Rohm Co., Ltd.

Tatsuya Kiriyama

Takashi Nakamura

Yuji Okamura

Shingo Ohta

Noriaki Kawamoto

A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Schottky barrier diode and method for making the same

A semiconductor device includes a semiconductor substrate that is made of either of silicon carbide (SiC) and gallium nitride (GaN), and has a defect region containing a crystal defect; a first insulating film that coats the defect region and is arranged on the semiconductor substrate; and a conductor film that electrically connects to a principal surface of the semiconductor substrate, the principal surface being exposed to a region that is not coated with the first insulating film.

Growing community of inventors

Kyoto, Japan

Tatsuya Kiriyama