Mitsubishi Denki Kabushiki Kaisha

Hitachi, Ltd.

Oki Electric Industry Co., Ltd.

Mitsubishi Heavy Industries Limited

Nippon Telegraph and Telephone Corporation

Nippon Telegraph and Telephone Public Corporation

Kabushiki Kaisha Toshiba

Toshiba Toko Meter Systems Co., Ltd.

Tatsuya Kimura

Atsushi Shimizu

Daisuke Suzuki

Mitsuo Usami

Toshio Yamada

Tohru Kobayashi

Masato Hamamoto

Zempei Kawazu

Yasuhiro Shin

Hiromasa Katoh

Noboru Shiozawa

Kaoru Koyu

Kazuyoshi Satoh

Takao Ishida

Norio Hayafuji

Masayoshi Takemi

Hirotaka Kizuki

Hidetaka Kodama

Nariaki Fujii

Akihiro Tanaka

Takashi Nishimura

Eitaro Ishimura

Yusuke Kobayashi

Naoki Ogawa

Yutaka Mihashi

Manabu Kato

Tohru Takiguchi

Hiroshi Nakatani

Takashi Motoda

Noriya Hayashi

Tatsufumi Aoi

Motoharu Miyashita

Shoichi Karakida

Akira Takemoto

Ryuichi Matsuda

Takuji Sonoda

Yasunori Miyazaki

Yoshito Sameda

Kengo Yamaguchi

Yoshihiko Mizushima

Takushi Itagaki

Takuya Iijima

Takashi Higuchi

Tetsuo Shiba

Takahiro Tachibana

Hirofumi Shimizu

Seiji Ochi

Toshikazu Kuroda

Akira Kono

Kaoru Kadoiwa

Takuya Yamazaki

Nobuyoshi Sakai

Yuusuke Asai

Toshihiko Okamoto

Yusuke Yamashina

Mitsuhiro Sakoyama

Fuyuki Kurokawa

Kimitaka Shibata

Akio Ikeda

Takaharu Nakamura

Naoya Uchida

Shuichi Ishii

Kenji Kajiyama

Hiroshi Kanbe

Yoshihiro Kawamata

Tetsuya Maita

Kenichi Niu

Hibiki Saito

Kisuke Matsumoto

Akira Sugimura

Junichi Sakai

Yoshiyuki Otsubo

Hiroaki Nojiri

Kiyonori Nishikawa

Makoto Futoo

Toshikatsu Sakakibara

Motohalu Miyashita

Shinichi Ryochi

An inspection system for a fabricated object formed by layering powder includes an acquisition unit that acquires an image of a surface of each of layers, an identification unit that identifies a defect portion (protruding portion or recessed portion) on the surface of the powder and a position of the defect portion based on the acquired image, and a determination unit that determines that an abnormality occurs when the defect portion successively occurs at a same position in the plurality of layers.

Inspection system, inspection method, and inspection program

A curable composition of the present invention includes a cationic polymerizable compound; a thermal polymerization initiator; and a storage stabilizer, in which the cationic polymerizable compound includes at least two selected from the group consisting of a glycidyl ether compound, an alicyclic epoxy compound, and an oxetane compound, a content of the thermal polymerization initiator is from 0.3 to 3 parts by mass with respect to 100 parts by mass of the cationic polymerizable compound, and chain curing is enabled by thermal energy generated by a polymerization reaction of the cationic polymerizable compound.

Curable composition, curable paste material, curable sheet material, curable modeling material, curing method, and cured product

A storage apparatus includes a controller unit and output unit. The controller receives cyclic information that is cycled within a specific group of storage apparatuses with properties close to a relevant storage apparatus. The cyclic information includes performance information of each storage apparatus in the specific group and evaluation information indicative of an evaluation result of the performance information of each storage apparatus. The controller acquires the performance information including the evaluation results, combines it with the cyclic information, and transmits the cyclic information to a storage apparatus which is a next cycling destination. A similarity level may be calculated based on configuration information and a predetermined weight. A specific group may be formed by checking whether storage apparatuses are capable of communicating with each other, so a cyclic path can be formed. The output unit may transmit performance information as information to be displayed on a user terminal.

