Sharp Kabushiki Kaisha Corporation

Tatsuya Kawasaki

Hajime Imai

Yoshihito Hara

Tohru Daitoh

Masaki Maeda

Hideki Kitagawa

Yoshiharu Hirata

Teruyuki Ueda

Toshikatsu Itoh

Tetsuo Kikuchi

Masahiko Suzuki

Setsuji Nishimiya

Masamitsu Yamanaka

Yoshimasa Chikama

Hiroshi Aichi

An active matrix substrate includes a plurality of source bus lines, a lower insulating layer covering the source bus lines, a plurality of gate bus lines formed above the lower insulating layer, and an oxide semiconductor TFT disposed to correspond to each pixel area. The oxide semiconductor TFT includes an oxide semiconductor layer disposed on the lower insulating layer, and a gate electrode disposed above the oxide semiconductor layer. The gate electrode is formed in a different layer from the gate bus lines, and is disposed to be separated from another gate electrode disposed in an adjacent pixel area. The gate electrode is covered by an interlayer insulating layer. The gate bus line is disposed on the interlayer insulating layer and in a gate contact hole formed in the interlayer insulating layer, and is connected to the gate electrode in the gate contact hole.

Active matrix substrate

The present invention has an object to reduce the number of necessary masks to reduce manufacturing cost. A method of manufacturing a display device includes: forming electrodes or first lines; forming a first insulating film covering the electrodes or the first lines; forming a second insulating film covering the first insulating film; collectively forming first contact holes through the first insulating film and the second insulating film so as to expose parts of the electrodes or parts of the first lines; planarizing a surface of the second insulating film; and forming a first conductive layer to be connected from the surface of the second insulating film to the exposed parts of the electrodes or the exposed parts of the first lines via the first contact holes.

Method of manufacturing display device and display device

The oxide semiconductor layer is electrically connected to a source electrode or the source bus line within the source opening formed in the lower insulating layer, each wiring line connection section includes a lower conductive portion formed using the first conductive film, the lower insulating layer extending over the lower conductive portion, an oxide connection layer formed using an oxide film the same as the oxide semiconductor layer and electrically connected to the lower conductive portion within the lower opening formed in the lower insulating layer, an insulating layer covering the oxide connection layer, and an upper conductive portion electrically connected to the oxide connection layer within the upper opening formed in the insulating layer, wherein the oxide connection layer includes a region lower in a specific resistance than the channel region of the oxide semiconductor layer.

Active matrix substrate and method for manufacturing same

A display device includes a switching element having a pixel connection portion, a first insulating film having a first pixel contact hole formed therein so as to be in a place overlapping at least a part of the pixel connection portion, a common line, an intermediate electrode composed of the same conducting film as the common line, disposed to overlap the first pixel contact hole, and connected to the pixel connection portion, a common electrode not connected to the intermediate electrode but connected to the common line, a second insulating film having a second pixel contact hole formed therein so as to be in a place overlapping at least a part of the intermediate electrode, and a pixel electrode disposed so that at least a part of the pixel electrode overlaps the second pixel contact hole.

Display device and method for manufacturing display device

An active matrix substrate includes a first TFT and a second TFT, in which the first TFT includes a first oxide semiconductor layer and a first gate electrode arranged on a part of the first oxide semiconductor layer with a first gate insulating layer interposed therebetween, the first gate insulating layer has a layered structure including a first insulating film and a second insulating film arranged on the first insulating film, the second TFT includes a second oxide semiconductor layer having a higher mobility than the first oxide semiconductor layer and a second gate electrode arranged on a part of the second oxide semiconductor layer with a second gate insulating layer interposed therebetween, and the second gate insulating layer includes the second insulating film and does not include the first insulating film, and the second TFT further includes a lower insulating layer including the first insulating film arranged between the second oxide semiconductor layer and a substrate.

An active matrix substrate includes gate bus lines; source bus lines; a lower insulating layer; an oxide semiconductor TFT; and a pixel electrode, in which the oxide semiconductor TFT includes an oxide semiconductor layer disposed on the lower insulating layer, a gate electrode, a source electrode, and a first ohmic conductive portion that is coupled to the oxide semiconductor layer and the source electrode, the lower insulating layer includes a source opening portion exposing at least a portion of the source electrode, the first ohmic conductive portion is disposed on the lower insulating layer and in the source opening portion and is in direct contact with at least the portion of the source electrode in the source opening portion, and the first region of the oxide semiconductor layer is in direct contact with an upper surface of the first ohmic conductive portion.

