Daihen Corporation

Tatsuya Morii

Masayuki Nakahama

Yuichi Hasegawa

Yuya Ueno

Yohei Kaneyama

A high-frequency power supply apparatus includes the following elements. A first power supply supplies first power to a load by outputting a first voltage whose fundamental frequency is higher than a second voltage output by a second power supply. A period signal generation circuit generates a period signal matching a frequency and a phase of the second voltage. A waveform control circuit generates a modulation signal for performing frequency modulation on a fundamental wave signal of the first voltage, and adjusts an output timing of the modulation signal in accordance with a timing of the period signal. The first power supply generates a first frequency signal by performing frequency modulation on the fundamental wave signal of the first voltage by using the modulation signal. The first power supply performs power amplification on the first frequency signal and outputs, to the load, the first frequency signal as first power.

High-frequency power supply apparatus

A high-frequency power supply apparatus includes the following elements. A first power supply outputs a first high-frequency voltage with a first fundamental frequency. A second power supply outputs a second high-frequency voltage with a second fundamental frequency lower than the first fundamental frequency. A second matching device is connected between the second power supply and the load. The second matching device generates a timing control signal with a frequency lower than the second fundamental frequency. The first power supply generates a modulation signal by applying a start phase and a frequency shift amount to a modulation fundamental wave signal whose frequency is equal to the second fundamental frequency. The start phase is applied to the modulation fundamental wave signal in accordance with an input timing of the timing control signal. The first power supply performs frequency modulation on the first high-frequency voltage by using the modulation signal.

A radio-frequency (RF) power supply apparatus includes a first power supply, a second power supply, and a matching device connected to the first/second power supplies. The first power supply supplies first RF power to a load by outputting first RF voltage with a first fundamental frequency. The second power supply supplies second RF power to the load by outputting second RF voltage with a second fundamental frequency lower than the first fundamental frequency. The matching device generates a clock signal with a frequency higher than the first fundamental frequency and provides the clock signal to the first power supply. The first power supply generates, by using the clock signal, a waveform signal with the same cycle as the second RF voltage. The first power supply performs, by using the clock signal, frequency modulation control on the first RF voltage to be output from the first power supply.

Radio-frequency power supply apparatus

A high frequency power supply alternately outputs a first AC voltage and a second AC voltage to a plasma generator. The amplitudes of the first AC voltage and the second AC voltage are different from each other. An impedance adjustment device is disposed in midway of the transmission line of the first AC voltage and the second AC voltage. When the AC voltage output from the high frequency power supply is switched to a first AC voltage, a microcomputer changes the capacitance of a variable capacitor circuit to a first target value. When the AC voltage output from the high frequency power supply is switched to a second AC voltage, the microcomputer changes the capacitance of the variable capacitor circuit to a second target value.

Impedance adjustment device and impedance adjustment method

An impedance adjustment device includes a variable capacitor unit. A microcomputer changes the capacitance value of the variable capacitor unit by switching on or off PIN diodes included in n capacitor circuits separately. Thus, the impedance on the plasma generator side when viewed from a high frequency power supply is adjusted. When changing the capacitance value of the variable capacitor unit to a target capacitance value, the microcomputer changes the capacitance value to a relay capacitance value different from the target capacitance value. The microcomputer changes the capacitance value to the target capacitance value after the capacitance value is changed to the relay capacitance value.

Impedance adjustment device

An impedance adjustment device includes a variable capacitor unit. A microcomputer changes the capacitance value of the variable capacitor unit by switching PIN diodes included in n capacitor circuits on or off separately. Thus, the impedance on the plasma generator side when viewed from a high frequency power supply is adjusted. When changing the capacitance value of the variable capacitor unit to a target capacitance value, the microcomputer changes the capacitance value. When a predetermined period passes after the change of the capacitance value, the microcomputer changes the capacitance value again.

An impedance matching device is to be provided between a load and a high frequency power supply in which output power is modulated to a high output and a low output alternately. The impedance matching device calculates an impedance or a reflection coefficient of a case where the load side is viewed from an output end of the high frequency power supply. The impedance matching device performs, based on results of the calculations performed in a first period in which the output power is the high output and in a second period in which the output power is the low output, operations for the impedance matching in the subsequent second period and first period respectively. The impedance matching device achieves, based on results of these operations, the impedance matchings in the subsequent first period and second period respectively.

