Canon Kabushiki Kaisha

Nikon Corporation

Nikon Vision Co., Ltd.

Kabushiki Kaisha Toshiba

Mitsubishi Electric Corporation

Renesas Electronics Corporation

Daiichi Pharmaceutical Co., Ltd.

Suzuki Sogyo Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Fujifilm Corporation

Toshiba Electronic Devices & Storage Corporation

The Nisshin Oillio Group, Ltd.

Hitachi Industrial Equipment Systems Co., Ltd.

Tatsuya Kobayashi

Naoki Enomoto

Toshiaki Miyashiro

Akihiko Uchiyama

Tetsuya Kobayashi

Haruo Fujii

Yoshiro Saito

Akihiko Takeuchi

Takehiko Suzuki

Yoichiro Maebashi

Chikara Fujita

Masaru Shimura

Kazuhiro Funatani

Koichi Suzuki

Hiroshi Kita

Takashi Kobayashi

Takashi Saito

Hiroshi Sasame

Takaaki Tsuruya

Takashi Shibuya

Motoi Katoh

Seiji Saito

Akira Ito

Takamitsu Soda

Youichirou Maebashi

Hisayoshi Kojima

Kazuo Shimokawa

Yukio Yokoyama

Ayumi Nakajima

Tatsuhiko Hayakawa

Takeo Koyama

Tsuyoshi Yoshida

Eiji Suzuki

Kaoru Seto

Junichi Kato

Katsuhiro Shimizu

Arata Ono

Hiroyuki Asano

Makoto Imamizu

Takao Aoki

Keisuke Matsuda

Masao Umezawa

Soshi Kuroda

Akira Tojo

Motoi Kato

Nobuhiro Imai

Daisuke Murata

Hideki Tada

Satoshi Shimizu

Masahiro Goto

Hideo Yoshida

Kenichi Saito

Yukio Kobayashi

Takashi Mizuochi

Takashi Kawana

Kazuo Kubo

Kazuhisa Kemmochi

Toshifumi Suzuki

Masaaki Yanagisawa

Toshihiko Ochiai

Shinji Hashiguchi

Takashi Ito

Yuki Nishizawa

Takashi Sugihara

Hidekazu Matsuda

Koichi Hiroshima

Hiroaki Kawakami

Shun-ichi Ebihara

Takahiro Inoue

Mitsugu Inomata

Yoshikuni Miyata

Katsuhiko Nishimura

Masayuki Uchida

Yoshiaki Konishi

Takanori Aoki

Masao Nakano

Tatsuya Uemachi

Hiroki Goto

Kazuyuki Ishida

Hidetaka Uehara

Kiyoshi Onohara

Yusuke Jota

Koji Ono

Masao Yoshikawa

Shinkichi Takahashi

Sumito Watanabe

Kiyomi Oonishi

Norinaga Suzuki

Toshifumi Moritani

Takayuki Tajima

Seiya Isozaki

Yasuo Ito

Fumiyoshi Kawashiro

Masashi Binkai

Masahiro Sano

Seiya Takeguchi

Yosuke Ohashi

Keisuke Katsumi

The medical service support device includes a processor and a memory connected to or built into the processor. The processor is configured to acquire low operation rate medical device specification information capable of specifying a low operation rate medical device, which is a medical device of which a standard operation degree falls below a threshold value among a plurality of the medical devices used in an endoscope handling service, and output medical service support information obtained based on the low operation rate medical device specification information.

Medical service support device, medical service support method, and program

According to one embodiment, a semiconductor device includes a semiconductor chip having a first electrode on a first surface, a metal plate, and a first conductive bonding sheet that is disposed between the first surface of the semiconductor chip and the metal plate and bonds the first electrode to the metal plate.

Semiconductor device

Human body detector

An object of the present invention is to provide a powdered fat and/or oil composition, a food containing the powdered fat and/or oil composition, and methods for producing these. Specifically, provided are a fat and/or oil composition containing 65 to 99% by mass of a XXX triglyceride and 35 to 1% by mass of X2Y triglycerides, a powdered fat and/or oil composition obtained from the fat and/or oil composition, a food containing the powdered fat and/or oil composition, and methods for producing these.

Powdered fat/oil composition, food including powdered fat/oil composition, and methods for producing same

A semiconductor device comprising: bonding pads formed in the first wiring layer; and first wirings and a second wiring formed in a second wiring layer provided one layer below the first wiring layer. Here, a power supply potential and a reference potential are to be supplied to each first wiring and the second wiring, respectively. Also, in transparent plan view, each of the first wirings is arranged next to each other, and is arranged at a first position of the second wiring layer, that is overlapped with the bonding region of the first bonding pad. Also, in transparent plan view, the second wiring is arranged at a second position of the second wiring layer, that is overlapped with a first region located between the first bonding pad and the second bonding pad. Further, a width of each first wiring is less than a width of the second wiring.

