Fujitsu Semiconductor Limited

Tatsuya Mise

Tetsuya Takeuchi

Tomiyasu Saito

Hiromichi Ichikawa

Yoshio Matsuzawa

Genshi Okuda

A semiconductor device includes a first electrode layer and a second electrode layer disposed over a substrate, a first insulating layer disposed over the first electrode layer, and a reflective electrode layer disposed on the first insulating layer and electrically connected to the first electrode layer, wherein the second electrode layer is exposed externally, and a thickness of the second electrode layer is greater than a thickness of the reflective electrode layer.

Semiconductor device and method for fabricating semiconductor device

A method of fabricating a semiconductor device includes forming a first insulation film over a semiconductor substrate, the semiconductor substrate including an outer region and an inner region located at an inner side of the outer region, forming a first wiring over the first insulation film in the inner region, forming a second insulation film over the first wiring and over the first insulation film, decreasing a film thickness of the second insulation film in the inner region with regard to a film thickness of the second insulation film in the outer region, and polishing the second insulation film after the decreasing of the film thickness of the second insulation film.

Growing community of inventors

Aizuwakamatsu, Japan

Tatsuya Mise