Kioxia Corporation

Tatsuya Kishi

Daisuke Watanabe

Toshihiko Nagase

Tadashi Kai

Masahiko Nakayama

Masayoshi Iwayama

A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.

Growing community of inventors

Seongnam-si, South Korea

Tatsuya Kishi