Kokusai Electric Corporation

Tatsuya Nishino

Tsuyoshi Takeda

Tomoshi Taniyama

Takashi Yahata

Daisuke Hara

Akinori Tanaka

Akira Horii

There is provided a technique that includes: a process chamber in which a substrate is processed; a plurality of first electrodes; a plurality of second electrodes; a high-frequency power supply configured to supply a high-frequency power; a high-frequency power application plate configured to connect the plurality of first electrodes to the high-frequency power supply; and a grounding plate configured to ground the plurality of second electrodes.

Substrate processing apparatus, plasma generating apparatus, and method of manufacturing semiconductor device

There is provided a technique capable of reducing a corrosion of a furnace opening shutter. According to one aspect thereof, a substrate processing apparatus includes: a process vessel provided with an opening and a first sealing surface around the opening; and a furnace opening shutter provided with a second sealing surface facing the first sealing surface, and capable of closing the opening. The furnace opening shutter includes: a protective cover provided corresponding to an inner surface of the furnace opening shutter, facing the process vessel and greater than the opening; and a lid provided corresponding to an outer surface of the furnace opening shutter and supporting the protective cover. The second sealing surface is configured by an outer peripheral portion of the protective cover and the lid, and a purge gas is supplied to a gap between the first sealing surface and the second sealing surface.

Substrate processing apparatus, furnace opening assembly, substrate processing method, method of manufacturing semiconductor device and non-transitory tangible medium

There is provided a technique that includes: imaging a gas supply hole configured to supply a plasma-converted gas into a process chamber by using an imaging device disposed in the process chamber; detecting a plasma emission intensity based on an image of the imaged gas supply hole; and determining at least one of whether abnormal plasma discharge has occurred and whether plasma flickering has occurred based on the detected plasma emission intensity.

Method of determining plasma abnormality, method of manufacturing semiconductor device, and substrate processing apparatus

According to one aspect of the technique described herein, there is provided a technique including: a reaction tube defining a processing chamber wherein a substrate is processed; an electrode provided at an outer circumferential surface of the reaction tube and configured to generate plasma in the process chamber; an electrode fixing part configured to fix the electrode thereto; a heater provided at an outer circumferential surface of the electrode fixing part and configured to heat an inside of the reaction tube; and a spacer configured to provide a predetermined gap between the electrode and a surface of the electrode fixing part.

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Toyama, Japan

Tatsuya Nishino