Toto Ltd.

Tatsuya Koga

Kazuki Anada

Kosuke Yamaguchi

Hiroki Matsui

Ryunosuke Nakagawa

Nobutomo Otsuka

According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer. The base material includes a first surface, a second surface at a side opposite to the first surface, and at least one hole extending through the first and second surfaces. The ceramic layer is a ceramic layer located on the base material. The at least one hole includes a first hole part continuous with the first surface. The ceramic layer includes a first part and a second part. The first part is located on the first surface. The first part is exposed. The second part is located on the first hole part. An arithmetical mean height Sa of a surface of the first part is less than an arithmetical mean height Sa of a surface of the second part.

Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus

According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer. The base material includes a first surface, a second surface, and at least one hole. The at least one hole extends through the first and second surfaces. The ceramic layer is located on the first surface. The at least one hole includes an oblique surface and a perpendicular surface. The oblique surface is continuous with the first surface and is oblique to a first direction from the first surface toward the second surface. The perpendicular surface is positioned between the second surface and the oblique surface in the first direction and extends along the first direction. An angle between the first surface and the oblique surface is greater than an angle between the perpendicular surface and the oblique surface.

An electrostatic chuck includes: a ceramic dielectric substrate having a first major surface, a second major surface, and a through-hole; a metallic base plate which has a gas introduction path that communicates with the through-hole; and a bonding layer which is provided between the ceramic dielectric substrate and the base plate and includes a resin material. The bonding layer has a space which is provided between an opening of the through-hole in the second major surface and the gas introduction path and is larger than the opening in a horizontal direction, and a first area in which an end face of the bonding layer on a side of the space intersects with the second major surface being recessed from the opening further than a second area of the end face which is different from the first area.

Electrostatic chuck

According to an aspect of the invention, there is provided an electrostatic chuck including: a ceramic dielectric substrate having a first major surface, a second major surface, and a through-hole; a metallic base plate which has a gas introduction path that communicates with the through-hole; and a bonding layer which is provided between the ceramic dielectric substrate and the base plate and includes a resin material, the bonding layer having a space which is provided between an opening of the through-hole in the second major surface and the gas introduction path and is larger than the opening in a horizontal direction, and a first area in which an end face of the bonding layer on a side of the space intersects with the second major surface being recessed from the opening further than another second area of the end face which is different from the first area.

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Fukuoka-ken, Japan

Tatsuya Koga