Storage apparatus, storage system, and performance evaluation method using cyclic information cycled within a group of storage apparatuses

A plasma generation apparatus, and a plasma thruster configured to use the plasma generation apparatus are disclosed. The plasma generation apparatus includes a discharge vessel, a light-emitting monitor, a probe measuring instrument, a control device, and an optical axis driving unit. The discharge vessel is configured to ionize gas which is introduced to an inside thereof so as to generate plasma. The light-emitting monitor is configured to measure electron density of the plasma by emission spectra of the plasma. The probe measuring instrument is configured to measure the electron density of the plasma by a probe in the discharge vessel.

Plasma generation apparatus including measurement device and plasma thruster

A device including: a conductor through which a current to be measured flows; multiple coils arranged around the conductor; a first magnetic body provided to face one of end surfaces of each of the multiple coils and configured to magnetically short-circuit the multiple coils; and a second magnetic body provided to face another one of the end surfaces of each of the multiple coils, configured to magnetically short-circuit the multiple coils, and including through-holes through which coil wires from the multiple coils are passed, respectively, the through-holes being provided at positions facing the other end surfaces of the multiple coils, respectively.

Current detection device and electricity meter

A rocket nozzle includes a dual-bell nozzle and a gas introducing section configured to introduce gas into space surrounded by the dual-bell nozzle. Combustion gas flows in the space. The dual-bell nozzle includes a first stage nozzle bell-shaped and surrounding an upstream portion of the space, and a second stage nozzle bell-shaped and surrounding a downstream portion of the space. The dual-bell nozzle has an inflection point between the first stage nozzle and the second stage nozzle. The gas introducing section includes a gas inlet provided to an inner wall surface of the first stage nozzle. The gas is introduced into the space from the gas inlet.

Rocket nozzle and control method for combustion gas flow in rocket engine

The invention consists in a capacitative electromagnetic flow meter in which excitation is performed at a frequency above the commercially available frequency and having a characteristic correction filter that corrects the gain frequency characteristic of the exciting current such that the exciting flux waveform has a flat section. In the detection unit, the value of the electrostatic capacitance between the face electrodes A, B and guard electrodes A, B is made smaller than the value of the electrostatic capacitance between the detecting face electrodes A, B and the fluid to be measured. The exciting coils are fixed to a cylindrical yoke, being electrostatically screened by coil fixing plates. Fixing by an earth ring is performed with this cylindrical yoke and the two ends of the measurement tube being symmetrical with respect to the tube axis and electrode axes. In addition, fixing is effected by filling the entire interior of the detection unit with epoxy resin.

Capacitative electromagnetic flow meter

In a method for producing a semiconductor device, a compound semiconductor cap layer including no aluminum is grown on a compound semiconductor layer including aluminum, a mask pattern insulating film is formed on a part of the compound semiconductor cap layer, the compound semiconductor wafer with the insulating mask pattern is immersed in an ammonium sulfide solution, the compound semiconductor wafer is selectively etched away using a chlorine containing gas in a reaction chamber, and a groove formed in the etching process is filled with a compound semiconductor layer grown in the reaction chamber by MOCVD. Therefore, a regrowth interface on which no impurity is segregated is attained, improving the quality of the regrown crystal layer.

Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure

A composite optical device having a high efficiency of coupling a laser diode and an optical device and a method of producing the composite optical device. The composite optical device connects a laser diode with a first mesa including an active layer on a (001) plane of a compound semiconductor substrate via a first cladding layer and an optical device provided with a second mesa including an optical waveguide layer formed on the (001) plane via a second cladding layer, wherein one end of the active layer and one end of the optical waveguide layer oppose each other at a distance smaller than the thicknesses of the first and second cladding layers. At least the second cladding layer is grown in an ambient supplemented with HCl to produce a planar surface.

Composite optical device

A semiconductor laser includes a first conductivity type semiconductor substrate having a gain region and a spot size changing region adjacent each other; a first conductivity type lower cladding layer disposed on the substrate; an active layer disposed on the lower cladding layer and having a thickness which is uniform in the gain region and gradually decreases in the spot size changing region with distance from the gain region; a second conductivity type upper cladding layer disposed on the active layer and having a stripe-shaped ridge, the ridge extending along the gain region and the spot size changing region; a first electrode disposed on the ridge of the upper cladding layer; and a second electrode disposed on a rear surface of the substrate. Current flow is concentrated in the ridge of the upper cladding layer. Further, when the ridge is fabricated, portions of the active layer in which a current will be injected during operation of the laser are not exposed to the atmosphere and not oxidized, resulting in a highly reliable semiconductor laser with an integrated spot size changing part and gain part.

