Nec Electronics Corporation

Renesas Electronics Corporation

Tatsuya Miya

Kazuharu Kimura

Hiroshi Mizutani

Takao Atsumo

Provided is a phase shifter that shifts a phase of an input signal based on switching between a low-pass filter and a high-pass filter, the phase shifter including: a first field-effect transistor that is coupled between an input terminal and an output terminal; a resonance circuit that resonates when the first field-effect transistor is in an on-state; an additional line that is coupled between the resonance circuit and a node that is included in a signal line, which is formed between the input and output terminals when the first field-effect transistor is in the on-state; and an inductor that is included in a part of the signal line and forms a low-pass filter together with at least the additional line, when the first field-effect transistor is in the on-state.

FET phase shifter for selectively phase shifting signals between different filtering characteristics

A bit phase shifter includes a plurality of phase shifters having phase shift amounts and connected in series through connection paths; and a first adjusting circuit provided in the connection path between every adjacent two of the plurality of phase shifters. The first adjusting circuit includes a first inductance which attains impedance matching to each of capacitances provided by the adjacent two phase shifters.

Series connected bit phase shifter having first and second impedance adjusting circuits

A phase shifter includes a first signal path in which a first unit is disposed to advance a phase of a signal; a second signal path in which a second unit with no shunt capacitor is disposed to change the phase of the signal such that the changed phase is delayed than the advanced phase by the first unit; and a switch section configured to switch between the first signal path and said second signal path. The first unit comprises a filter, and the second unit is a transmission line.

Phase shifter having switchable signal paths where one signal path includes no shunt capacitor and inductor

A phase shifter selectively switches between a low-pass filterand a high-pass filterusing single pole double throw switchesandprovided on the input and output sides, respectively, and operatively linked to each other. The single pole double throw switchesandinclude FETs Qand Qthat connect single pole side junctions and the low-pass filter, respectively, and inductance circuits (Land R, and Land R) connected in parallel with FETs Qand Q, respectively. The inductance circuits are respectively comprised of the inductor Land the resistor Rconnected in series and of the inductor Land the resistor Rconnected in series.

Phase shifter having components which suppress fluctuations in the phase shifter pass characteristics

A board for high frequency device includes a plurality of electrode terminals connected to an electronic component or another electronic circuit board by flowable conducting material such as solder, and grooves formed in an electrode terminal of the plurality of electrode terminals and capable of accumulating solder or the like. Specifically, a high frequency component is mounted on the front surface of the high frequency device board, and the plurality of electrode terminals are formed on the rear surface of the high frequency device board. A ground electrode terminal included in the plurality of electrode terminals is formed at the center of the rear surface of the high frequency device board and connected to a ground. The grooves for accumulating solder or the like are formed in the ground electrode terminal. This reduces the possibility of short-circuit between adjacent electrode terminals due to the flowable conducting material such as solder.

Electronic circuit board

A high frequency module used as a unit circuit making up a phased array antenna, in which the module may be reduced in size with reduction in cost. A high frequency moduleincludes a dielectric substratehaving both surfaces metallized. The dielectric substrate has a first metallized layerand a second metallized layerformed on both surfaces and has a low noise amplifier and the phase shifter ICmounted on the metallized layeron one surface. The high frequency modulealso includes a low noise transistorand a distributed constant circuit, formed on the one surface of the dielectric substrateto form the low noise amplifier together, and an input terminal, an output terminaland power supply terminalsA toD formed by leading out the metallized layeron the one surface to the opposite side surface of the dielectric substratein such a manner as to maintain insulation from the metallized layeron the opposite side surface. The high frequency module further includes a metal capprovided for covering at least a circuit component loading surface of the dielectric substrate

Growing community of inventors

Kanagawa, Japan

Tatsuya Miya