Rohm Co., Ltd.

Tatsuya Miyazaki

Hirotaka Otake

Takukazu Otsuka

Mamoru Tsuruya

Maiko Hatano

Yuta Okawauchi

Yasuo Kanetake

A semiconductor device includes a first and a second switching element, a first and a second conductive member, and a capacitor. The first switching element has a first element obverse surface and a first element reverse surface facing away from each other in a first direction. The second switching element has a second element obverse surface and a second element reverse surface facing away from each other in the first direction. The first and second conductive members are spaced apart in a second direction orthogonal to the first direction. The capacitor has a first and a second connection terminal. The first and second switching elements are connected in series, forming a bridge. The first and second connection terminals are electrically connected to opposite ends of the bridge. The capacitor and the first switching element are on the first conductive member, the second switching element on the second conductive member.

Semiconductor device with switching elements connected in series

A power module (PM) includes: an insulating substrate; a semiconductor device disposed on the insulating substrate, the semiconductor device including electrodes on a front surface side and a back surface side thereof; and a graphite plate having an anisotropic thermal conductivity, the graphite plate of which one end is connected to the front surface side of the semiconductor device and the other end is connected to the insulating substrate, wherein heat of the front surface side of the semiconductor device is transferred to the insulating substrate through the graphite plate. There is provide an inexpensive power module capable of reducing a stress and capable of exhibiting cooling performance not inferior to that of the double-sided cooling structures.

Power module and fabrication method of the same, graphite plate, and power supply equipment

An apparatus includes a control device configured to serve as a principal controlling agent in an electric power conversion device incorporating a switching circuit configured to be a bidirectional inverter. The control device is configured to subtract, from a reference signal that is determined in accordance with an operation mode of the electric power conversion device, a multiplied signal obtained by multiplying a control-target current of the switching circuit by a prescribed coefficient to generate, based on a result of the subtraction, a control signal for controlling the bidirectional inverter.

Control device for controlling an electric power conversion device incorporating a bidirectional inverter

AC power supply deviceincludes input capacitorsandconnected at a neutral point X of a three-phase output, transistor bridges* (where * denotes U, V, and/or W) each consisting of PWM control badgesandeach including two switch elements, transformers T* connected to output terminals of the transistor bridges*, reactors Ls* connected to the transformers T*, smoothing capacitors* connected to the reactors Ls*. The transformers T* are autotransformers including a core* and windings* and* coupled with each other via the core*. One ends of the windings are connected to output terminals of the PWM control bridgesand, respectively, while the other terminals are connected to the reactors Ls*. The windings* and* are wound in such directions that magnetic fluxes generated in the core* are cancelled with each other.

AC power supply device

Power module includes: first transistors Q, Qforming at least one half bridge, and disposed at upper and lower arms thereof; second transistors QM, QMof which drains are respectively connected to gates Gand Gsides of the first transistors, and sources are respectively connected to the sources S, Ssides thereof; source signal wiring patterns SSP, SSPrespectively connected to the sources S, Sof the first transistors; first connected conductors MSW, MSWfor respectively connecting between the source signal wiring patterns and the sources of the second transistors; second gate signal wiring patterns MGP, MGPrespectively connected to gates MG, MGof the second transistors; and second connected conductors MGW, MGWfor respectively connecting between the gate signal wiring patterns and the gates of the second transistors. Lengths of the first connection conductors are respectively equal to or shorter than lengths of the second connection conductors.

Growing community of inventors

Kyoto, Japan

Tatsuya Miyazaki