Ebara Corporation

Nhk Spring Co., Ltd.

Tatsuya Nishimura

Roberto Masahiro Serikawa

Masahiro Isaka

Hidenao Suzuki

Qingquan Su

Takashi Usui

Mutsumi Saito

Kazutoshi Nagai

Takeshi Yoshioka

Mitsuo Mori

Masayoshi Tanaka

Yoshio Hatada

Yoko Kubota

Oingquan Su

According to one embodiment, a vehicle suspension member includes a body of a vehicle suspension member made of a metal, a first layer provided to cover a surface of the body and a second layer provided to cover at least a portion of a surface of the first layer. The first layer includes an epoxy resin, and the second layer includes an epoxy resin and a fluororesin.

Vehicle suspension member

A stabilizer including: a main body for generating an elastic restoring force; and connecting portions formed on both ends of the main body and respectively connected to left and right suspension devices. Hardness of the connecting portions is lower than that of the main body. A method for manufacturing the stabilizer includes, in order, an entire body heat treatment process for heat treating an entire stabilizer and increasing hardness of the entire stabilizer, and a connecting portion softening process for heating the connecting portions and reducing the hardness of the connecting portions. The method for manufacturing the stabilizer thereby increases hardness of the main body and reduces the hardness of the connecting portions lower than that of the main body.

Stabilizer and method for manufacturing same

A hydrothermal electrolytic apparatus comprises a reaction cell for electrolyzing influent at high temperature and high pressure, wherein an overall surface area of a pair of electrodes located in the reaction cell per 1 mof the volume of the influent is 0.05 mor more. The hydrothermal electrolytic apparatus has two or more tubular reaction cells each having a metal inner wall serving as a cathode, and an anode is provided in each of the reaction cells. A hydrothermal electrolytic process comprises incorporating conductive particles into an influent to substantially increase a surface area of electrodes during hydrothermal electrolysis.

Apparatus and method for hydrothermal electrolysis

An object of the present invention is to provide a process and an apparatus for treating a gas containing reducing substances to efficiently degrade and remove the reducing substances. As a means to achieve this object, the present invention provides a process for treating a gas containing reducing substances by hydrothermal electrolysis, comprising supplying a gas containing reducing substances into a reactor charged with an aqueous medium containing a halide ion under application of a direct current at a temperature of 100&deg; C. or more but the critical temperature of said aqueous medium or less and at a pressure that allows said aqueous medium to be kept in the liquid phase.

Method and apparatus for treatment of gas by hydrothermal electrolysis

An object of the present invention is to provide a process and an apparatus for treating an aqueous medium at low running costs with a decreased electricity required for hydrothermal electrolytic reaction. The present invention proposes a two-step process comprising a first step of performing a conventional hydrothermal reaction or a conventional electrolytic reaction prior to hydrothermal electrolytic reaction to degrade readily degradable substances or ammonia or various electrolytically degradable organics and then a second step of performing hydrothermal electrolytic reaction to degrade the remaining organics, whereby the electricity consumed by hydrothermal electrolytic reaction in the second step can be greatly reduced.

Method and apparatus for treating aqueous medium

A method and apparatus for cooling window foils for extracting electron beams from a scanning type electron beam accelerator, the accelerator includes a primary window foil of double window type and a secondary window foil, the method and the apparatus are characterized by blowing cooling gasses against an electron beam scanning surface from both sides thereof to cool the primary window foil then reversing the flow of the cooling gasses at the center of the primary window foil, and circulating the cooling gasses by sucking the cooling gasses from both sides of the electron beam scanning surface to thereby simultaneously cool the secondary window foil.

Method and apparatus for cooling window foils of electron beam

A method by which irradiation treatment of an exhaust gas with electron beams can be performed in a more space- and energy efficient manner. The method in which an exhaust gas containing nitrogen oxides (NOx) is irradiated with electron beams so as to form by-products, which are then separated whereas the treated exhaust gas is liberated into air atmosphere, characterized in that electron beams are generated in such a way that they have a pulsed temporal and spatial shape within an electron beam generator, with the pulse frequency and duration being in the respective ranges of 10 Hz-100 kHz and 10.sup.-8 -10.sup.-5 second whereas the non-irradiation region lasts for a time interval of 10.sup.-5 -10.sup.-1 second.

Method of irradiation with electron beams

In a low-energy neutral particle beam generating apparatus having a main discharge chamber, a high-density electron beam generated in an electron beam generating unit is introduced into a main discharge chamber where it is diverged by a positive voltage applied to an anode electrode and a multipolar magnetic field formed by a permanent magnet, a main discharge gas introduced into the main discharge chamber is ionized by collision with the diverged electron beam, thereby generating a uniform plasma in the main discharge chamber, low-energy ions are drawn out from the plasma and electrically neutralized by a perforated electrode having a multiplicity of holes, thereby obtaining a low-energy neutral particle beam of large diameter without the need of using a complicated, large-sized apparatus.

Method of and apparatus for generating low-energy neutral particle beam

A semiconductor wafer etching apparatus is capable of anisotropically etching a large-diameter semiconductor wafer with high accuracy without causing the semiconductor wafer to be charged. First, the apparatus cools the wafer in an atmosphere of a nitrogen or a halogen gas so that the wafer adsorbs and is covered by atoms of the gas. Then, a fast atom beam source of the apparatus generates an electrically neutral fast atom beam of gas atoms or molecules to etch the semiconductor wafer. The etching speed is promoted by an interaction of the adsorbed atoms and the fast atom beam.

Apparatus and method for etching semiconductor wafer

An electron accelerator includes a thermal cathode, heated by infrared rays guided by a quartz rod, for emitting electrons, an accelerating section connected to a high voltage power supply, and a vacuum vessel containing the cathode and the acceleration section. The cathode may be heated by laser beam instead of the infrared rays. The current level of an accelerated electron beam is detected to generate a signal proportional to the detected level. The signal is used to adjust the intensity of the rays heating the cathode to prevent the level of electrons emitted from said cathode from fluctuating.

Growing community of inventors

Kanagawa, Japan

Tatsuya Nishimura