Active matrix substrate and manufacturing method thereof

An active matrix substrate includes: a substrate; lower bus lines and upper bus lines; a lower insulating layer positioned between the lower bus lines and the upper bus lines; an oxide semiconductor TFT that are disposed in each pixel region and have an oxide semiconductor layer disposed on the lower insulating layer; pixel electrodes disposed in each pixel region; and wiring connection units arranged in a non-display region. Each wiring connection unit includes: a lower conductive layer formed using the same conductive film as the lower bus lines; an insulating layer that extends on the lower conductive layer and includes the lower insulating layer. The lower bus lines and the lower conductive layer have a first laminated structure including a metal layer and a transparent conductive layer that covers an upper surface and a side surface of the metal layer.

An active matrix substrate includes: a source metal layer including a plurality of source bus lines; a lower insulating layer covering the source metal layer; a oxide semiconductor TFT including an oxide semiconductor layer provided on the lower insulating layer; an inter-layer insulating layer covering the oxide semiconductor TFT; a pixel electrode provided on the inter-layer insulating layer; a common electrode including a plurality of sub common electrodes each of which is capable of functioning as a touch sensor electrode; a gate metal layer including a plurality of gate bus lines and a gate electrode; a drain metal layer including the drain electrode; and a plurality of touch sensor lines included in the drain metal layer and each electrically connected to any one of the sub common electrodes.

Active matrix substrate and liquid crystal display device with touch sensor

An active matrix substrate includes TFTs, an interlayer insulating layer, a common electrode, a first dielectric layer, pixel electrodes, a second dielectric layer, and touch wirings, in which each of the pixel electrodes at least partially overlaps the common electrode via the first dielectric layer, so that an auxiliary capacitance including each of the pixel electrodes, the common electrode, and the first dielectric layer is formed, the touch sensor electrodes include a first electrode, the touch wirings include a first wiring and a second wiring in the touch sensor electrodes, the second wiring extends to the other electrode across the first electrode when viewed from a normal direction, and a portion of the second wiring overlaps the first electrode via the first and the second dielectric layers, so that a touch wiring capacitance including the second wiring, the first electrode, the first and the second dielectric layers is formed.

Active matrix substrate, liquid crystal display device with touch sensor using active matrix substrate, and method for manufacturing active matrix substrate

The present invention provides a thin-film transistor array substrate that prevents semiconductor layers of thin-film transistor elements from having step disconnection even when the frame width is reduced. The thin-film transistor array substrate of the present invention includes a thin-film transistor element in a pixel region and a terminal in a terminal region. The thin-film transistor array substrate sequentially includes a support, an insulating layer, a gate electrode, a gate insulating layer, and a semiconductor layer in a cross-sectional view of the pixel region. A region with the insulating layer encompasses a region with the semiconductor layer in a plan view of the pixel region. The thin-film transistor array substrate sequentially includes the support, a lead line extending from the terminal, and the insulating layer in a cross-sectional view of the terminal region.

Thin-film transistor array substrate and display device

An active matrix substrate includes a gate metal layer including a plurality of gate bus lines, and a thin film transistor arranged in each pixel region, wherein: the thin film transistor includes a gate electrode, an oxide semiconductor layer arranged on the gate electrode with a gate insulating layer interposed therebetween, wherein the gate electrode is formed in the gate metal layer and is electrically connected to a corresponding one of the plurality of gate bus lines, the gate metal layer has a layered structure including a copper alloy layer and a copper layer arranged on the copper alloy layer, wherein the copper alloy layer is of a copper alloy including Cu and at least one additive metal element, wherein the additive metal element includes Al, and an Al content of the copper alloy is 2 at % or more and 8 at % or less.

Active matrix substrate having thin film transistors that each include copper gate electrode and oxide semiconductor layer

A display panel includes a substrate, pixel electrodes, switching components, an electrode, a line, a terminal, an insulating film, and a conductive film. The switching components are disposed in a layer lower than the pixel electrodes. The electrode is disposed in a layer different from a layer in which the pixel electrodes are disposed. The line includes sections disposed in a layer lower than the switching components in a display area. The terminal is disposed in a layer upper than the line in a non-display area. The insulating film includes a section disposed between the line and the switching components in the display area and a section disposed between the terminal and the substrate in the non-display area. The conductive film is disposed on the insulating film in a layer between the line and the terminal to connect the line to the terminal.

Display device

A method of manufacturing a display panel substrate includes a transparent conductive film formation step of forming a transparent conductive film on a flattening film that covers a switching component disposed on a substrate, a metallic film formation step of forming a metallic film so as to cover the transparent conductive film after the transparent conductive film formation step, a line formation step of forming a line by etching the metallic film after the metallic film formation step, and a transparent electrode formation step of forming a transparent electrode that is connected to the line by etching the transparent conductive film after the wire formation step.

Growing community of inventors

Sakai, Japan

Tatsuya Kawasaki