Semiconductor device including a plurality of bonding pads

A semiconductor device includes a substrate, a device layer, and a film. The substrate includes a first semiconductor element, and has a first surface, a second surface, and a side surface between the first surface and the second surface. The device layer includes a second semiconductor element electrically connected to the first semiconductor element, and is provided on the first surface of the substrate. The film includes a first film including a first region, a second region, and a third region. The substrate is positioned between the first region and the device layer in a first direction. The substrate is positioned between the second region and the third region in a second direction crossing the first direction. The first film fills the unevenness of the second surface and the side surface.

Semiconductor device having a three-sided textured substrate

A semiconductor device includes a base including interconnects, a first semiconductor chip including a first semiconductor element portion, and a second semiconductor chip including a second semiconductor element portion. The second semiconductor chip is electrically connected to the first semiconductor chip via at least one of the interconnects. The second semiconductor chip includes a first region, a first portion, and a second portion. The first region includes the second semiconductor element portion. The first portion is continuous with the first region. The second portion is continuous with the first region and is separated from the first portion in a second direction crossing a first direction. The first direction is from the base toward the first region. The second portion, the first portion, and at least a portion of the first semiconductor chip each is positioned between the base and the first region.

Semiconductor device, method for manufacturing semiconductor device, and method for manufacturing semiconductor package

Binoculars

A dummy-light generating device includes a continuous wave (CW) light source that outputs CW light, a modulated-light generating unit that generates, using the CW light, first intensity-modulated light subjected to intensity modulation and second intensity-modulated light delayed by a half time of a modulation cycle of the first intensity-modulated light with respect to the first intensity-modulated light and having a polarization state e different from a polarization state e of the first intensity-modulated light, and a polarization combiner that performs polarization combination of the first intensity-modulated light and second intensity-modulated light and outputs light after the polarization combination as dummy light.

Dummy-light generating device, optical transmission apparatus, and dummy-light generating method

An object of the present invention is to improve the degree of freedom in the wiring design of a wiring substrate configuring a semiconductor device. Lands having an NSMD structure and a land-on-through-hole structure are arranged at positions not overlapping with a plurality of leads arranged on a chip loading surface of a wiring substrate in transparent plan view on the outer peripheral side of a mounting surface of the wiring substrate configuring a semiconductor device having a BGA package structure. On the other hand, land parts having the NSMD structure and to which lead-out wiring parts are connected are arranged at positions overlapping with the leads arranged on the chip loading surface of the wiring substrate in transparent plan view on the inner side than the group of lands in the mounting surface of the wiring substrate.

A BGAincludes a wiring substrate, a semiconductor chipfixed on the wiring substrate, a sealing bodythat seals the semiconductor chip, and a plurality of solder ballsprovided on a lower surface of the wiring substrate. A degree of flatness of an upper surfaceof a first wiring layerof the wiring substrateof the BGAis lower than a degree of flatness of a lower surface, and a first patternprovided in a second wiring layeris arranged at a position overlapping a first patternprovided in the first wiring layer. Also, an area of the first patternprovided in the first wiring layeris larger than an area of a plurality of (for example, two) second patternsprovided in the second wiring layerin a plan view, and a first opening portionthrough which a part of a second insulating layeris exposed is formed in the first patternprovided in the second wiring layer

a method of fabricating a semiconductor device is described below. The method includes stacking a plurality of semiconductor chips on each of regions in a substrate having a plurality of first grooves extending in a first direction and a plurality of second grooves extending in a second direction intersecting the first direction, the region being defined by the first grooves and the second grooves, providing an encapsulation portion covering a side of the substrate on which the semiconductor chips are stacked, removing a surface portion of the substrate on the opposite side to the side on which the semiconductor chips are stacked to expose the first grooves and the second grooves, and cutting the encapsulation portion along the first grooves and of second grooves. The device and the method can provide higher productivity.

Method of fabricating a semiconductor device and the semiconductor device

An optical transmission method wavelength-multiplexing and transmitting multiple channels including data. The data are composed of data areas independent between the channels and data areas non-independent between the channels. Data patterns of the data areas non-independent between the channels are variable. The data patterns of the data areas non-independent between the channels are set so that in time periods of the non-independent data areas on an optical transmission section, a time period during which polarization states of the multiple channels are correlated in the optical transmission section has a length such that an error rate is less than or equal to a threshold value, the error rate being determined from a temporal distribution of bit errors obtained from a result of error decision after demodulation in an optical receiver.

Optical transmission method and optical transmission system

To provide a semiconductor device having improved reliability. The semiconductor device has a wiring board, bonding land, semiconductor chip mounted on the wiring board via an adhesive layer and having a pad electrode, bonding wire connecting the pad electrode with the bonding land, and sealing body. The sealing body is, in a circuit formation region, in contact with an organic protection film and, in a scribe region and a region between the pad electrode and the scribe region, in contact with a surface protection film while not in contact with the organic protection film. A first side surface is closer to the circuit formation region side than a second one. The adhesive layer covers entirety of the semiconductor chip back surface and the second side surface of the semiconductor chip. The first side surface is in contact with the sealing body without being covered with the adhesive layer.

Semiconductor device and method of manufacturing same

Growing community of inventors

Tokyo, Japan

Tatsuya Kobayashi