Semiconductor laser and method of fabricating semiconductor laser

An optical semiconductor device includes an n-type InP substrate having top and bottom surfaces; a stripe-shaped mesa structure including an n-type cladding layer, a multi quantum well layer, and a p-type first upper cladding layer disposed on the top surface of the substrate; a first layer of a semi-insulating material, an n-type InP hole blocking layer having a carrier concentration equal to or less than 4.times.10.sup.18 cm.sup.-3 and more than 1.times.10.sup.18 cm.sup.-3, and a second layer of the semi-insulating material disposed burying the mesa structure; a second p-type cladding layer and a p-type contact layer disposed on the mesa structure and on the second layer of the semi-insulating material, and p side electrodes spaced from each other in a stripe direction of the mesa structure, disposed on the p-type contact layer; and an n side electrode disposed on the bottom surface of the substrate. Therefore, an optical semiconductor device is available which has superior element isolation characteristics and broad modulation bandwidth, and enables the individual elements to operate with the utmost performance.

Optical semiconductor device with InP

A light detecting device includes a first conductivity type semiconductor substrate; an insulating semiconductor window layer disposed on the substrate; a concavity in a region of the window layer and penetrating through the window layer; successively disposed in the concavity, a first conductivity type lower cladding layer, a first conductivity type guide layer of a semiconductor material having a band gap energy smaller that the band gap energies of the lower cladding layer and the window layer, an undoped light absorption layer having a band gap energy smaller than that of the first conductivity type guide layer, and a second conductivity type guide layer having a composition approximately identical to that of the first conductivity type guide layer, edges of the first conductivity type guide layer, the light absorption layer, and the second conductivity type guide layer being exposed at a surface of the window layer; and a layer of an insulating material, covering the edges. The interface between the window layer and the lower cladding layer is a regrowth interface and does not contact the absorption layer. The light detecting device has reduced dark current.

Light detecting device

In a method for doping with beryllium, when epitaxially growing a III-V compound semiconductor, (MeCP).sub.2 Be is employed as a dopant source. Since (MeCP).sub.2 Be has a lower vapor pressure than diethylberyllium (DEBe) which is conventionally employed as the dopant source doping control is facilitated. In addition, since (MeCP).sub.2 Be having a higher purity than DEBe is easily obtained, impurities such as oxygen are not incorporated into the active layer during doping, whereby a high quality p type layer is realized.

Method of doping with beryllium and method of fabricating semiconductor

A semiconductor device includes a p type InP substrate with a (001) surface; a mesa structure formed by dry etching, extending along a &lt;110&gt; direction, including semiconductor layers, having (110) side surfaces, and a height H.sub.m ; and mesa burying layers including a p type InP burying layer on the (110) side surfaces and the (001) surface, the p type InP burying layer having a thickness D.sub.p, and an n type InP burying layer on the p type InP burying layer. An angle between a (111)B surface and (001) surface is .theta..sub.111, the growth rates on the (110) side surfaces and on the (001) surface are respectively R.sub.g (110) and R.sub.g (001), an angle .theta. is tan .theta.=R.sub.g (110)/R.sub.g (001) and the critical thickness D.sub.n of the n type InP burying layer on the (001) surface when the n type InP burying layer is not grown on the (111)B surface is ##EQU1## The n type InP burying layer has a thickness D.ltoreq.D.sub.n. The leakage current path width is narrowed and contact of the n type InP burying layer and an uppermost layer of the semiconductor layers is avoided. Consequently, a semiconductor device having reduced leakage current and superior device characteristics is obtained.

Semiconductor laser

A semiconductor laser device includes a semiconductor substrate of a first conductivity type; opposed light emitting facets; a double heterojunction structure disposed on the semiconductor substrate and including an optical waveguide that extends between the facets and comprises a light emitting region and a lens region, the lens region being between the light emitting region and one of the facets, the double heterojunction structure including a plurality of AlGaAs series compound semiconductor layers which are thicker in the light emitting region than in the lens region; and a current blocking structure disposed on both sides of the double heterojunction structure and including a lower AlGaAs series compound semiconductor layer of the first conductivity type, an intermediate AlGaAs series compound semiconductor layer of a second conductivity type, opposite the first conductivity type, and an upper AlGaAs series compound semiconductor layer of the first conductivity type. Therefore, a reactive current that does not contribute to laser oscillation is prevented from flowing through the current blocking structure.

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Tokyo, Japan

Tatsuya Kimura