Impedance matching device and impedance matching method

An impedance matching device comprises a variable capacitor including multiple capacitance elements and connected in parallel having capacitors and each having one end connected in series to a high-frequency power source and semiconductor switches and connected to the respective capacitors, and a control unit. The control unit derives a reflection coefficient based on the obtained information concerning an impedance viewed from the high-frequency power source toward the load side, updates the states of the respective semiconductor switches and included in the multiple capacitance elements and with a first cycle in the case where the reflection coefficient is equal to or more than a predetermined value, and updates the states of the respective semiconductor switches and included in the plurality of capacitance elements and with a second cycle longer than the first cycle in the case where the reflection coefficient is less than the predetermined value.

Proposed are techniques for suppressing an increase in a reflected wave power Pr (synonymous with a reflection coefficient) due to IMD. A high-frequency power supply system for providing a high-frequency power to a connected load includes: a bias power supply that outputs a bias power at a first frequency; a source power supply that outputs a source power at a second frequency higher than the first frequency; and a matching unit including an impedance matching circuit that acquires the bias power and the source power, and provides matching between an impedance on the source power supply side and an impedance on the load side. The source power supply supplies the bias power supply with a sinusoidal synchronizing signal including information about an output frequency to be outputted by the bias power supply, and the bias power supply outputs the bias power of a frequency corresponding to the output frequency included in the sinusoidal synchronizing signal. The matching unit performs a process for dividing a forward wave power due to the source power supply for one cycle of the bias power and a reflected wave power toward the source power supply, into a plurality of sections, a process for performing, with respect to each of the plurality of sections, a frequency matching calculation to determine a frequency setting value for each section, and a process for transmitting the frequency setting value for each section to the source power supply. The source power supply, in accordance with the frequency setting values for the plurality of sections transmitted from the matching unit, outputs the bias power in the plurality of section.

High-frequency power supply system

An impedance matching device includes: a variable capacitor in which a plurality of series circuits of capacitors and semiconductor switches are connected in parallel; a calculation unit that calculates an impedance or a reflection coefficient on the load side using information regarding impedance acquired from the outside; and a control unit that determines ON/OFF states to be taken by the semiconductor switches included in the variable capacitor using the impedance or the reflection coefficient calculated by the calculation unit and turns on or off the semiconductor switches based on the determined states. The control unit changes an ON/OFF control timing between one and another of the semiconductor switches.

An impedance matching deviceincludes multiple capacitance elements and a control unit that controls on or off of semiconductor switches. The capacitance elements and respectively include a first capacitance element group and a second capacitance element group. The control unit updates the state of the first semiconductor switch included in the first capacitance element group with a first cycle until a predetermined time period elapses during which the state of the first semiconductor switch included in the first capacitance element group is maintained while the control unit updates the states of the semiconductor switch and respectively included in the first capacitance element group and the second capacitance element group with a second cycle longer than the first cycle after the predetermined time period elapses during which the state of the first semiconductor switch included in the first capacitance element group is maintained.

An impedance matching device includes: a variable capacitor; a calculation unit that calculates a reflection coefficient on the load side; a storage unit that stores the reflection coefficient calculated within a predetermined period so as to be associated with ON/OFF states of the semiconductor switches; a determination unit that determines ON/OFF states to be taken by the semiconductor switches using a calculation result within the predetermined period; a control unit that turns on or off the semiconductor switches based on the determined ON/OFF states; and a counting unit that counts the number of times the determined ON/OFF states have changed. In a case where the counted number of times is larger than a predetermined number of times, the control unit turns on or off the semiconductor switches so as to match ON/OFF states associated with a reflection coefficient closer to, among the stored reflection coefficients, and then prohibits ON/OFF switching.

A drive circuit performs switching between an on-state and an off-state of a PIN diode, the drive circuit being provided with a switching element and a switching element, a drive power supply, and a current limiting resistor that adjusts a forward current of the PIN diode. When the switching element is in an on-state and the switching element is in an off-state, the PIN diode is switched to the on-state by applying a forward voltage to the PIN diode from the drive power supply via the current limiting resistor, and when the switching element is in the off-state and the switching element is in the on-state, the PIN diode is switched to the off-state by applying, not via the current limiting resistor, a reverse voltage to the PIN diode from the drive power supply.

Drive circuit and impedance matching device

An impedance matching device includes: a variable capacitor in which a plurality of first capacitance elements or a plurality of second capacitance elements are connected in parallel; a calculation unit that calculates an impedance or a reflection coefficient on the load side using information regarding the impedance acquired from the outside; and a control unit that determines an ON/OFF state to be taken by each of semiconductor switches included in the variable capacitor using the impedance or the reflection coefficient calculated by the calculation unit and turns on or off the semiconductor switches included in the first or second capacitance element based on the determined state. The control unit cyclically switches semiconductor switches to be turned on or off in a predetermined order.

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Osaka, Japan

Tatsuya Morii