the wafers W heated to a very high temperature by a thin film deposition treatment are sequentially recovered into a cassette 116 after being cooled (post-treated), and other wafers W are sequentially recovered directly into the cassette 116. Thus, there is provided a method for recovering an object to be treated, into a cassette in a desired state when a treatment system is restarted after being stopped during a treatment.

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Yamanashi, Japan

Tatsuya Ogi